Search

While occasionally being able to charge and discharge more quickly than batteries, carbon‐based electrochemical supercapacitors (SCs) are nevertheless limited by their simplicity of processing, adjustable porosity, and lack of electrocatalytic active sites for a range of redox reactions. Even SCs based on the most stable form of carbon (sp3 carbon/diamond) have a poor energy density and inadequate capacitance retention during long charge/discharge cycles, limiting their practical applications. To construct a SC with improved cycling stability/energy density Mn‐ion implanted (high‐dose; 1015–1017 ions cm−2) boron doped diamond (Mn‐BDD) films have been prepared. Mn ion implantation and post‐annealing process results in an in situ graphitization (sp2 phase) and growth of MnO2 phase with roundish granular grains on the BDD film, which is favorable for ion transport. The dual advantage of both sp2 (graphitic phase) and sp3 (diamond phase) carbons with an additional pseudocapacitor (MnO2) component provides a unique and critical function in achieving high‐energy SC performance. The capacitance of Mn‐BDD electrode in a redox active aqueous electrolyte (0.05 M Fe(CN)63‐/4− + 1 M Na2SO4) is as high as 51 mF cm−2 at 10 mV s−1 with exceptional cyclic stability (≈100% capacitance even after 10 000 charge/discharge cycles) placing it among the best‐performing SCs. Furthermore, the ultrahigh capacitance retention (≈80% retention after 88 000 charge/discharge cycles) in a gel electrolyte containing a two‐electrode configuration shows a promising prospect for high‐rate electrochemical capacitive energy storage applications. [ABSTRACT FROM AUTHOR]

Silicon-vacancy (SiV) centers were produced in single crystalline diamond (SCD) and ultrananocrystalline diamond (UNCD) nanostructures via Si ion implantation or in situ Si doping. SiV-embedded UNCD (SiV-UNCD) was fabricated by both top-down and bottom-up methods. The spectral properties of the SiV centers, including the zero phonon line (ZPL) width and decay time, were investigated in the SCD and UNCD nanostructures. All the SiV-UNCD nanostructures showed bright emission regardless of the preparation method. However, the decay time of the SiV centers was affected by the synthesis procedure. A SiV decay time of τ ∼ 0.19 ns was observed for UNCD nanostructures formed by in situ doping, whereas the SiV decay time was ∼0.43 ns for SiV-UNCD clusters prepared by Si ion implantation into UNCD deposited on Ti/sapphire substrates. The ultrasonication of UNCD clusters on Ti/sapphire pyramids produced bright SiV-UNCD nanoclusters with sizes of ∼50 nm, a ZPL width of 13.5 nm, and a decay time of 0.35 ns, suggesting promising potential in bioimaging applications. SiV-containing SCD (type Ia or type IIa) showed enhanced SiV spectral properties with a ZPL width of 6.08 nm and longer decay time of 1.3 ns. [ABSTRACT FROM AUTHOR]

Ion implantation is used to create nanodiamonds (NDs) with embedded magnetic ions for use in a wide range of biological and medical applications; however, the effectiveness of this process depends heavily on separating magnetic NDs from nonmagnetic ones. In this study, we use secondary ion mass spectrometry to verify the implantation of magnetic ions in NDs and the success of separation. When applied to a series of NDs with embedded iron or manganese ions, the sorting tool used in this study proved highly effective in selecting magnetic NDs. Besides, multienergy ion implantation and precise thickness control of NDs coating on the silicon wafer were suggested to improve this technology. [ABSTRACT FROM AUTHOR]

Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ∼ 0.02 with three different B/C doping concentrations of B/C ∼ 2500 ppm, 5000 ppm, 7500 ppm. Atomic force microscopy topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74â€"4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ∼ 7500 ppm) have shown the low resistance value ∼9.29 Ω for CVD diamond/SCD IIa, and the resistance value ∼16.55 Ω for CVD diamond/SCD Ib samples. [ABSTRACT FROM AUTHOR]