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Abstract High-quality superconductor/topological material heterostructures are highly desired for realisation of topological superconductivity and Majorana physics. Here, we demonstrate a method to directly draw nanoscale superconducting β-Sn patterns in the plane of a topological Dirac semimetal (TDS) α-Sn thin film by irradiating a focused ion beam and taking advantage of the heat-driven phase transition of α-Sn into superconducting β-Sn. The β-Sn nanowires embedded in a TDS α-Sn thin film exhibit a large superconducting diode effect (SDE), whose rectification ratio η reaches a maximum of 35% when the magnetic field is applied parallel to the current. The results suggest that the SDE may occur at the α-Sn/β-Sn interfaces where the TDS α-Sn becomes superconducting by a proximity effect. Our work thus provides a universal platform for investigating quantum physics and devices based on topological superconducting circuits of any shape.

Introduction. Soil reinforcement is widely used in the construction of buildings and structures in complex geological conditions, especially with the help of vertical elements. Calculations of reinforced foundations in practice are carried out by various methods, including numerical methods. Many studies were carried out on soil behaviour during pile reinforcement and its effect on settlement, but the interaction between soils and reinforcing elements is not fully understood. The choice of element location and assessment of the influence of soil liquefaction on the reinforcement efficiency under seismic effects remain topical tasks.Materials and methods. The effects of different reinforcing pile arrangements on the behaviour of the soil mass and foundation settlement under seismic loads are studied. Three pile arrangements, including conventional and alternative arrangements are considered using the PLAXIS 2D programme. Different soil models are also used in the calculation — UBC3D-PLM and HS Small for modelling the bottom and top layer of the soil depending on its characteristics.Results. The results show that all three selected design schemes obtain a significant increase in settlement during earthquake passage. The different pile arrangements significantly affect the deformation and settlement of the foundation slab, as well as the location of soil liquefaction points under seismic loads.Conclusions. By changing the parameters of pile reinforcement, it is possible to control the size and location of liquefaction zones and, if necessary, to protect some zones from the realization of this process. The presented results can contribute to the design and development of effective methods of construction in earthquake-prone areas.

Abstract The magnetic proximity effect (MPE) attracts much attention as a promising way for introducing ferromagnetism into a nonmagnetic electron-transport channel. Although the range of MPE is generally limited to the interface, it is extended to several tens of nm in high-quality semiconductor bilayers consisting of a nonmagnetic quantum well (QW) and an underlying ferromagnetic semiconductor (FMS) layer. To elucidate the mechanism of this long-range MPE, it is essential to observe the magnetically proximitized electronic structure of the nonmagnetic semiconductor. Here, by investigating the Shubnikov - de Haas oscillations in nonmagnetic n-type InAs QW / FMS (Ga,Fe)Sb bilayers, we successfully observe the spin-polarized Fermi surface of the InAs QW. The spontaneous spin-splitting energy in the conduction band of the InAs QW reaches 18 meV when applying a negative gate voltage. This large and gate-tunable spin-polarized Fermi surface of a magnetically proximitized InAs QW provides an ideal platform for novel spintronic and topological devices.

Abstract Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (T C) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.

Magnetoresistance, where the electric resistance of a material changes under an applied magnetic field, is typically an even function of the applied magnetic field, due to the combination of time reversal and spatial inversion symmetries. Here, Takiguchi et al show an odd-parity magnetoresistance of remarkable size in edge channels of a semiconductor quantum well.

The interface between perovskite-oxide SrTiO3 and other oxides realizes efficient spin-to-charge current conversion; however, the typically insulating oxides hinder the propagation of spin-currents. Here the authors achieve a record efficiency by replacing an oxide insulator with a strongly-correlated polar metal.

In this manuscript, the authors grow very thin layers of FeAs in a matrix of InAs. The resulting superlattice displays ferromagnetism, with the Curie temperature varying depending on the layer thickness. These results further illustrate the wide array of intriguing ground states of materials with tetrahedral FeAs bonds

Indium-substituted yttrium iron garnet samples, Y3Fe5−xInxO12 (x = 0–0.7, step 0.1), were prepared using a citrate solgel method. Synchrotron X-ray diffraction (SXRD) measurements combined with the Rietveld refinement technique were used to investigate the crystallization, structure parameters and lattice distortion in the samples. Magnetization and Curie temperature of the samples were measured with the SQUID and VSM equipments. The non-magnetic indium ions were found to reside at the octahedral sites, leading to an increase of the total magnetization and a decrease in the Curie temperature. Molecular field coefficients Naa, Ndd and Nad were determined by fitting the experimental thermomagnetization curves in the framework of a two-sublattice ferrimagnetic model. The stiffness constant of the spin waves, D, in these samples was calculated based on the exchange interaction constants, Jij, and its temperature dependence was derived for the sublattice magetizations. The calculated results for D(T) are in good agreement with the experimentally measured data and are significantly large around room temperature.

We study the growth and properties of the quaternary-alloy ferromagnetic semiconductor (In0.94−x,Gax,Fe0.06)Sb (x = 5%–30%; the Fe concentration is fixed at 6%) grown by low-temperature molecular beam epitaxy. Reflection high-energy electron diffraction patterns, scanning transmission electron microscopy lattice images, and x-ray diffraction spectra indicate that the (In0.94−x,Gax,Fe0.06)Sb layers have a zinc blende crystal structure without any other second phase. The lattice constant of the (In0.94−x,Gax,Fe0.06)Sb films changes linearly with the Ga concentration x, indicating that Ga atoms substitute In atoms in the zinc-blende structure. We found that the carrier type of (In0.94−x,Gax,Fe0.06)Sb can be systematically controlled by varying x, being n-type when x ≤ 10% and p-type when x ≥ 20%. Characterization studies using magnetic circular dichroism spectroscopy indicate that the (In0.94−x,Gax,Fe0.06)Sb layers have intrinsic ferromagnetism with relatively high Curie temperatures (TC = 40–120 K). The ability to widely control the fundamental material properties (lattice constant, bandgap, carrier type, and magnetic property) of (In0.94−x,Gax,Fe0.06)Sb demonstrated in this work is essential for spintronic device applications.

In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) monotonically decreases with increasing bias voltage, which limits the bias voltage range for the operation of MTJs. In our study, using double-barrier MTJs composed of Fe/MgO/Fe/γ-Al2O3 grown on a Nb-doped SrTiO3 substrate, we demonstrate unconventional bias dependences of the TMR, in which the TMR ratio increases with increasing bias voltage. We reveal that this behavior originates from the sharp giant resistance peak near zero bias likely induced by the Coulomb blockade effect via Fe impurities in γ-Al2O3, which are diffused from the Fe layer. The observed TMR ratio is 23% at a bias voltage of −4 V at 3.5 K, which is a very high value in this large bias voltage range. Our results offer a novel way to improve the bias voltage dependence of TMR.

To optimize the writing and reading performance of magnetic random-access memory (MRAM) devices, achieving current-induced spin–orbit torque (SOT) magnetization switching in perpendicularly magnetized full Heusler alloys is vitally important. For conventional SOT-metal bilayer systems, heavy metals (HMs) with a large spin Hall angle (θSH) are generally used for generating a spin current, which is injected into the adjacent ferromagnet (FM) layer and exerts a torque on the magnetization to switch it. However, the large resistivity of generally used HMs such as β-Ta and β-W can increase the Ohmic loss. In this article, we achieve full SOT switching in Heusler alloy Co2FeSi using low-resistivity Pd as a spin current generation source. The critical switching current density is found to be 3.7 × 107 A cm−2, which is in the same order of magnitude as that required for conventional HM/FM systems even though Pd has a smaller θSH than that of generally used HMs. Using harmonic Hall measurements, the damping-like and field-like effective fields per unit current density are estimated to be 56.9 (10−7 Oe A−1 cm2) and 39.8 (10−7 Oe A−1 cm2), respectively. This high efficiency can be attributed to the excellent lattice matching between Co2FeSi and Pd (only 2% mismatch), to a slight Pd diffusion, and possibly to the additional SOTs induced by the in-plane spin component generated in the Co2FeSi layer. Our finding will advance the development of SOT-MRAM devices with both better reading and writing performance.

We demonstrate room-temperature perpendicular magnetic anisotropy (PMA) in Pt/Co/AlOx trilayers sputter-deposited onto a SrTiO3 (STO) (001) substrate. Reflection high-energy electron diffraction and x-ray diffraction results confirm the two-dimensional polycrystalline nature for both Pt and Co layers in PMA films, which are (111) oriented in the out-of-plane direction. While the PMA in Pt/Co/AlOx trilayers on STO (001) is found to have interfacial origins, sizable PMA is maintained when Pt layer thickness is as thin as 1 nm, which is several times to one order of magnitude smaller than the reported values of the spin diffusion length for Pt, thus facilitating spin transmission along the thin-film-normal direction. With the STO (001) substrate serving as the fundamental building block for realizing giant Rashba spin splitting, this work provides a feasible platform for the investigation of magnetization switching in two-dimensional-electron-gas-based magnetic hetero-structures at room temperature.

We report the structural and magnetic properties of the Fe-doped GaSb quantum dots (QDs) (nominal Fe concentration x = 4.7%–16.6%) grown on GaAs (001) substrates by molecular beam epitaxy. The QDs with nanometer-scale dimensions consist of two areas with different crystal structures, a zinc-blende GaAsSb wetting layer and a new phase of FeGaSb alloy that has a simple cubic lattice. The size and distribution of the QDs depend on the Fe concentration, as revealed by atomic force microscopy. Magnetic force microscopy measurements at zero applied magnetic field show the presence of ferromagnetism in the QDs at room temperature with an easy axis in the 1¯10 direction, which is consistent with magnetometry measurements. The Curie temperature in these QDs is very high (>400 K), which is promising for spintronic applications at room temperature.

Interpretations of seismic, gravity and magnetic anomalies and structural data on the coastal zone of southern part of Central Viet Nam (SCVN) and the adjacent Tertiary basins suggest several phases in the tectonic evolution of the study region since the Late Cretaceous to Quaternary. In this paper, we try to clarify the tectonic evolution of SCVN and the adjacent continental margin. The Cretaceous – Paleocene tectonic phase commenced after cessation of the West Pacific plutonic magmatic activity that produced numerous diabases and aplite dykes of mainly sub-meridian orientation. It was characterized by N–S compression and E–W extension. The geomorphology and geology ofSE Asiawere considerably changed during the Neotectonic phases caused by collision between the Indian plate and the Eurasian continent. Two tectonic phases – Early and Late Neotectonic – are separated by a regional unconformity represented by a boundary surface between below strongly deformed strata (synrift) and above less deformed formations (post-rift). The Early Neotectonic phase was related to the left-lateral movement of the Red River Fault Zone (RRFZ) and includes two tectonic sub-phases: Eocene – Oligocene (NW–SE compression), and Oligocene – Miocene (E–W compression). Activity in the Oligocene-Miocene sub-phase gave birth to rift basins in the continental margin of the SCVN. The Late Neotectonic phase began since the RRFZ stopped left-lateral movement and the East Viet Nam (orSouth China) Sea stopped spreading. The Late Neotectonic phase is also divided into two tectonic sub-phases: Late Early Miocene (sub-meridian compression), and Late Miocene – Pliocene (NE–SW compression). The Late Miocene – Pliocene sub-phase is characterized by vertical movements that caused episodic uplifting of the onland terrains, and subsidence of the offshore Phu Khanh basin. Besides, Miocene – Pliocene-Quarternary basaltic eruptions were widespread all over the southern Indosinian terrain and the continental margin.

Abstract Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk properties. Here, by utilizing tunneling anisotropic magnetoresistance in a single-barrier heterostructure composed of La0.6Sr0.4MnO3 (LSMO)/LaAlO3 (LAO)/Nb-doped SrTiO3 (001), we reveal the presence of a peculiar strong two-fold magnetic anisotropy (MA) along the [110]c direction at the LSMO/LAO interface, which is not observed in bulk LSMO. This MA shows unknown behavior that the easy magnetization axis rotates by 90° at an energy of 0.2 eV below the Fermi level in LSMO. We attribute this phenomenon to the transition between the e g and t 2g bands at the LSMO interface. Our finding and approach to understanding the energy dependence of the MA demonstrate a new possibility of efficient control of the interfacial magnetic properties by controlling the band structures of oxide heterostructures.

Abstract Reducing the power consumption necessary for magnetization reversal is one of the most crucial issues facing spintronics devices. Electric field control of the magnetic anisotropy of ferromagnetic thin films is a promising method to solve this problem. However, the electric field is believed to be effective only within several nanometres of the surface in ferromagnetic metals because of its short Thomas-Fermi screening length, which prevents its practical application to devices. Herein, we successfully modulate the magnetic anisotropy of the entire region of the ferromagnetic layers in the elongated mesas of vertical spin field-effect transistors with widths as large as ~500 nm by applying an electric field to the side surface of the metallic GaMnAs-based mesas through an electric double layer. Our results will open up a new pathway for spintronics devices with ultra-low power consumption.

By using magnetic circular dichroism (MCD) spectroscopy with photon energy in both visible (1.5–5 eV) and infrared light regions (0.6–1.7 eV), we systematically investigate the band structure of p-type ferromagnetic semiconductor (Ga1−x,Fex)Sb with various Fe concentrations x = 2%–20% grown by low-temperature molecular beam epitaxy. We observed two peaks in the infrared MCD spectra that can be explained by the optical transitions related to the Fermi level (EF) located in an Fe-related impurity band (IB) in the bandgap. As x increases, the energy shifts of the two peaks suggest that the Fe-related IB extends into the bandgap and EF rises correspondingly. Furthermore, the mobility of hole carriers in these (Ga,Fe)Sb thin films estimated by Hall measurements is very low (0.2–2 cm2/Vs), which is consistent with our conclusion that the hole carriers and EF reside in the IB rather than in the valence band. Our results provide insights into the band structure of p-type ferromagnetic semiconductors (Ga,Fe)Sb with high Curie temperature, which is promising for the realization of spintronic devices operating at room temperature.

The construction of high-rise building and structures has been widely developed recently in Vietnam. Pile foundations are considered one of the most suitable solutions when choosing the foundations for their construction, especially in difficult geological conditions, including seismic areas. According to many researches, geological conditions of Ho Chi Minh City are generally difficult. The occurrence of earthquakes there influences the conditions for the construction. Besides, many historical cases have shown that soil liquefaction is often manifested, negatively affecting the underground structures and foundation working. With an increase in investments of international construction companies and organizations in Vietnam, pile foundations can be designed according to domestic or foreign normative documents. Therefore, at present, a better understanding and detailed analysis of various existing normative documents and methods for designing pile foundations are required, especially when the influence of soil liquefaction is taken into account. This paper presents a review of various normative documents, including Russian, Vietnamese, American and Eurocode. The different methods in these normative documents for calculating the piles' bearing capacity are considered in 2 cases: with and without taking into account the soil liquefaction based on the hypothesis that the additional downward loads due to self-compaction of liquefiable soils affect piles. Finally, a comparison of the calculation results is presented. The comparison shows how these considering methods in these normative documents differ from each other and how much the pile's bearing capacity can be reduced when considering the soil liquefaction in calculations.

A large spin-splitting is essential for spintronic devices. Here, the authors observe a spontaneous spin-splitting energy of between 31.7 and 50 millielectronvolts in n-type indium iron arsenide at temperatures up to several tens of Kelvin, challenging the conventional theory of ferromagnetic semiconductors.

We demonstrate efficient intrinsic spin-to-charge current conversion in a two-dimensional electron gas using an all-epitaxial single-crystal heterostructure of LaSrMnO_{3}/LaAlO_{3}/SrTiO_{3}, which can suppress spin scattering and give us an ideal environment to investigate intrinsic spin-charge conversion. With decreasing temperature to 20 K, the spin-to-charge conversion efficiency is drastically enhanced to +6.7nm. Our band-structure calculation well reproduces this behavior and predicts further enhancement by controlling the density and relaxation time of the carriers.

This study aims to determine the governance factors that influence the scientific research output of lecturers through the application of PLS-SEM, in conjunction with ANOVA and "t"-test. Based on a survey of 398 lecturers in twelve higher education institutions (HEIs) in Vietnam, the psychometric properties of the scales measuring the considered dimensions of scientific research outputs were initially examined through the Exploratory Factor Analysis (EFA) procedure, prior to being input into the PLS-SEM model. The SEM model comprised six constructs for the scientific research outputs: scientific research objectives of HEIs, leadership, decentralization, policies for lecturers, support for scientific research activities, and resources for scientific research. The results reveal that resources for scientific research have the most impact on lecturers' scientific research output, followed by policies for lecturers, support for scientific research activities, scientific research objectives of HEIs, and finally, leadership.

Methylamine (MA0) gas treatment (MATM) is a process that involves the adsorption of MA0 on methylammonium (MA)‐based lead perovskite thin films, forming an adsorption intermediate, which appears as a visually transparent liquid. When MA0 is desorbed from this intermediate, recrystallization of the MA‐based perovskite occurs. Due to the highly reversible nature of MATM and its ability to inherently levelize the film surface through liquefaction, MATM is a promising method for fabricating uniform and intact perovskite thin films over large areas, which is crucial for the commercialization of perovskite solar cells. Herein, efforts to control the MATM process are presented, including slowing down the kinetics of MA adsorption by introducing a diluent into the MA stock solution, establishing a monitoring system to investigate the desorption process in detail, and demonstrating the success of MATM in fabricating perovskite solar modules. It is found that MATM not only heals morphological flaws but also promotes (110) orientation crystallinity and reduces trap density in recrystallized MAPbI3 films. Finally, MATM is applied to prepare perovskite minimodules using an in‐house designed MA‐induced liquefaction and recrystallization reactor. The minimodule (5 × 5 cm) fabricated using MATM achieves 18.32% efficiency, significantly surpassing the performance of those fabricated using antisolvent‐treating (7.50%) and vacuum drying (16.09%) methods. [ABSTRACT FROM AUTHOR]

The conductivity for half-filled disordered Hubbard model in different interaction regimes is studied using a typical medium dynamical mean-field theory. The Kubo formula with the geometrically averaged Green function is used to calculate the optical and dc conductivity of the system. The dependence of the conductivities in the model on the random potential and temperature in the weak and intermediate interaction regimes is investigated numerically. It is shown that in the weak interaction regime at a fixed temperature the optical conductivity at low frequencies as well as the dc conductivity get decreased as disorder strength increases. Whereas in the intermediate interaction regime, the results show a reentrant effect of the insulating phases. Our dc conductivity of a non-interacting disordered system is consistent with those known in the literature and our other results are in agreement with the phase diagram obtained by using typical medium theory with different impurity solvers. [ABSTRACT FROM AUTHOR]