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Ability to digitally control the amount of a deposited material is one of the many advantages of inkjet printing. In this letter, we demonstrate the applicability of inkjet printing for the fabrication of depletion-load nMOS inverters based on metal oxide thin-film-transistors (TFTs) from printed metal oxide precursors where the threshold voltage of the TFTs is controlled by adjusting the thickness of the deposited semiconductor layer. Enhancement- and depletion-mode n-type In2O3 TFTs were fabricated from In-nitrate precursor using two printing strategies: 1) multilayer multinozzle printing and 2) single-layer single-nozzle printing in perpendicular or parallel to the TFT channel. TFTs with saturation mobility up to \sim 2.4 cm2/( \text {V}\cdot \text {s} ) and the ON/OFF-ratio of 10^{7}$ were obtained after annealing at 300 °C. Devices connected as depletion-load nMOS inverters showed gain up to $\sim 26$ on a Si/SiO2 substrate, and an inverter on a flexible polyimide substrate with atomic layer deposited Al2O3 dielectric was demonstrated with a maximum gain of $\sim 45$ . [ABSTRACT FROM AUTHOR]

Elastic scattering angular distributions for 6Li+Si system were measured at and analyzed along with the existing data from the previous measurements in the energy range of . The measured cross-sections and the existing data, forming a set of angular distributions over a range of E/, were analyzed using the phenomenological optical model potential (OMP). Three different sets of potential parameters were used. The energy dependence of the real and the imaginary potential strengths were, subsequently, extracted at the radius of sensitivity () for the system. Continuum Discretized Coupled Channel (CDCC) calculation was performed to explore the contribution of projectile break-up (BU) on the observed energy dependence of the effective potential for elastic scattering of 6Li from Si. The energy variation of the strength of the real potential with continuum coupling was found to agree with the energy dependence of the same extracted from the (OMP) analysis at energies around the barrier. But the behavior of the imaginary strength appeared to be different. The calculated fusion cross-sections, including the effect of BU, clearly overestimated the measured fusion excitation function data in the below and near barrier energies but compared well with the data at higher energies. [ABSTRACT FROM AUTHOR]

In this paper, we use RNAseq to identify senescence and phagocytosis as key factors to understanding how mitomyin C (MMC) stimulates regenerative wound repair. We use conditioned media (CM) from untreated (CMC) and MMC treated (CMM) human and mouse corneal epithelial cells to show that corneal epithelial cells indirectly exposed to MMC secrete elevated levels of immunomodulatory proteins including IL-1α and TGFβ1 compared to cells exposed to CMC. These factors increase epithelial and macrophage phagocytosis and promote ECM turnover. IL-1α supplementation can increase phagocytosis in control epithelial cells and attenuate TGFβ1 induced αSMA expression by corneal fibroblasts. Yet, we show that epithelial cell CM contains factors besides IL-1α that regulate phagocytosis and αSMA expression by fibroblasts. Exposure to CMM also impacts the activation of bone marrow derived dendritic cells and their ability to present antigen. These in vitro studies show how a brief exposure to MMC induces corneal epithelial cells to release proteins and other factors that function in a paracrine way to enhance debris removal and enlist resident epithelial and immune cells as well as stromal fibroblasts to support regenerative and not fibrotic wound healing., (Copyright © 2022. Published by Elsevier Ltd.)

In many animals, maternally synthesized mRNAs are critical for primary germ layer formation. In Xenopus, several maternal mRNAs are enriched in the animal blastomere progenitors of the embryonic ectoderm. We previously identified one of these, WW-domain binding protein 2 N-terminal like (wbp2nl), that others previously characterized as a sperm protein (PAWP) that promotes meiotic resumption. Herein we demonstrate that it has an additional developmental role in regionalizing the embryonic ectoderm. Knock-down of Wbp2nl in the dorsal ectoderm reduced cranial placode and neural crest gene expression domains and expanded neural plate domains; knock-down in ventral ectoderm reduced epidermal gene expression. Conversely, increasing levels of Wbp2nl in the neural plate induced ectopic epidermal and neural crest gene expression and repressed many neural plate and cranial placode genes. The effects in the neural plate appear to be mediated, at least in part, by down-regulating chd, a BMP antagonist. Because the cellular function of Wbp2nl is not known, we mutated several predicted motifs. Expressing mutated proteins in embryos showed that a putative phosphorylation site at Thr45 and an α-helix in the PH-G domain are required to ectopically induce epidermal and neural crest genes in the neural plate. An intact YAP-binding motif also is required for ectopic epidermal gene expression as well as for down-regulating chd. This work reveals novel developmental roles for a cytoplasmic protein that promotes epidermal and neural crest formation at the expense of neural ectoderm., (Copyright © 2017 Elsevier Inc. All rights reserved.)

The inkjet-printing process of precursor solutions containing In nitrate dissolved in 2-methoxyethanol is optimized using ethylene glycol as a cosolvent that allows the stabilization of the droplet formation, leading to a robust, repeatable printing process. The inkjet-printed precursor films are then converted to In 2 O 3 semiconductors at flexible-substrate-compatible low temperatures (150-200 °C) using combined far-ultraviolet (FUV) exposure at ∼160 nm and thermal treatment. The compositional nature of the precursor-to-metal oxide conversion is studied using grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), and Fourier transform infrared (FTIR) spectroscopy that indicate that amorphous, high density (up to 5.87 g/cm 3 ), and low impurity In 2 O 3 films can be obtained using the combined annealing technique. Prolonged annealing (180 min) at 150 °C yields enhancement-mode TFTs with saturation mobility of 4.3 cm 2 /(Vs) and ∼1 cm 2 /(Vs) on rigid Si/SiO 2 and flexible plastic PEN substrates, respectively. This paves the way for manufacturing relatively high-performance, printed metal-oxide TFT arrays on cheap, flexible substrate for commercial applications.

Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm(2) V(-1) s(-1) ) nanocrystalline In2 O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2 O3 semiconductor layers from precursor-solution is performed on a Al2 O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation., (© 2015 VTT Technical Research Centre of Finland.)