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All-inorganic perovskite solar cells (PSCs) with inverted p-i-n configuration have not yet reached the high efficiency achieved in the normal n-i-p architecture. However, the inverted all-inorganic PSC are more compatible with the fabrication of tandem solar cells. In this work, a theoretical study of all-inorganic PSCs with inverted structure ITO/HTL/CsPbIxBr3−x/ETL/Ag, has been performed by means of computer simulation. Four p‐type inorganic materials (NiO, Cu2O, CuSCN and CuI) and three n-type inorganic materials (ZnO, TiO2 and SnO2) were used as hole and electron transport layers (HTL and ETL), respectively. A band gap of 1.78 eV was used for the CsPbI x Br3−x perovskite layer. The simulation results allow identifying that CuI and ZnO are the most appropriate materials as HTL and ETL, respectively. Additionally, optimized values of thickness, acceptor density and defect density in the absorber layer have been obtained for the ITO/CuI/CsPbI x Br3−x /ZnO/Ag, from which, an optimum efficiency of 21.82% was achieved. These promising theoretical results aim to improve the manufacturing process of inverted all-inorganic PSCs and to enhance the performance of perovskite–perovskite tandem solar cells.

Sumario: Introducción - Fundamentos teóricos - Simulación numérica - Resultados - Conclusiones - Apéndices.

All species of scorpions can inject venom, some of them even with the possibility of killing a human. Therefore, early detection and identification are essential to minimize scorpion stings. In this paper, we propose a novel automatic system for the detection and recognition of scorpions using computer vision and machine learning (ML) approaches. Two complementary image-processing techniques were used for the proposed detection method to accurately and reliably detect the presence of scorpions. The first is based on the fluorescent characteristics of scorpions when exposed to ultraviolet light, and the second on the shape features of the scorpions. Also, three models based on ML algorithms for the image recognition and classification of scorpions are compared. In particular, the three species of scorpions found in La Plata city (Argentina): Bothriurus bonariensis (of no sanitary importance), Tityus trivittatus, and Tityus confluence (both of sanitary importance) have been researched using a local binary-pattern histogram algorithm and deep neural networks with transfer learning (DNNs with TL) and data augmentation (DNNs with TL and DA) approaches. A confusion matrix and a receiver operating characteristic curve were used to evaluate the quality of these models. The results obtained show that the model of DNN with TL and DA is the most efficient at simultaneously differentiating between Tityus and Bothriurus (for health security) and between T. trivittatus and T. confluence (for biological research purposes)., Facultad de Ingeniería, Instituto de Investigaciones en Electrónica, Control y Procesamiento de Señales, Centro de Estudios Parasitológicos y de Vectores

[EN] The effects of the offset level and of the doping level in the perovskite layer upon both the reverse saturation current (J0) and the series resistance (Rs) of p-p-n perovskite solar cells have been researched in this paper, using five different materials such as spiro-OMeTAD, Cu2O, CuSCN, NiO and CuI, as Hole Transporting Material (HTM). The analysis was carried out by means of the single and double-diode models of a solar cell and of genetic algorithms based on optimization technique, in order to extract the desired parameters. The minor degradation of J0 and Rs has been found for the condition offset equal to zero and for the highest doping level in p-type perovskite layer. Also, a comparison has been made of the behavior of two reverse saturation currents (J01 and J02). The power conversion efficiency (PCE) has shown to be more strongly dependent on J02 than on J01. Results obtained in this work can be used to improve the manufacturing process of these devices., This work was partially supported by the National Council Research (CONICET), Argentina, by the Universidad Nacional Arturo Jauretche, Argentina, by the Universidad Nacional de Quilmes, Argentina, by the Universidad Nacional de La Plata, Argentina and by the Ministerio de Economía y Competitividad (Grant ENE2016-77798-C4-2-R), Spain

[EN] In this paper, a theoretical study of different p-p-n perovskite solar cells has been performed by means of computer simulation. Effects of the offset level upon the power conversion efficiency (PCE) of these devices have been researched using five different materials such as spiro-OMeTAD, Cu2O, CuSCN, NiO and CuI, as Hole Transporting Layer (HTL). The Solar Cells Capacitance Simulator (SCAPS)-1D has been the tool used for numerical simulation of these devices. A strong dependence of PCE has been found with the difference between the Maximum of the Valence Band of the HTL and perovskite materials, and with the doping level in p-type perovskite layer. A minimum value of hole mobility in the HTL has been also found, below which the PCE is reduced. Efficiencies in the order of 28% have been obtained for the Cu2O/Perovskite/TiO2 solar cell. Results obtained in this work show the potentiality of this promising technology., This work was partially supported by the Universidad Nacional de Quilmes, Argentina, by the Universidad Nacional Arturo Jauretche, Argentina, by the Universidad Nacional de La Plata, Argentina, by the National Council Research (CONICET), Argentina, and by the Ministerio de Economia y Competitividad (Grant ENE2016-77798-C4-2-R), Spain.

Fil: Cappelletti, Marcelo Angel. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet - La Plata. Instituto de Investigaciones en Electronica, Control y Procesamiento de Senales. Universidad Nacional de La Plata. Instituto de Investigaciones en Electronica, Control y Procesamiento de Senales; Argentina. Universidad Nacional Arturo Jauretche; Argentina

The electrical parameters degradation of n-type GaAs solar cells exposed to radiation from high-energy particles has been analyzed by means of computer simulation. Specifically, the radiation damage caused by electron upon the diffusion and recombination currents and the series resistance of the solar cells with different base carrier concentrations have been researched using the NRL method, the PC1D program and a home-made numerical code based on genetic algorithms. Results obtained are useful to predict the behavior of these devices under extreme operating conditions.

In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies. Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional Arturo Jauretche; Argentina Fil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional de Quilmes; Argentina Fil: Morales, Daniel Martin. Universidad Nacional Arturo Jauretche; Argentina Fil: Hasperué, Waldo. Universidad Nacional Arturo Jauretche; Argentina. Universidad Nacional de La Plata. Facultad de Informática. Instituto de Investigación en Informática Lidi; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina