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456 results on '"Marcoussis"'

1. Resonant magneto-acoustic switching: influence of Rayleigh wave frequency and wavevector

Author

Loïc Becerra, Aristide Lemaître, Catherine Gourdon, Piotr Kuszewski, J.-Y. Duquesne, N. Biarrotte, J. von Bardeleben, W. Savero Torres, Ibrahima Camara, Laura Thevenard, Photons, Magnons et Technologies Quantiques ( INSP-E11 ), Institut des Nanosciences de Paris ( INSP ), Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Centre National de la Recherche Scientifique ( CNRS ), Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Centre National de la Recherche Scientifique ( CNRS ), Couches nanométriques : formation, interfaces, défauts ( INSP-E5 ), Centre de Nanosciences et de Nanotechnologies [Marcoussis] ( C2N ), Centre National de la Recherche Scientifique ( CNRS ) -Université Paris-Saclay-Université Paris-Sud - Paris 11 ( UP11 ), Acoustique pour les nanosciences ( INSP-E3 ), Photons, Magnons et Technologies Quantiques (INSP-E11), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Couches nanométriques : formation, interfaces, défauts (INSP-E5), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Acoustique pour les nanosciences (INSP-E3)

Subjects
FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, Magnetization, symbols.namesake, 0103 physical sciences, General Materials Science, Wave vector, Thin film, Rayleigh wave, 010306 general physics, Magneto, Computer Science::Databases, [PHYS]Physics [physics], Physics, Condensed Matter - Materials Science, [ PHYS ] Physics [physics], Condensed matter physics, Spin-transfer torque, Materials Science (cond-mat.mtrl-sci), Acoustic wave, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 3. Good health, Amplitude, symbols, 0210 nano-technology
Abstract

We show on in-plane magnetized thin films that magnetization can be switched efficiently by 180 degrees using large amplitude Rayleigh waves travelling along the hard or easy magnetic axis. Large characteristic filament-like domains are formed in the latter case. Micromagnetic simulations clearly confirm that this multi-domain configuration is compatible with a resonant precessional mechanism. The reversed domains are in both geometries several hundreds of \mu m^2, much larger than has been shown using spin transfer torque- or field-driven precessional switching. We show that surface acoustic waves can travel at least 1mm before addressing a given area, and can interfere to create magnetic stripes that can be positionned with a sub-micronic precision., Comment: Movies can be found at the following link: https://www.dropbox.com/sh/frdels1bibcgw80/AADWgqp8W8T7UHKRY0Yrazoya?dl=0. This article has been submitted to the special "Magneto-elastic effects" issue of the Journal of Physics of Condensed Matter

Published
2018
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2. Wavefunction engineering in HgSe/HgTe colloidal heterostructures to enhance mid infrared photoconductive properties

Author

Nicolas Goubet, Sébastien Royer, Sandrine Ithurria, Bertille Martinez, Hervé Cruguel, Xiang Zhen Xu, Emmanuel Lhuillier, Clément Livache, Mathieu G. Silly, Gilles Patriarche, Benoit Dubertret, Abdelkarim Ouerghi, Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), ANR-11-IDEX-0004,SUPER,Sorbonne Universités à Paris pour l'Enseignement et la Recherche(2011), ANR-15-CE24-0016,H2DH,Hétérostructures bi-dimendionnelles hybrides pour l'optoélectronique(2015), ANR-15-CE09-0014,NanoDoSe,Dopage de Nanocristaux Semiconducteurs par chimie douce(2015), European Project: 756225,blackQD, Physico-chimie et dynamique des surfaces ( INSP-E6 ), Institut des Nanosciences de Paris ( INSP ), Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de Physique et d'Etude des Matériaux ( LPEM ), Université Pierre et Marie Curie - Paris 6 ( UPMC ) -ESPCI ParisTech-Centre National de la Recherche Scientifique ( CNRS ), Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Centre National de la Recherche Scientifique ( CNRS ), Centre de Nanosciences et de Nanotechnologies [Marcoussis] ( C2N ), Université Paris-Sud - Paris 11 ( UP11 ) -Université Paris-Saclay-Centre National de la Recherche Scientifique ( CNRS ), Synchrotron SOLEIL ( SSOLEIL ), Centre National de la Recherche Scientifique ( CNRS ), ANR-11-IDEX-0004-02/10-LABX-0067,MATISSE,MATerials, InterfaceS, Surfaces, Environment ( 2011 ), ANR : H2DH, ANR : nanodose, European Project : 756225,blackQD, and Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)

Subjects
Materials science, nanpocrystal, Infrared spectroscopy, Bioengineering, intraband transition, 02 engineering and technology, Photodetection, 010402 general chemistry, intraband, 7. Clean energy, 01 natural sciences, Condensed Matter::Materials Science, HgSe/HgTe heterostructures, Condensed Matter::Superconductivity, General Materials Science, heterostrcture, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Wave function, narrow band gap nanocrystals, [PHYS]Physics [physics], [ PHYS ] Physics [physics], business.industry, Mechanical Engineering, Photoconductivity, Doping, Heterojunction, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Thermal conduction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, mid infrared, 0104 chemical sciences, Wavelength, [ CHIM.MATE ] Chemical Sciences/Material chemistry, infrared, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology, business, [ PHYS.COND ] Physics [physics]/Condensed Matter [cond-mat]
Abstract

The use of intraband transition is an interesting alternative path for the design of optically active complex colloidal materials in the mid-infrared range. However, so far, the performance obtained for photodetection based on intraband transition remains much smaller than the one relying on interband transition in narrow-band-gap materials operating at the same wavelength. New strategies have to be developed to make intraband materials more effective. Here, we propose growing a heterostructure of HgSe/HgTe as a means of achieving enhanced intraband-based photoconduction. We first tackle the synthetic challenge of growing a heterostructure on soft (Hg-based) material. The electronic spectrum of the grown heterostructure is then investigated using a combination of numerical simulation, infrared spectroscopy, transport measurement, and photoemission. We report a type-II band alignment with reduced doping compared with a core-only object and boosted hole conduction. Finally, we probe the photoconductive properties of the heterostructure while resonantly exciting the intraband transition by using a high-power-density quantum cascade laser. Compared to the previous generation of material based on core-only HgSe, the heterostructures have a lower dark current, stronger temperature dependence, faster photoresponse (with a time response below 50 μs), and detectivity increased by a factor of 30.

Published
2018
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3. A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting

Author

Simon Charbonnier, Gilles Patriarche, Maxime Vallet, Nicolas Bertru, Antoine Létoublon, Charles Cornet, Eric Tournié, Ida Lucci, Laurent Cerutti, Laurent Pedesseau, Anne Ponchet, T. Rohel, Jean-Baptiste Rodriguez, Yoan Léger, Pascal Turban, Fonctions Optiques pour les Technologies de l'informatiON ( FOTON ), Université de Rennes 1 ( UR1 ), Université de Rennes ( UNIV-RENNES ) -Université de Rennes ( UNIV-RENNES ) -Institut National des Sciences Appliquées - Rennes ( INSA Rennes ) -École Nationale Supérieure des Sciences Appliquées et de Technologie ( ENSSAT ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Bretagne Loire ( UBL ) -IMT Atlantique Bretagne-Pays de la Loire ( IMT Atlantique ), Institut de Physique de Rennes ( IPR ), Université de Rennes ( UNIV-RENNES ) -Université de Rennes ( UNIV-RENNES ) -Centre National de la Recherche Scientifique ( CNRS ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Institut d’Electronique et des Systèmes ( IES ), Université de Montpellier ( UM ) -Centre National de la Recherche Scientifique ( CNRS ), Centre de Nanosciences et de Nanotechnologies [Marcoussis] ( C2N ), Université Paris-Sud - Paris 11 ( UP11 ) -Université Paris-Saclay-Centre National de la Recherche Scientifique ( CNRS ), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Institut de Physique de Rennes (IPR), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), 14-CE26-0014-01, Agence Nationale de la Recherche, ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, water splitting, law.invention, nanopatterning, Biomaterials, law, Electrochemistry, Ohmic contact, GaP/Si, textured surfaces, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 6. Clean water, Surface energy, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, self‐organization, chemistry, Transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Density functional theory, Scanning tunneling microscope, 0210 nano-technology, business, Vicinal, Molecular beam epitaxy
Abstract

International audience; This work shows that a large‐scale textured GaP template monolithically integrated on Si can be developed by using surface energy engineering, for water‐splitting applications. The stability of (114)A facets is first shown, based on scanning tunneling microscopy images, transmission electron microscopy, and atomic force microscopy. These observations are then discussed in terms of thermodynamics through density functional theory calculations. A stress‐free nanopatterned surface is obtained by molecular beam epitaxy, composed of a regular array of GaP (114)A facets over a 2 in. vicinal Si substrate. The advantages of such textured (114)A GaP/Si template in terms of surface gain, band lineups, and ohmic contacts for water‐splitting applications are finally discussed.

Published
2018
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4. Continuous-variable entanglement of two bright coherent states that never interacted

Author

David Barral, Virginia D'Auria, Sébastien Tanzilli, Lorenzo M. Procopio, Kamel Bencheikh, Juan Ariel Levenson, Nadia Belabas, Centre de Nanosciences et de Nanotechnologies [Marcoussis] ( C2N ), Centre National de la Recherche Scientifique ( CNRS ) -Université Paris-Saclay-Université Paris-Sud - Paris 11 ( UP11 ), Institut de Physique de Nice ( INPHYNI ), Université Nice Sophia Antipolis ( UNS ), Université Côte d'Azur ( UCA ) -Université Côte d'Azur ( UCA ) -Centre National de la Recherche Scientifique ( CNRS ), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Institut de Physique de Nice (INPHYNI), Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)

Subjects
Physics, Quantum Physics, [ PHYS.QPHY ] Physics [physics]/Quantum Physics [quant-ph], Field (physics), Degenerate energy levels, FOS: Physical sciences, Physics::Optics, Quantum entanglement, 16. Peace & justice, 01 natural sciences, 010309 optics, Multipartite, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], Quantum state, Quantum mechanics, 0103 physical sciences, Coherent states, Quantum Physics (quant-ph), 010306 general physics, Quantum, ComputingMilieux_MISCELLANEOUS, Energy (signal processing), Optics (physics.optics), Physics - Optics
Abstract

We study continuous-variable entanglement of bright quantum states in a pair of evanescently coupled nonlinear $\chi^{(2)}$ waveguides operating in the regime of degenerate down-conversion. We consider the case where only the energy of the nonlinearly generated fields is exchanged between the waveguides while the pump fields stay independently guided in each original waveguide. We show that this device, when operated in the depletion regime, entangles the two non-interacting bright pump modes due to a nonlinear cascade effect. It is also shown that two-colour quadripartite entanglement can be produced when certain system parameters are appropriately set. This device works in the traveling-wave configuration, such that the generated quantum light shows a broad spectrum. The proposed device can be easily realized with current technology and therefore stands as a good candidate for a source of bipartite or multipartite entangled states for the emerging field of optical continuous-variable quantum information processing., Comment: 10 pages, 12 figures

Published
2017
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5. Integration of tunable liquid crystal microcells on 1.55μm photodetector arrays using nanoimprint technology

Author

Sadani, Benattou, Camps, Thierry, Boisnard, Benjamin, Doucet, Jean-Baptiste, Bardinal, Véronique, Levallois, Christophe, Paranthoen, Cyril, Bouchoule, Sophie, DUPONT, Laurent, Équipe MICrosystèmes d'Analyse (LAAS-MICA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Équipe Micro-Nanofluidique pour les sciences de la vie et de l’environnement (LAAS-MILE), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Département Optique (IMT Atlantique - OPT), IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Équipe MICrosystèmes d'Analyse ( LAAS-MICA ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Équipe Micro-Nanofluidique pour les sciences de la vie et de l’environnement ( LAAS-MILE ), Service Techniques et Équipements Appliqués à la Microélectronique ( LAAS-TEAM ), Fonctions Optiques pour les Technologies de l'informatiON ( FOTON ), Université de Rennes 1 ( UR1 ), Université de Rennes ( UNIV-RENNES ) -Université de Rennes ( UNIV-RENNES ) -Institut National des Sciences Appliquées - Rennes ( INSA Rennes ) -École Nationale Supérieure des Sciences Appliquées et de Technologie ( ENSSAT ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Bretagne Loire ( UBL ) -IMT Atlantique Bretagne-Pays de la Loire ( IMT Atlantique ), Centre de Nanosciences et de Nanotechnologies [Marcoussis] ( C2N ), Université Paris-Sud - Paris 11 ( UP11 ) -Université Paris-Saclay-Centre National de la Recherche Scientifique ( CNRS ), Département Optique ( OPT ), IMT Atlantique Bretagne-Pays de la Loire ( IMT Atlantique ), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)

Subjects
photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Physics::Optics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; Compact wavelength-tunable photonic devices are key elements for the development of next-generation optical communication systems and miniaturized optical sensors.

Published
2017

6. Light Trapping in Ultrathin CIGS Solar Cells with Nanostructured Back Mirrors

Author

Christophe Sauvan, Negar Naghavi, Fabien Mollica, Andrea Cattoni, Stéphane Collin, Philippe Lalanne, Clément Colin, Jean-François Guillemoles, Julie Goffard, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), Laboratoire Charles Fabry / Naphel, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Laboratoire Photonique, Numérique et Nanosciences (LP2N), Université de Bordeaux (UB)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] ( C2N ), Centre National de la Recherche Scientifique ( CNRS ) -Université Paris-Saclay-Université Paris-Sud - Paris 11 ( UP11 ), Laboratoire Nanotechnologies Nanosystèmes ( LN2 ), Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Université de Sherbrooke [Sherbrooke]-Université Grenoble Alpes ( UGA ) -École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon, Institut de Recherche et Développement sur l'Energie Photovoltaïque ( IRDEP ), Ecole Nationale Supérieure de Chimie de Paris- Chimie ParisTech-PSL ( ENSCP ) -Centre National de la Recherche Scientifique ( CNRS ) -EDF R&D ( EDF R&D ), EDF ( EDF ) -EDF ( EDF ), Laboratoire Charles Fabry ( LCF ), Université Paris-Sud - Paris 11 ( UP11 ) -Institut d'Optique Graduate School ( IOGS ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Paris-Sud - Paris 11 ( UP11 ) -Institut d'Optique Graduate School ( IOGS ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire Photonique, Numérique et Nanosciences ( LP2N ), and Centre National de la Recherche Scientifique ( CNRS ) -Institut d'Optique Graduate School ( IOGS ) -Université de Bordeaux ( UB )

Subjects
Materials science, Nanostructure, photovoltaic cells, Nanophotonics, 02 engineering and technology, Quantum dot solar cell, 01 natural sciences, 7. Clean energy, law.invention, Absorption, CIGS thin-film solar cells, law, Teknik och teknologier, 0103 physical sciences, Solar cell, nanostructures, Fysik, Electrical and Electronic Engineering, Absorption (electromagnetic radiation), 010302 applied physics, Ga)Se2 (CIGS) and CdTe thin-film solar cells, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Cu(In, Resonance, modeling, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Copper indium gallium selenide solar cells, Electronic, Optical and Magnetic Materials, Physical Sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Engineering and Technology, nanophotonics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business, Layer (electronics)
Abstract

Novel architectures for light trapping in ultrathin Cu(In,Ga)Se $_2$ (CIGS) solar cells are proposed and numerically investigated. They are composed of a flat CIGS layer with nanostructured back mirrors made of highly reflective metals. Multi-resonant absorption is obtained for two different patterns of nanostructured mirrors. It leads to a dramatic increase in the short-circuit current predicted for solar cells with very thin CIGS layers. We analyze the resonance phenomena and the density of photogenerated carriers in the absorber. We discuss the impact of the material used for the buffer layer (CdS and ZnS) and the back mirror (Mo, Cu, Au, and Ag). We investigate various CIGS thicknesses from 100 to 500 nm, and we compare our numerical results with experimental data taken from the literature. We predict a short-circuit current of $J_{\text{sc}}$ = 33.6 mA/cm $^2$ for a realistic solar cell made of a 200-nm-thick CIGS absorber with a copper nanostructured mirror. It opens a way toward ultrathin CIGS solar cells with potential conversion efficiencies up to 20%.

Published
2017
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7. High-quality photonic entanglement for wavelength-multiplexed quantum communication based on a silicon chip

Author

Tommaso Lunghi, Marco Bentivegna, Florent Mazeas, Eric Picholle, Sébastien Tanzilli, Florian Kaiser, Nadia Belabas-Plougonven, L. A. Ngah, M. Traetta, Djeylan Aktas, Grégory Sauder, Eric Cassan, X. Le Roux, Carlos Alonso Ramos, Laurent Vivien, Weiwei Zhang, Laurent Labonté, Delphine Marris-Morini, Laboratoire de physique de la matière condensée (LPMC), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), Alma Mater Studiorum Università di Bologna [Bologna] (UNIBO), Dipartimento di Fisica [Roma La Sapienza], Università degli Studi di Roma 'La Sapienza' = Sapienza University [Rome] (UNIROMA), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-15-CE24-0005,SITQOM,Photonique sur silicium pour l'optique et la communication quantiques(2015), European Project: 608062,EC:FP7:PEOPLE,FP7-PEOPLE-2013-ITN,PICQUE(2013), Laboratoire de physique de la matière condensée ( LPMC ), Centre National de la Recherche Scientifique ( CNRS ) -Université Nice Sophia Antipolis ( UNS ), Université Côte d'Azur ( UCA ) -Université Côte d'Azur ( UCA ), Dipartimento di Elettronica Informatica e Sistemistica, University of Bologna, Università degli Studi di Roma 'La Sapienza' [Rome], Centre de Nanosciences et de Nanotechnologies [Marcoussis] ( C2N ), Université Paris-Sud - Paris 11 ( UP11 ) -Université Paris-Saclay-Centre National de la Recherche Scientifique ( CNRS ), ANR-15-CE24-0005,SITQOM,Silicon photonics for quantum optics and communication, European Project : 608062,EC:FP7:PEOPLE,FP7-PEOPLE-2013-ITN,PICQUE ( 2013 ), Centre National de la Recherche Scientifique (CNRS)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), and Università degli Studi di Roma 'La Sapienza' = Sapienza University [Rome]

Subjects
[ PHYS.QPHY ] Physics [physics]/Quantum Physics [quant-ph], FOS: Physical sciences, Physics::Optics, 02 engineering and technology, Quantum entanglement, Quantum channel, 7. Clean energy, 01 natural sciences, Noise (electronics), 010309 optics, Resonator, Optics, Photon entanglement, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], 0103 physical sciences, quantum communication, Quantum information science, Physics, Quantum Physics, Silicon photonics, multiplexing, silicon photonics, business.industry, nonlinear optics, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Photonics, four-wave mixing, 0210 nano-technology, business, Quantum Physics (quant-ph), Physics - Optics, Optics (physics.optics)
Abstract

International audience; We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400 pairs of entangled photons /s/MHz for 500 µW pump power. Additionally, the resonator has been engineered so as to generate a frequency comb structure compatible with standard telecom dense wavelength division multiplexers. We demonstrate high-purity energy-time entanglement, i.e., free of photonic noise, with near perfect raw visibilities (> 98%) between various channel pairs in the telecom C-band. Such a compact source stands as a path towards more complex quantum photonic circuits dedicated to quantum communication systems.

Published
2016
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8. High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

Author

Pascal Chrétien, Laurent Travers, L. Lu, Frédéric Houzé, Martina Morassi, Francois H. Julien, Noelle Gogneau, Maria Tchernycheva, Nikoletta Jegenyes, Centre de Nanosciences et de Nanotechnologies [Marcoussis] ( C2N ), Université Paris-Sud - Paris 11 ( UP11 ) -Université Paris-Saclay-Centre National de la Recherche Scientifique ( CNRS ), Laboratoire Génie électrique et électronique de Paris ( GeePs ), Centre National de la Recherche Scientifique ( CNRS ) -CentraleSupélec-Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Université Paris-Sud - Paris 11 ( UP11 ), Centre de Nanosciences et de Nanotechnologies [Orsay] ( C2N ), Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), Region Ile-de-France in the framework of DIM Nano-K, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), and Centre National de la Recherche Scientifique (CNRS)

Subjects
energy harvesting, III-N nanowires, piezoelectric generation, atomic force microscope, piezo-generators, Materials science, Nanostructure, General Chemical Engineering, Nanowire, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Article, lcsh:Chemistry, 0103 physical sciences, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Power density, 010302 applied physics, nanotechnology, business.industry, Schottky diode, 021001 nanoscience & nanotechnology, Piezoelectricity, lcsh:QD1-999, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Layer (electronics), Energy harvesting, Voltage
Abstract

International audience; We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. Based on the measured output signals, we estimate that one layer of dense InGaN/GaN-based NW can generate a maximum output power density of about 3.3 W/cm2. These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources. View Full-Text

Published
2018
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9. Electrochemical DNA biosensors based on long-range electron transfer: investigating the efficiency of a fluidic channel microelectrode compared to an ultramicroelectrode in a two-electrode setup

Author

Claude Deslouis, Mathieu Lazerges, Anne-Marie Haghiri-Gosnet, D. Rose, Marie-Charlotte Horny, Fethi Bedioui, Jean Gamby, Antoine Pallandre, Jean-Michel Siaugue, Université Pierre et Marie Curie - Paris 6 (UPMC), Laboratoire Interfaces et Systèmes Electrochimiques (LISE), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Unité de Technologies Chimiques et Biologiques pour la Santé (UTCBS - UM 4 (UMR 8258 / U1022)), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Paris Descartes - Paris 5 (UPD5)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), PHysicochimie des Electrolytes et Nanosystèmes InterfaciauX (PHENIX), Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), This work was supported by the LabEx MiChem part of French state funds managed by the ANR within the Investissements d'Avenir programme under reference ANR-11- IDEX-0004-02. The authors would also like to thank the ' Cen- tre de Nanosciences et de Nanostructures ' for its financial support through the clean room facilities in Marcoussis, France, ANR-11-IDEX-0004,SUPER,Sorbonne Universités à Paris pour l'Enseignement et la Recherche(2011), Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC), Université Paris-Sud - Paris 11 (UP11)-Université Paris Diderot - Paris 7 (UPD7)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Paris Descartes - Paris 5 (UPD5)-Ecole Nationale Supérieure de Chimie de Paris- Chimie ParisTech-PSL (ENSCP), Université Pierre et Marie Curie - Paris 6 (UPMC)-ESPCI ParisTech-Centre National de la Recherche Scientifique (CNRS), ANR-11-IDEX- 0004-02,program Investments for the future,ANR-11-IDEX- 0004-02, Laboratoire Interfaces et Systèmes Electrochimiques ( LISE ), Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Centre National de la Recherche Scientifique ( CNRS ), Centre de Nanosciences et de Nanotechnologies [Marcoussis] ( C2N ), Université Paris-Sud - Paris 11 ( UP11 ) -Université Paris-Saclay-Centre National de la Recherche Scientifique ( CNRS ), Unité de Technologies Chimiques et Biologiques pour la Santé ( UTCBS - UM 4 (UMR 8258 / U1022) ), Ecole Nationale Supérieure de Chimie de Paris- Chimie ParisTech-PSL ( ENSCP ) -Université Paris Descartes - Paris 5 ( UPD5 ) -Institut National de la Santé et de la Recherche Médicale ( INSERM ) -Centre National de la Recherche Scientifique ( CNRS ), PHysicochimie des Electrolytes et Nanosystèmes InterfaciauX ( PHENIX ), Université Pierre et Marie Curie - Paris 6 ( UPMC ) -ESPCI ParisTech-Centre National de la Recherche Scientifique ( CNRS ), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Paris Descartes - Paris 5 (UPD5)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)

Subjects
[SDV.BIO]Life Sciences [q-bio]/Biotechnology, Microfluidics, Biomedical Engineering, Analytical chemistry, ultramicroelectrode, Bioengineering, Ultramicroelectrode, Biosensing Techniques, 02 engineering and technology, 010402 general chemistry, [ CHIM ] Chemical Sciences, 01 natural sciences, Biochemistry, Electron Transport, Electron transfer, [ CHIM.OTHE ] Chemical Sciences/Other, Lab-On-A-Chip Devices, Electrochemistry, [CHIM]Chemical Sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Detection limit, Chemistry, [ SDV.BIO ] Life Sciences [q-bio]/Biotechnology, Nucleic Acid Hybridization, DNA, General Chemistry, 021001 nanoscience & nanotechnology, microelectrode, 0104 chemical sciences, Microelectrode, Electrode, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Cyclic voltammetry, [CHIM.OTHE]Chemical Sciences/Other, 0210 nano-technology, Microelectrodes, Biosensor
Abstract

International audience; Here, we describe the transposition of an ultramicroelectrode (UME) setup into a microfluidic chip configuration for DNA biosensors. The hydrodynamic properties of the fluidic channel microelectrode were screened with an [FeIJIII)IJCN) 6 ] 3− /[Fe(II)(CN) 6 ] 4− redox couple by cyclic voltammetry to provide a basis for further biological processes. A 23-base DNA probe was self-assembled into a monolayer on gold microelectrodes both in classical configuration and integrated in a microfluidic setup. Special interest was focused on the DNA target mimicking the liver-specific micro-ribonucleic acid 122 (miRNA122). Long-range electron transfer was chosen for transducing the hybridization. This direct transduction was indeed significantly enhanced after hybridization due to DNA-duplex π-stacking and the use of redox methylene blue as a DNA intercalator. Quantification of the target was deduced from the resulting electrical signal characterized by cyclic voltammetry. The limit of detection for DNA hybridization was 0.1 fM in stopped flow experiments, where it can reach 1 aM over a 0.5 μL s −1 flow rate, a value 10 4-fold lower than the one measured with a conventional UME dipped into an electrolyte droplet under the same analytical conditions. An explanation was that forced convection drives more biomolecules to the area of detection even if a balance between the speed of collection and the number of biomolecules collected has been found. The latter point is discussed here along with an attempt to explain why the sensor has reached such an unexpected value for the limit of detection.

Published
2016
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12. Spin–orbit torque switching of a ferromagnet with picosecond electrical pulses

Author

Xinping Shi, Elodie Martin, Richard Wilson, Aldo Ygnacio Arriola Córdova, Jon Gorchon, Sébastien Petit-Watelot, Juan-Carlos Rojas-Sánchez, Gregory Malinowski, Jeffrey Bokor, Kaushalya Jhuria, Aristide Lemaître, Michel Hehn, Stéphane Mangin, Akshay Pattabi, Julius Hohlfeld, Roberto Lo Conte, Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Department of Electrical Engineering and Computer Sciences (Berkeley EECS), University of California [Riverside] (UCR), University of California, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Magnetization dynamics, Materials science, Kerr effect, Spintronics, business.industry, Spin-transfer torque, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Electronic, Optical and Magnetic Materials, Switching time, Condensed Matter::Materials Science, Magnetization, Picosecond, 0103 physical sciences, Optoelectronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, 010306 general physics, 0210 nano-technology, business, Instrumentation, Ultrashort pulse
Abstract

The development of approaches that can efficiently control the magnetization of magnetic materials is central to the creation of fast and low-power spintronic devices. Spin transfer torque can be used to electrically manipulate magnetic order in devices, but is typically limited to nanosecond timescales. Alternatively, spin–orbit torque can be employed, and switching with current pulses down to ~200 ps has been demonstrated. However, the upper limit to magnetization switching speed remains unestablished. Here, we show that photoconductive switches can be used to apply 6-ps-wide electrical pulses and deterministically switch the out-of-plane magnetization of a common thin cobalt film via spin–orbit torque. We probe the ultrafast magnetization dynamics due to spin–orbit torques with sub-picosecond resolution using the time-resolved magneto-optical Kerr effect (MOKE). We also estimate that the magnetization switching consumes less than 50 pJ in micrometre-sized devices. The magnetization of a cobalt thin film can be reversed by spin–orbit torques using picosecond electrical pulses that are generated by photoconductive switches.

Published
2020
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19. Growth Dynamics of Gallium Nanodroplets Driven by Thermally Activated Surface Diffusion

Author

Laurent Travers, Federico Panciera, Zhaslan Baraissov, Utkur Mirsaidov, Jean-Christophe Harmand, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Surface diffusion, Materials science, Dynamics (mechanics), Nucleation, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Catalysis, chemistry, Chemical physics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Physical and Theoretical Chemistry, Gallium, 0210 nano-technology
Abstract

International audience; The growth of catalytic liquid metal nanodroplets on flat substrates is essential for many technological applications. However, the detailed nucleation and growth dynamics of these nanodroplets remains unclear. Here, using in situ Transmission Electron Microscopy (TEM) imaging, we track in real-time the growth of individual Ga nanodroplets from a beam of Ga vapor. We show that the nucleation and growth are driven by thermally-activated surface diffusion of Ga adatoms, with the diffusion activation energy of E_D=95±10 meV on a SiNx surface. More importantly, our analysis shows that Ga-dimers serve as the critical nucleation clusters and that the nanodroplet growth follows a power-law of form R(t)∝〖e^(〖-E〗_D⁄(k_B T)) (t-t_0 )〗^(1⁄2). These insights into the growth dynamics of metallic nanodroplets are essential for tailoring their size and density for their application in self-catalyzed growth of nanomaterials.

Published
2019
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20. Real Space Observation of Electronic Coupling between Self-Assembled Quantum Dots

Author

Jean-Christophe Girard, Guillemin Rodary, C. David, Aristide Lemaître, B. Fain, Lorenzo Bernardi, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), and Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N)

Subjects
Photon, Phonon, Bioengineering, 02 engineering and technology, Molecular physics, law.invention, quantum information, law, General Materials Science, Quantum coupling, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Quantum information, quantum dots molecules, Physics, scanning tunneling microscopy and spectroscopy, Mechanical Engineering, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Quantum technology, Quantum dot, electronic properties, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Scanning tunneling microscope, 0210 nano-technology, Electronic density
Abstract

International audience; The control of quantum coupling between nano-objects is essential to quantum technologies. Confined nanostructures, such as cavities, resonators, or quantum dots, are designed to enhance interactions between electrons, photons, or phonons, giving rise to new properties, on which devices are developed. The nature and strength of these interactions are often measured indirectly on an assembly of dissimilar objects. Here, we adopt an innovative point of view by directly mapping the coupling of single nanostructures using scanning tunneling microscopy and spectroscopy (STM and STS). We take advantage of the unique capabilities of STM/STS to map simultaneously the nano-object's morphology and electronic density in order to observe in real space the electronic coupling of pairs of In(Ga)As/GaAs self-assembled quantum dots (QDs), forming quantum dot molecules (QDMs). Differential conductance maps dI/dV (E, x, y) demonstrate the presence of an effective electronic coupling, leading to bonding and antibonding states, even for dissymmetric QDMs. The experimental results are supported by numerical simulations. The actual geometry of the QDMs is taken into account to determine the strength of the coupling, showing the crucial role of quantum dot size and pair separation for device growth optimization

Published
2019
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21. Toward a highly efficient large surface Perovskite Silicon 4-Terminal tandem module

Author

Sophie Bernard, Marion Provost, Nathanaelle Schneider, Damien Coutancier, Romain Bodeux, Thomas Guillemot, Valerie Daniau, Sebastien Jutteau, Stéphane Collin, Emilie Raoult, Jean Rousset, Armelle Yaiche, Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Plate-Forme de Recherche en Imagerie Cellulaire de Haute-Normandie (PRIMACEN), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institute for Research and Innovation in Biomedicine (IRIB), Normandie Université (NU)-Normandie Université (NU)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Glycobiologie et Matrice Extracellulaire Végétale (Glyco-MEV), Normandie Université (NU)-Normandie Université (NU), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), EDF R&D (EDF R&D), EDF (EDF), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-High-tech Research Infrastructures for Life Sciences (HeRacLeS), Normandie Université (NU)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Fabrication, Silicon, business.industry, Photovoltaic system, chemistry.chemical_element, Perovskite solar cell, [CHIM.MATE]Chemical Sciences/Material chemistry, Active surface, 7. Clean energy, Die (integrated circuit), chemistry, Stack (abstract data type), Optoelectronics, business, ComputingMilieux_MISCELLANEOUS, Perovskite (structure)
Abstract

This work presents a path to the fabrication of highly efficient, large size 4-Terminal (4T) perovskite silicon tandem. As a first step, our deposition process of perovskite based on spin coating was transferred to slot die coating, enabling large surface areas. Simultaneously, a semitransparent perovskite solar cell was designed to ensure a high optical transmission in the near-infrared (NIR) and we achieved a transmission of 90% at 900 nm, in good agreement with the optical simulation. As a second step, a stack reproducing the perovskite solar cell has been packaged with an n-PERT silicon cell in a box printed in 3D to form a pseudo-tandem with 16 cm2 active area. This device allows to guarantee its durability and to precisely assess the performances of the filtered silicon bottom cell thanks to correct optical alignment. It also minimizes optical losses between both silicon bottom and perovskite top cells. Combining a 16.9% perovskite top cell (active surface of 0.09 cm2) deposited by slot die and a 6.4% filtered silicon bottom cell results in an efficiency of 23.3% for a 4T tandem solar cell. Moreover, a filtered silicon solar with 8.2% efficiency is obtained using a perovskite solar cell stack optimized for NIR. The fabrication of 4T tandem over 16 cm2 active area are currently in progress and will be discussed.

Published
2021
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22. Deterministic assembly of a charged-quantum-dot–micropillar cavity device

Author

Pascale Senellart, J. C. Loredo, N. Somaschi, Loïc Lanco, A. Harouri, Aristide Lemaître, Isabelle Sagnes, Carlos Antón, Olivier Krebs, C. Millet, P. Hilaire, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Brightness, Photon, Physics::Optics, FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Cluster (physics), 010306 general physics, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS, Physics, Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Charge (physics), 021001 nanoscience & nanotechnology, Coupling (probability), Quantum dot, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Photonics, Atomic physics, 0210 nano-technology, business, Quantum Physics (quant-ph)
Abstract

Developing future quantum communication may rely on the ability to engineer cavity-mediated interactions between photons and solid-state artificial atoms, in a deterministic way. Here, we report a set of technological and experimental developments for the deterministic coupling between the optical mode of a micropillar cavity and a quantum dot trion transition. We first identify a charged transition through in-plane magnetic field spectroscopy, and then tune the optical cavity mode to its energy via in-situ lithography. In addition, we design an asymmetric tunneling barrier to allow the optical trapping of the charge, assisted by a quasi-resonant pumping scheme, in order to control its occupation probability. We evaluate the generation of a positively-charged quantum dot through second order auto-correlation measurements of its resonance fluorescence, and the quality of light-matter interaction for these spin-photon interfaces is assessed by measuring the performance of the device as a single-photon source., Comment: 9 pages, 7 figures

Published
2020
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23. Bright Polarized Single-Photon Source Based on a Linear Dipole

Author

J. C. Loredo, Pascale Senellart, H. Ollivier, Carlos Antón, M. Billard, S. C. Wein, N. Coste, Priya, N. Somaschi, Loïc Lanco, L. Tazaïrt, Isabelle Sagnes, A. Harouri, Olivier Krebs, S. E. Thomas, Aristide Lemaître, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, [PHYS]Physics [physics], Brightness, Quantum Physics, Photon, Degree (graph theory), Linear polarization, General Physics and Astronomy, FOS: Physical sciences, Physics::Optics, 01 natural sciences, 3. Good health, Dipole, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], Quantum dot, Single-photon source, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, Atomic physics, 010306 general physics, Quantum Physics (quant-ph), Excitation, ComputingMilieux_MISCELLANEOUS
Abstract

Semiconductor quantum dots in cavities are promising single-photon sources. Here, we present a path to deterministic operation, by harnessing the intrinsic linear dipole in a neutral quantum dot via phonon-assisted excitation. This enables emission of fully polarized single photons, with a measured degree of linear polarization up to 0.994 $\pm$ 0.007, and high population inversion -- 85\% as high as resonant excitation. We demonstrate a single-photon source with a polarized first lens brightness of 0.50 $\pm $ 0.01, a single-photon purity of 0.954 $\pm$ 0.001 and single-photon indistinguishability of 0.909 $\pm$ 0.004., 5 pages, 4 figures, plus supplementary material

Published
2020
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24. Characterization of nanomedicines’ surface coverage using molecular probes and capillary electrophoresis

Author

Myriam Taverna, A. Benmalek, Fanny Varenne, I. Le Potier, Jean-Baptiste Coty, Claire Smadja, Christine Vauthier, O. Garsaa, Institut Galien Paris-Sud (IGPS), Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Proteins and Nanotechnologies in Separation Science, and Université Châtenay Malabry

Subjects
Surface Properties, Characterization, Pharmaceutical Science, Nanoparticle, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Capillary electrophoresis, Adsorption, [CHIM.ANAL]Chemical Sciences/Analytical chemistry, Surface coverage, Surface charge, Particle Size, Chemistry, Electrophoresis, Capillary, Proteins, General Medicine, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Characterization (materials science), Molecular Weight, Nanomedicine, [SDV.SP.PG]Life Sciences [q-bio]/Pharmaceutical sciences/Galenic pharmacology, Nanoparticles, Molecular probes, 0210 nano-technology, Molecular probe, Biotechnology, Macromolecule
Abstract

International audience; A faithful characterization of nanomedicine (NM) is needed for a better understanding of their in vivo outcomes. Size and surface charge are studied with well-established methods. However, other relevant parameters for the understanding of NM behavior in vivo remain largely inaccessible. For instance, the reactive surface of nanomedicines, which are often grafted with macromolecules to decrease their recognition by the immune system, is excluded from a systematic characterization. Yet, it is known that a subtle modification of NMs' surface characteristics (grafting density, molecular architecture and conformation of macromolecules) is at the root of major changes in the presence of biological components. In this work, a method that investigates the steric hindrance properties of the NMs’ surface coverage based on its capacity to exclude or allow adsorption of well-defined proteins was developed based on capillary electrophoresis. A series of proteins with different molecular weights (MW) were used as molecular probes to screen their adsorption behavior on nanoparticles bearing different molecular architectures at their surface. This novel strategy evaluating to some degree a functionality of NMs can bring additional information about their shell property and might allow for a better perception of their behavior in the presence of biological components. The developed method could discriminate nanoparticles with a high surface coverage excluding high MW proteins from nanoparticles with a low surface coverage that allowed high MW proteins to adsorb on their surface. The method has the potential for further standardization and automation for a routine use. It can be applied in quality control of NMs and to investigate interactions between proteins and NM in different situations.

Published
2018
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25. Material challenges for solar cells in the twenty-first century: directions in emerging technologies

Author

Ryo Tamaki, Naoya Miyashita, Tomofumi Hamamura, Nicolas Cavassilas, Nazmul Ahsan, Haibin Wang, Laurence Vignau, Ludmila Cojocaru, Thierry Toupance, Arnaud Etcheberry, Kentaro Watanabe, Daniel Suchet, Sylvain Chambon, Camille Geffroy, Maxime Giteau, Benoit Behaghel, Samy Almosni, Takaya Kubo, Katsuhisa Yoshida, Eric Cloutet, Zacharie Jehl, Laurent Lombez, Camille Ibrahim, Tomoyuki Inoue, Yoshiaki Nakano, Yasushi Shoji, M. Paire, Céline Olivier, Jean-François Guillemoles, Andrea Cattoni, Hiroshi Segawa, Damien Aureau, Georges Hadziioannou, Satoshi Uchida, Anatole Julian, Pierre Rale, Yoshitaka Okada, Masakazu Sugiyama, Stéphane Collin, Léa Tatry, François Gibelli, Muriel Bouttemy, Amaury Delamarre, University of Tokyo NextPV, Research Center for Advanced Science and Technology [Tokyo] (RCAST), The University of Tokyo, Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), Ecole Nationale Supérieure de Chimie de Paris- Chimie ParisTech-PSL (ENSCP)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), Institut des Sciences Moléculaires (ISM), Université Montesquieu - Bordeaux 4-Université Sciences et Technologies - Bordeaux 1-École Nationale Supérieure de Chimie et de Physique de Bordeaux (ENSCPB)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Chimie des Polymères Organiques (LCPO), Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Chimie des polymères organiques (LCPO), Université Sciences et Technologies - Bordeaux 1-École Nationale Supérieure de Chimie et de Physique de Bordeaux (ENSCPB)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris Diderot - Paris 7 (UPD7)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), EDF (EDF)-Air Liquide [Siège Social]-Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Ecole Nationale Supérieure de Chimie de Paris- Chimie ParisTech-PSL (ENSCP)-TOTAL FINA ELF, The University of Tokyo (UTokyo), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), Université Montesquieu - Bordeaux 4-Université Sciences et Technologies - Bordeaux 1 (UB)-École Nationale Supérieure de Chimie et de Physique de Bordeaux (ENSCPB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Sciences et Technologies - Bordeaux 1 (UB)-École Nationale Supérieure de Chimie et de Physique de Bordeaux (ENSCPB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), Université Montesquieu - Bordeaux 4-Université Sciences et Technologies - Bordeaux 1-École Nationale Supérieure de Chimie et de Physique de Bordeaux (ENSCPB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure de Chimie et de Physique de Bordeaux (ENSCPB)-Université Sciences et Technologies - Bordeaux 1-Institut de Chimie du CNRS (INC), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, energy conversion, 502 Electron spectroscopy, Emerging technologies, lcsh:Biotechnology, 02 engineering and technology, semiconductors, Energy transition, 010402 general chemistry, 7. Clean energy, 01 natural sciences, [SPI]Engineering Sciences [physics], Photovoltaics, lcsh:TP248.13-248.65, 209 Solar cell / Photovoltaics, lcsh:TA401-492, luminescence, [CHIM]Chemical Sciences, Energy transformation, General Materials Science, ComputingMilieux_MISCELLANEOUS, 206 Energy conversion / transport / storage / recovery, business.industry, Photovoltaic system, Twenty-First Century, 50 Energy Materials, 505 Optical / Molecular spectroscopy, 021001 nanoscience & nanotechnology, Engineering physics, 0104 chemical sciences, Focus on Overview of innovative materials for energy, 13. Climate action, efficiency, lcsh:Materials of engineering and construction. Mechanics of materials, Electricity, nanotechnologies, 0210 nano-technology, business, devices
Abstract

Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan–French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots.

Published
2018
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26. Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

Author

Fabrice Oehler, Frank Glas, Maria Tchernycheva, Hyun Gyu Song, Noelle Gogneau, Martina Morassi, Jean-Christophe Harmand, Laurent Travers, Yong-Hoon Cho, Ludovic Largeau, Francois H. Julien, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris Diderot - Paris 7 (UPD7)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Korea Advanced Institute of Science and Technology (KAIST), Laboratoire de Biotechnologie de l'Environnement [Narbonne] (LBE), Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro)-Institut National de la Recherche Agronomique (INRA), Department of Physics and Graduate School of Nanoscience and Technology, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut National de la Recherche Agronomique (INRA)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), and Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)

Subjects
Materials science, Nanowire, chemistry.chemical_element, Flux, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, General Materials Science, ComputingMilieux_MISCELLANEOUS, business.industry, Relaxation (NMR), Heterojunction, General Chemistry, Plasma, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, chemistry, Optoelectronics, 0210 nano-technology, business, Layer (electronics), Indium, Molecular beam epitaxy
Abstract

We investigate the growth mechanism of axially heterostructured InGaN/GaN nanowires (NWs) as a function of the flux conditions. The InGaN heterostructure morphology critically depends on the In/Ga flux ratio affecting the local V/III ratio at the NW growth front. Locally N-rich conditions are associated with tapered island-like morphologies, while metal-rich conditions, leading to the formation of a stable Indium adsorbed layer at the NW growth front, promote the growth of heterostructures with a disk-like shape. Based on experimental results and theoretical predictions, we demonstrate that this indium ad-layer acts as a surfactant inducing a modification of the InGaN heterostructure growth mode. The impact of flux conditions and strain relaxation on the Indium incorporation are also addressed. The resulting insertions present abrupt interfaces and a homogeneous In distribution for In contents up to 40%.

Published
2018
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27. Finite element modelling of non-faradic electric impedance spectroscopy through flexible polymer microchip

Author

Lila Chaal, Vincent Vivier, Mohammed Kechadi, Bernard Tribollet, Jean Gamby, Laboratoire d'Electrochimie, Corrosion et de Valorisation Energétique [Université de Béjaïa] (LECVE), Université Abderrahmane Mira [Béjaïa], Laboratoire Interfaces et Systèmes Electrochimiques (LISE), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
General Chemical Engineering, finite element method, Microfluidics, Analytical chemistry, 02 engineering and technology, Dielectric, flexible polymer, 01 natural sciences, Analytical Chemistry, Electrochemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical impedance, contactless, Capacitive coupling, Microchannel, business.industry, Chemistry, 010401 analytical chemistry, 021001 nanoscience & nanotechnology, Finite element method, 0104 chemical sciences, Dielectric spectroscopy, Microelectrode, non-faradic impedance, Optoelectronics, [CHIM.OTHE]Chemical Sciences/Other, 0210 nano-technology, business
Abstract

International audience; Numerical simulations using finite element method were performed for a better understanding of non-faradic electric impedance response of microfluidic device with two insulated planar-microband electrodes i.e. electrodes without direct contact with electrolyte flowing in the microchannel. The results showed that calculated electric impedance depends not only on the microchannel geometry and dielectric properties of electrolyte flowing in microchannel, but also on the dielectric response of the insulated PET layer. It was pointed out that a microfluidic device with insulated microelectrodes behaves as a dielectric device, in which a strong capacitive coupling effect takes place in the high-frequency domain. An analytical expression that allows predicting the optimal frequency range to be used for measuring real-time contactless microchannel resistance changes was proposed. This non-faradic impedance spectroscopy appears to be a promising approach for the new generation of sensors and biosensors in miniaturized flexible or patch polymer devices.

Published
2017
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28. High quality factor confined Tamm modes

Author

Symonds, C., Azzini, S., Lheureux, G., Piednoir, A., Benoit, J. M., Lemaitre, A., Senellart, P., Bellessa, J., Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], Science, [CHIM]Chemical Sciences, Physics::Optics, Medicine, Article, ComputingMilieux_MISCELLANEOUS
Abstract

We demonstrate that quality factors up to 5000 can be obtained in Tamm-like hybrid metal/semiconductor structures. To do this, a Bragg mirror is covered by a thin transparent layer and a metallic film. The reduced losses of these modes are related to an intermediate behavior between conventional Tamm plasmon and Bragg modes lying deeper in the semiconductor medium. One of the most striking features of this approach is that these super Tamm modes can still be spatially confined with the metal. Confinement on micrometric scale is experimentally demonstrated. The simplicity and versatility of high-Q mode control by metal structuration open perspectives for lasing and polaritonic applications.

Published
2017
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29. Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

Author

Carl H. Naylor, Mathieu G. Silly, Abdelkarim Ouerghi, Zeineb Ben Aziza, Yannick J. Dappe, Julien E. Rault, Adrian Balan, Hugo Henck, Debora Pierucci, Patrick Le Fèvre, François Bertran, A. T. Charlie Johnson, Fausto Sirotti, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Department of Physics and Astronomy [Philadelphia], University of Pennsylvania, Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Groupe Modélisation et Théorie (GMT), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, University of Pennsylvania [Philadelphia], Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Service de physique de l'état condensé (SPEC - UMR3680), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)

Subjects
spectroscopy, Materials science, Hydrogen, Photoemission spectroscopy, Analytical chemistry, FOS: Physical sciences, General Physics and Astronomy, chemistry.chemical_element, Angle-resolved photoemission spectroscopy, doping, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Condensed Matter - Strongly Correlated Electrons, n and p doped MoS 2, chemistry.chemical_compound, Monolayer, General Materials Science, Spectroscopy, Molybdenum disulfide, defects, atomic hydrogenation, [PHYS]Physics [physics], Condensed Matter - Materials Science, Strongly Correlated Electrons (cond-mat.str-el), Doping, General Engineering, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, 3. Good health, 0104 chemical sciences, chemistry, Chemical physics, electronic properties, Density functional theory, 0210 nano-technology
Abstract

Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2 flakes. The successful incorporation of hydrogen in MoS2 leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2 confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2 hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements., 15 pages, 6 figures + SI 3 pages 3 figures. Pre-print published with the authorization of ACS Publications

Published
2017
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30. Silicon chip-integrated fiber couplers with sub-decibel loss

Author

Daivid Fowler, Delphine Marris-Morini, Eric Cassan, Pavel Cheben, Frederic Boeuf, Sylvain Guerber, Charles Baudot, Diego Perez-Galacho, Daniel Benedikovic, Carlos Alonso-Ramos, Vladyslav Vakarin, Xavier Le Roux, Cecilia Dupre, Bertrand Szelag, Laurent Vivien, Guillaume Marcaud, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Institut d'électronique fondamentale (IEF), National Research Council of Canada (NRC), and European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015)

Subjects
Optical fiber, Materials science, Nanophotonics, Silicon on insulator, 02 engineering and technology, Integrated circuit, 01 natural sciences, Waveguide (optics), sub-wavelength grating metamaterials, law.invention, optical design, 010309 optics, deep-ultraviolet lithography, 020210 optoelectronics & photonics, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Stepper, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, fiber-chip optical interface, Silicon photonics, silicon photonics, business.industry, fiber couplers, complementary metal-oxide semiconductor technology, silicon, diffraction gratings, waveguides, surface grating couplers, metamaterials, immersion lithography, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, nanophotonics, Photonics, business
Abstract

Silicon nanophotonics represents a scalable route to deploy complex optical integrated circuits for multifold applications, markets, and end-users. Most recently, applications such as optical communications and interconnects, sensing, as well as quantum-based technologies, among others, present additional opportunities for integrated silicon nanophotonics to expand its frontiers from laboratories to industrial product development. Within a wide set of functionalities that silicon nanophotonic chips can afford, the availability of low-loss optical input/output interfaces has been regarded as a major practical obstacle that hampers long-term success of integrated photonic platforms. Indeed, fiber-chip interfaces based on diffraction gratings are an attractive solution to resonantly couple the light between planar waveguide circuits and standard single-mode optical fibers. Surface grating couplers provide much more alignment tolerance in fiber attach compared with most conventional edge-coupled alternatives, while retaining the much-needed control of the fiber placement on the chip surface and wafer-level-test capability that the in-plane convertors lack. Here, we report on our recent advances in the development of high-performance fiber-chip grating couplers that exploit the blazing effect. This is achieved with well-established dual-etch processing in interleaved teeth-trench arrangements or using L-shaped grating-teeth-profile geometries. The first demonstration of the L-shaped-based grating coupler yielded a coupling loss of -2.7 dB, seamlessly fabricated into a 300-mm foundry manufacturing process using 193-nm deep-ultraviolet stepper lithography. Moreover, silicon metamaterial L-shaped fiber couplers may promote robust sub-decibel coupling of light, reaching a simulated coupling loss of -0.25 dB, while featuring device layouts (>120 nm) compatible with lithographic technologies in silicon semiconductor foundries., SPIE OPTO 2020 - Smart Photonic and Optoelectronic Integrated Circuits XXII, February 3-6, 2020, San Francisco, California, Series: Proceedings of SPIE

Published
2020
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31. Mesoscopic limit cycles in coupled nanolasers

Author

Mathias Marconi, Si H. Pan, Ariel Levenson, Fabrice Raineri, Abdelkrim El Amili, Yeshaiahu Fainman, Julien Javaloyes, Alejandro M. Yacomotti, Institut Non Linéaire de Nice Sophia-Antipolis (INLN), Centre National de la Recherche Scientifique (CNRS)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), Department of Electrical Engineering - University of California, University of California [San Diego] (UC San Diego), University of California-University of California, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
General Physics and Astronomy, FOS: Physical sciences, 01 natural sciences, Noise (electronics), [SPI]Engineering Sciences [physics], Limit cycle, 0103 physical sciences, Spontaneous emission, Limit (mathematics), [NLIN]Nonlinear Sciences [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Quantum fluctuation, Physics, Mesoscopic physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Quantum Physics, Nonlinear Sciences - Chaotic Dynamics, Amplitude, Quantum electrodynamics, Thermodynamic limit, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Chaotic Dynamics (nlin.CD), Quantum Physics (quant-ph), Physics - Optics, Optics (physics.optics)
Abstract

Two coupled semiconductor nanolasers exhibit a mode switching transition, theoretically characterized by limit cycle $-$or mode-beating$-$ oscillations. Their decay rate is vanishingly small in the thermodynamic limit, i.e. when the spontaneous emission noise $\beta$-factor tends to zero. We provide experimental evidence of mesoscopic limit cycles $-$with $\sim 10^3$ intracavity photons$-$ through photon statistics measurements. We first show that the order parameter quantifying the limit cycle amplitude can be reconstructed from the mode intensity statistics. As a main result we observe a maximum of the averaged amplitude at the mode switching, accounting for limit cycle oscillations. We finally relate this maximum to a dip of mode cross-correlations, reaching a minimum of $g_{ij}^{(2)}=2/3$, which we show to be a mesoscopic limit. Coupled nanolasers are thus an appealing testbed for the investigation of spontaneous breaking of time-translation symmetry in presence of strong quantum fluctuations.

Published
2019
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32. Interfacing scalable photonic platforms: solid-state based multi-photon interference in a reconfigurable glass chip

Author

Niko Viggianiello, Loïc Lanco, G. Coppola, Roberto Osellame, Carlos Antón, A. Harouri, Pascale Senellart, Aristide Lemaître, H. Ollivier, J. C. Loredo, Fabio Sciarrino, Andrea Crespi, Isabelle Sagnes, N. Somaschi, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Dipartemento di Fisica, Politecnico - Milan, Center for Nanoscience and Nanotechnology, and C2N, CNRS - Université Paris-Sud, Université Paris-Saclay

Subjects
Photon, femtosecond laser writing, Computer science, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, FOS: Physical sciences, Physics::Optics, 02 engineering and technology, Quantum channel, 01 natural sciences, Waveguide (optics), GeneralLiterature_MISCELLANEOUS, Computer Science::Hardware Architecture, Interference (communication), [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], Single photon source, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 010306 general physics, ComputingMilieux_MISCELLANEOUS, Electronic circuit, integrated photonic circuits, ComputingMethodologies_COMPUTERGRAPHICS, [PHYS]Physics [physics], Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Quantum dot, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Quantum technology, Interfacing, Optoelectronics, Photonics, 0210 nano-technology, business, Quantum Physics (quant-ph)
Abstract

Scaling-up optical quantum technologies requires to combine highly efficient multi-photon sources and integrated waveguide components. Here, we interface these scalable platforms: a quantum dot based multi-photon source and a reconfigurable photonic chip on glass are combined to demonstrate high-rate three-photon interference. The temporal train of single-photons obtained from a quantum emitter is actively demultiplexed to generate a 3.8 kHz three-photon source, which is then sent to the input of a tuneable tritter circuit, demonstrating the on-chip quantum interference of three indistinguishable single-photons. Pseudo number-resolving photon detection characterising the output distribution shows that this first combination of scalable sources and reconfigurable photonic circuits compares favourably in performance with respect to previous implementations. A detailed loss-budget shows that merging solid-state based multi-photon sources and reconfigurable photonic chips could allow ten-photon experiments on chip at ${\sim}40$ Hz rate in a foreseeable future., Comment: 7 pages, 4 figures, 2 tables

Published
2019
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33. Charge transfer and band gap opening of a ferrocene/graphene heterostructure

Author

Anne-Marie Haghiri-Gosnet, Hafsa Korri-Youssoufi, Azzedine Bendounan, Bacem Zribi, Abdelkarim Ouerghi, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Equipe de Chimie Bioorganique et Bioinorganique, Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)

Subjects
Materials science, Band gap, 02 engineering and technology, 010402 general chemistry, Photochemistry, 01 natural sciences, law.invention, Nanomaterials, Electron transfer, chemistry.chemical_compound, symbols.namesake, law, Heterostructures, General Materials Science, Spectroscopy, Graphene, [CHIM.ORGA]Chemical Sciences/Organic chemistry, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Dielectric spectroscopy, Electrochemical Patterning, [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry, Ferrocene, chemistry, symbols, Cyclic voltammetry, 0210 nano-technology, Raman spectroscopy
Abstract

International audience; The objective of this paper was to study the electrochemical and electronic behavior of pristine graphene used as a catalyst for redox reactions and the charge transport mechanisms that occur in the interface between graphene and covalently attached ferrocene. The covalent grafting and chemical modification of epitaxial graphene by a ferrocene redox marker was performed through electrochemical oxidation of ethylene diamine that provided a low coverage density and a short distance between the ferrocene and graphene. The electrochemical activity, as well as, the electronic and structural properties of the nanomaterials were characterized by Cyclic Voltammetry, Electrochemical Impedance Spectroscopy, X-ray Photoelectron Spectroscopy , RAMAN spectroscopies and Angle-Resolved-Photoelectron Spectroscopy. We show that the proposed modification improved the electronic properties of graphene where p-doping was observed and a band gap opening of about 60 meV was demonstrated. The electrochemical activity and electron transfer ability was inproved. A heterogeneous electron transfer rate of K S =7 s-1 , was obtained thanks to a low density of immobilzed ferrocene and the small spacer provided by ethylene diamine giving a fast tunneling electron transfer. We believe promising perspectives for the development of self-organized graphene electrodes with various electrochemical properties by tailoring the attached redox functional groups.

Published
2019
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34. Linearity and Efficiency Characterization of AlGaN/GaN and InAlGaN/GaN HEMTs devices using Multi-tone Large Signal Measurements

Author

Stéphane Piotrowicz, Mohamed Bouslama, C. Potier, Christophe Chang, Vincent Gillet, O. Patard, J-C. Nallatamby, Raymond Quéré, Michel Prigent, Laboratoire matériaux ENSET d'Oran, ENSET [Oran], ENSET [Oran]-ENSET [Oran], Alcatel-Thalès, Marcoussis (91), Courant Institute of Mathematical Sciences [New York] (CIMS), New York University [New York] (NYU), NYU System (NYU)-NYU System (NYU), Equipe SAPHIHR (LNC - U1231), Lipides - Nutrition - Cancer [Dijon - U1231] (LNC), and Université de Bourgogne (UB)-AgroSup Dijon - Institut National Supérieur des Sciences Agronomiques, de l'Alimentation et de l'Environnement-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Bourgogne (UB)-AgroSup Dijon - Institut National Supérieur des Sciences Agronomiques, de l'Alimentation et de l'Environnement-Institut National de la Santé et de la Recherche Médicale (INSERM)

Subjects
Materials science, business.industry, 020208 electrical & electronic engineering, Transistor, Linearity, 020206 networking & telecommunications, 02 engineering and technology, High-electron-mobility transistor, Signal, law.invention, [SPI]Engineering Sciences [physics], Third order, law, Modulation, 0202 electrical engineering, electronic engineering, information engineering, Demodulation, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS, Intermodulation
Abstract

In this paper, the linearity and efficiency of 2 different technologies of HEMT transistors (AlGaN/GaN and InAlGaN/GaN) has been performed using multi-tone large signal measurement in C-band. The transistors size is 8x50µm with 0.15µm gate length. This nonlinear characterization has been carried out using a multi-tone signal with a particularly property: it doesn't exist overlapping between the signal tones and all the third order intermodulation products (IM3) allowing to measure the C/I characteristic in few milliseconds. Moreover, the statistical properties of this signal (probability density function -PDF, Peak to Average Power Ratio -PAPR, …) can mimic those of complex modulation signals used in telecommunications (QAM, OFDM, …). To do that an Unequally Spaced Multi-Tone (USMT) test signal is generated by means of IQ modulated synthesiser. Note that the great interest of this signal is the lack of demodulator at reception which simplifies the C/I measurement. After measuring the DC characteristic of each device (IV, PIV, current leakage), the C/I, PAE, Gain and low frequency drain current of these HEMT transistor will be performed with a load-pull setup to reach the optimum load in terms of PAE.

Published
2019
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35. Comb-based WDM transmission at 10 Tbit/s using a DC-driven quantum-dash mode-locked laser diode

Author

Juned N. Kemal, Stefan Wolf, Wolfgang Freude, Christian Koos, Kamel Merghem, P. Trocha, Francois Lelarge, Pablo Marin-Palomo, Abderrahim Ramdane, Sebastian Randel, Karlsruhe Institute of Technology (KIT), Institut Polytechnique de Paris (IP Paris), Département Electronique et Physique (EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Traitement de l'Information Pour Images et Communications (TIPIC-SAMOVAR), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)-Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Centre National de la Recherche Scientifique (CNRS), Almae Technologies, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Signal Processing (eess.SP), Computer science, Comb generator, FOS: Physical sciences, 02 engineering and technology, Polarization-division multiplexing, 01 natural sciences, Multiplexing, law.invention, 010309 optics, Frequency comb, Optics, law, Wavelength-division multiplexing, 0103 physical sciences, Phase noise, Electronic engineering, FOS: Electrical engineering, electronic engineering, information engineering, Electrical Engineering and Systems Science - Signal Processing, Diode, Laser diode, business.industry, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Quadrature (mathematics), Transmission (telecommunications), Modulation, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Terabit, Transceiver, 0210 nano-technology, business, Quadrature amplitude modulation, Data transmission, Phase-shift keying, Optics (physics.optics), Physics - Optics
Abstract

International audience; Chip-scale frequency comb generators have the potential to become key building blocks of compact wavelength-division multiplexing (WDM) transceivers in future metropolitan or campus-area networks. Among the various comb generator concepts, quantum-dash (QD) mode-locked laser diodes (MLLD) stand out as a particularly promising option, combining small footprint with simple operation by a DC current and offering flat broadband comb spectra. However, the data transmission performance achieved with QD-MLLD was so far limited by strong phase noise of the individual comb tones, restricting experiments to rather simple modulation formats such as quadrature phase shift keying (QPSK) or requiring hardware-based compensation schemes. Here we demonstrate that these limitations can be overcome by digital symbol-wise blind phase search (BPS) techniques, avoiding any hardware-based phase-noise compensation. We demonstrate 16QAM dual-polarization WDM transmission on 38 channels at an aggregate net data rate of 10.68 Tbit/s over 75 km of standard single-mode fiber. To the best of our knowledge, this corresponds to the highest data rate achieved through a DC-driven chip-scale comb generator without any hardware-based phase-noise reduction schemes.

Published
2019
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36. Sub-decibel silicon grating couplers based on L-shaped waveguides and engineered subwavelength metamaterials

Author

Daivid Fowler, Sylvain Guerber, Charles Baudot, Carlos Alonso-Ramos, Eric Cassan, Delphine Marris-Morini, Cecilia Dupre, Bertrand Szelag, Frederic Boeuf, Xavier Le Roux, Daniel Benedikovic, Laurent Vivien, Pavel Cheben, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Institut d'électronique fondamentale (IEF), National Research Council of Canada (NRC), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), and European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015)

Subjects
Coupling, Optical fiber, Materials science, business.industry, Nanophotonics, Metamaterial, 02 engineering and technology, Grating, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, 010309 optics, Laser linewidth, Optics, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Diffraction grating, Waveguide
Abstract

International audience; The availability of low-loss optical interfaces to couple light between standard optical fibers and high-index-contrast silicon waveguides is essential for the development of chip-integrated nanophotonics. Input and output couplers based on diffraction gratings are attractive coupling solutions. Advanced grating coupler designs, with Bragg or metal mirror underneath, low-and high-index overlays, and multi-level or multi-layer layouts, have proven less useful due to customized or complex fabrication, however. In this work, we propose a rather simpler in design of efficient off-chip fiber couplers that provide a simulated efficiency up to 95% (−0.25 dB) at a wavelength of 1.55 µm. These grating couplers are formed with an L-shaped waveguide profile and synthesized subwavelength grating metamaterials. This concept jointly provides sufficient degrees of freedom to simultaneously control the grating directionality and out-radiated field profile of the grating mode. The proposed chip-to-fiber couplers promote robust sub-decibel coupling of light, yet contain device dimensions (> 120 nm) compatible with standard lithographic technologies presently available in silicon nanophotonic foundries. Fabrication imperfections are also investigated. Dimensional offsets of ± 15 nm in shallow-etch depth and ± 10 nm in linewidth's and mask misalignments are tolerated for a 1-dB loss penalty. The proposed concept is meant to be universal, which is an essential prerequisite for developing reliable and low-cost optical couplers. We foresee that the work on L-shaped grating couplers with sub-decibel coupling efficiencies could also be a valuable direction for silicon chip interfacing in integrated nanophotonics.

Published
2019
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37. Development of high-speed, patch-antenna intersubband photodetectors at 10.3μm

Author

Q. Lin, Huixiang Li, Emilien Peytavit, S. Barbieri, M. Hakl, S. Pirotta, J-F. Lampin, Jun-Peng Cao, Raffaele Colombelli, Wenjian Wan, University of Lille, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre National de la Recherche Scientifique (CNRS), Key Laboratory of terahertz solid state technology, Chinese Academy of Sciences [Beijing] (CAS), Key laboratory of terahertz solid state technology, Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
0301 basic medicine, Terahertz radiation, Photoconductivity, Photodetector, Physics::Optics, Quantum cascade lasers, 02 engineering and technology, 03 medical and health sciences, Resonator, Wavelength measurement, Resonators, Patch antenna, Physics, Photocurrent, Temperature measurement, business.industry, Detector, Finite-difference time-domain method, Photodetectors, Detectors, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 030104 developmental biology, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Microwave
Abstract

International audience; We present our work on the development of highspeed, GaAs-AlGaAs multi-quantum wells photodetectors at 10.3μm, based on two-dimensional arrays of patch-antenna resonators. First, the results of FDTD simulations will be presented that allowed to optimize the patch array geometry and fabricate a first generation of detectors with microwave coplanar access. Next, we will report on our initial results from dc optical characterization, namely reflectivity and photocurrent measurements.

Published
2019
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38. GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

Author

Maria Tchernycheva, Xavier Lafosse, Jean-Christophe Harmand, Laurent Travers, Martina Morassi, Ludovic Largeau, O. Mauguin, Noelle Gogneau, Quang Chieu Bui, Christophe Dupuis, Nikoletta Jegenyes, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Faculté polytechnique de Mons, Université de Mons (UMons), Laboratoire de Biotechnologie de l'Environnement [Narbonne] (LBE), Institut National de la Recherche Agronomique (INRA)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Université Paris Diderot - Paris 7 (UPD7)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro)-Institut National de la Recherche Agronomique (INRA)

Subjects
Materials science, Nanowire, Shell (structure), Oxide, Ga2O3, 02 engineering and technology, Epitaxy, 01 natural sciences, 7. Clean energy, lcsh:Technology, [SPI.MAT]Engineering Sciences [physics]/Materials, GaN, lcsh:Chemistry, chemistry.chemical_compound, Phase (matter), 0103 physical sciences, General Materials Science, Ga 2 O 3, Instrumentation, lcsh:QH301-705.5, core/shell nanowires, 010302 applied physics, Fluid Flow and Transfer Processes, Thermal oxidation, business.industry, lcsh:T, Process Chemistry and Technology, General Engineering, 021001 nanoscience & nanotechnology, lcsh:QC1-999, Computer Science Applications, Active layer, chemistry, lcsh:Biology (General), lcsh:QD1-999, metal-oxide semiconductor, lcsh:TA1-2040, gas sensor devices, Optoelectronics, 0210 nano-technology, business, lcsh:Engineering (General). Civil engineering (General), lcsh:Physics, Molecular beam epitaxy
Abstract

The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the &beta, Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core.

Published
2019
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39. Third Order Dispersion in Time-Delayed Systems

Author

Mathias Marconi, Massimo Giudici, Svetlana V. Gurevich, Isabelle Sagnes, Arnaud Garnache, P. Camelin, Julien Javaloyes, Grégoire Beaudoin, Guillaume Huyet, C. Schelte, NSF Center for EUV Science and Technology, NSF, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Dipartimento di Scienze della Terra 'Ardito Desio', Università degli Studi di Milano [Milano] (UNIMI), Institut Mediterrani d'Estudis Avancats (IMEDEA), and Consejo Superior de Investigaciones Científicas [Madrid] (CSIC)-Universidad de las Islas Baleares (UIB)

Subjects
Physics, Pointwise, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Dynamical systems theory, General Physics and Astronomy, Pattern formation, 01 natural sciences, Pulse (physics), Nonlinear system, Classical mechanics, Time delayed, 0103 physical sciences, Dispersion (optics), 010306 general physics, Third order dispersion, ComputingMilieux_MISCELLANEOUS
Abstract

Time-delayed dynamical systems materialize in situations where distant, pointwise, nonlinear nodes exchange information that propagates at a finite speed. However, they are considered devoid of dispersive effects, which are known to play a leading role in pattern formation and wave dynamics. We show how dispersion may appear naturally in delayed systems and we exemplify our result by studying theoretically and experimentally the influence of third order dispersion in a system composed of coupled optical microcavities. Dispersion-induced pulse satellites emerge asymmetrically and destabilize the mode-locking regime.

Published
2019
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40. Coupling quasi-phase-matching: Entanglement buildup in χ ( 2 ) nonlinear-waveguide arrays

Author

Barral, David, Belabas, Nadia, Bencheikh, Kamel, Levenson, Juan Ariel, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019
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41. AFM Measurements of the Deformation Kinetics of Silica Oxide Dots Deposited on a Sequentially Nitrided Stainless Steel

Author

Franck Cleymand, Thierry Czerwiec, G. Marcos, Stéphane Guilet, Feriel Laourine, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), and Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Atomic force microscopy, Mechanical Engineering, Kinetics, Oxide, 02 engineering and technology, Plasma, engineering.material, Deformation (meteorology), 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry.chemical_compound, chemistry, Mechanics of Materials, 0103 physical sciences, engineering, General Materials Science, Austenitic stainless steel, Composite material, 0210 nano-technology, Nitriding, ComputingMilieux_MISCELLANEOUS
Abstract

In this paper, we present the results of plasma nitriding treatments on austenitic stainless steel substrates previously coated with a patterned silicon oxide layer. For this purpose, masks were made by PECVD for the deposition of a silicon oxide layer on polished austenitic AISI 316L samples. For the final nitriding treatment, we used a multi-dipolar plasma providing independent substrate polarization. The interactions between expanded austenite and fixed silicon oxide mask in different shapes (circular and square dots) are observed by atomic force microscopy (AFM) on the same area before and after the nitriding treatment. After this thermochemical treatment, we obtain strong distortions of the dots, in particular at the edges of the larger size dots. The role of elastic deformation, due to the expanded austenitic phase formed by the diffusion of nitrogen under the mask is of primary importance.

Published
2019
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42. Electro-optical analysis of 30% InGaN/GaN MQW LED devices

Author

Bozkurt, Kutsal, Özdemir, Orhan, Kuruoğlu, Neslihan Ayarci, Alshehri, Bandar, Dogheche, Karim, Gaimard, Quentin, Ramdane, Abderrahim, Dogheche, El Hadj, Yildiz Technical University (YTU), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Optoélectronique - IEMN (OPTO - IEMN)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

43. Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

Author

Yacine Halfaya, Xin Li, Taha Ayari, Suresh Sundaram, Chris Bishop, Jean-Paul Salvestrini, Abdallah Ougazzaden, Simon Gautier, Gilles Patriarche, Saiful Alam, Paul L. Voss, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, business.industry, Mechanical Engineering, 02 engineering and technology, Substrate (electronics), Nitride, 010402 general chemistry, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, 0104 chemical sciences, symbols.namesake, chemistry.chemical_compound, chemistry, Mechanics of Materials, Boron nitride, symbols, Sapphire, Optoelectronics, Nanorod, Metalorganic vapour phase epitaxy, van der Waals force, 0210 nano-technology, business
Abstract

International audience; Hexagonal boron nitride (h‐BN) is a promising 2D template that decouples substrate effects from the layer above it by van der Waals epitaxy, because there are only weak forces out of the h‐BN. It also permits convenient mechanical transfer of devices grown on their surface to an appropriate substrate. Here, van der Waals epitaxial growth resulting in the formation of self‐organized GaN nanorods on h‐BN templates is demonstrated. This approach to the growth of III‐N nanostructures avoids transfer processes and scaling issues seen with other 2D materials, since both the 1D (GaN nanorods) and 2D (h‐BN) are grown at the wafer‐scale and in one growth run. Further, this process is used to grow vertical core–shell p‐GaN/InGaN/n‐GaN nano‐PIN device structures on wafer‐scale 2D h‐BN on sapphire and silicon substrates. The high quality of the core–shell nanostructures is confirmed by detailed electron microscopy study, which gives more insight into the nanorod formation mechanism on 2D material. Mechanical transfer of nanostructures on sapphire substrates to copper tape is then demonstrated, with no resulting damage of nanorods. Use of MOVPE grown large‐area h‐BN to realize nanostructures is a significant advancement and can lead to new nanodevice architectures needed for next‐generation optoelectronic devices.

Published
2019
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44. Photonic crystal nanobeam cavities with optical resonances around 800 nm

Author

Kamel Bencheikh, Fabrice Raineri, Alberto Bramati, I. Saber, Rajiv Boddeda, Juan Ariel Levenson, Grégoire Beaudoin, Isabelle Sagnes, Dorian Sanchez, Quentin Glorieux, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Kastler Brossel (LKB (Jussieu)), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique Quantique et Systèmes Dynamiques, Departement de Physique, and Université Ferhat-Abbas Sétif 1 [Sétif] (UFAS1)

Subjects
Fabrication, Materials science, chemistry.chemical_element, FOS: Physical sciences, Applied Physics (physics.app-ph), 01 natural sciences, Rubidium, 010309 optics, Indium gallium phosphide, chemistry.chemical_compound, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, Photonic crystal, [PHYS]Physics [physics], Argon, business.industry, Cavity quantum electrodynamics, Statistical and Nonlinear Physics, Physics - Applied Physics, Atomic and Molecular Physics, and Optics, chemistry, Q factor, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business, Refractive index, Physics - Optics, Optics (physics.optics)
Abstract

We report on the design and the fabrication of 1D photonic crystal (PhC) nanobeam cavities with optical resonances around 800 nm, compatible with Rubidium, Cesium or Argon atomic transitions. The cavities are made of Indium Gallium Phosphide (InGaP) material, a III-V semi-conductor compound which has a large index of refraction ($n \simeq 3.3$) favoring strong optical confinement and small mode volumes. Nanobeam cavities with inline and side coupling have been designed and fabricated, and quality factors up to $2\times 10^4$ have been measured.

Published
2019
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45. Electrodynamic resonance of surface conduction and THz transmission through arrays of rectangular apertures in opaque metallic thin films

Author

Christophe Minot, Edmond Cambril, Frédéric Garet, Jean-Louis Coutaz, Christophe Dupuis, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire de Microstructures et de Microélectronique (L2M), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Diffraction, Materials science, Admittance, Guided-mode resonance, business.industry, Surface plasmon, Physics::Optics, Resonance, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, 010309 optics, symbols.namesake, Optics, 0103 physical sciences, Transmittance, symbols, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Computer Vision and Pattern Recognition, Thin film, Rayleigh scattering, business, ComputingMilieux_MISCELLANEOUS
Abstract

A modal method is developed analytically to investigate the THz optical transmission and reflection of a metallic thin film perforated by a 2D array of rectangular apertures. For subwavelength apertures, this optical model is interpreted in terms of passive electrical circuits, with interface admittances accounting for the THz surface conduction properties of the metallic film. The reactive component of the admittance of the evanescent diffraction cloud is shown to exhibit resonant behavior governed by the shape factors of the array. Interaction of such an electrodynamic resonance with the Rayleigh diffraction orders may alter their standard Fano profiles. Experimental evidence of the resonance is obtained owing to lineshape analysis of transmittance measurements in the THz range on metallic thin films deposited on a dielectric substrate, both above and below the first Wood-Rayleigh anomaly.

Published
2019
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46. Design and Fabrication of Micro LEDs for High Data Rate LiFi Communications

Author

A. Ramdane, Elhadj Dogheche, Karim Dogheche, Bandar Alshehri, Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Optoélectronique - IEMN (OPTO - IEMN), and Renatech Network

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], Fabrication, Materials science, business.industry, Order (ring theory), Gallium nitride, III-nitrides, Capacitance, Cutoff frequency, Photodiode, law.invention, chemistry.chemical_compound, chemistry, Etching (microfabrication), law, frequency, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, devices fabrication, Photolithography, business, LiFi
Abstract

In this research, we have investigated P-I-N structures based on InGaN/GaN materials suitable for different size and adapted to the requirements of device characterization. The fabrication has been performed using different designs. Besides, the optimization of the fabrication process has been performed for multi scaled device fabrication (ranging from ${5}\times 5\ \mu \mathrm{m}^{2}$ to $100\times 100\ \mu \mathrm{m}^{{2}})$ in terms of photolithography, etching, metal deposition and passivation. We have considered $\mu$ , -photodiodes with planar and vertical configurations. Design and fabrication of specific coplanar RF electrical transmission lines have been performed in order to reduce the influence of parasitic capacitances. We have therefore evaluated the size effect on capacitance which affects the speed of the devices, and consequently the cut-off frequency. The reported cut-off frequency @ −3dB has been evaluated as 1.5 GHz for a diameter of $25\mu \mathrm{m}$ . This result indicates a potential response for LiFi needs as a part of optical wireless secured communication technology.

Published
2019
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47. Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Author

Maria Tchernycheva, Ludovic Largeau, C. Sinito, Laurent Travers, Fabrice Oehler, Antonella Cavanna, Ali Madouri, Francois H. Julien, A. V. Babichev, Hyun Gyu Song, Martina Morassi, Oliver Brandt, Lutz Geelhaar, Nan Guan, Yong-Hoon Cho, Joanna Njeim, Camille Barbier, Lorenzo Mancini, Noelle Gogneau, J.C. Harmand, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Paul-Drude-Institut für Festkörperelektronik (PDI), Korea Advanced Institute of Science and Technology (KAIST), Laboratoire d'Electronique et Electromagnétisme (L2E), Sorbonne Université (SU), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), ITMO University [Russia], Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)

Subjects
Materials science, Photoluminescence, Nanowire, Bioengineering, 02 engineering and technology, Chemical vapor deposition, 010402 general chemistry, Epitaxy, 01 natural sciences, law.invention, law, General Materials Science, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, business.industry, Graphene, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Blueshift, Surface coating, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Molecular beam epitaxy
Abstract

Optical properties of GaN nanowires (NWs) grown on chemical vapor deposited-graphene transferred on an amorphous support are reported. The growth temperature was optimized to achieve a high NW density with a perfect selectivity with respect to a SiO2 surface. The growth temperature window was found to be rather narrow (815°C ± 5°C). Steady-state and time-resolved photoluminescence from GaN NWs grown on graphene was compared with the results for GaN NWs grown on conventional substrates within the same molecular beam epitaxy reactor showing a comparable optical quality for different substrates. Growth at temperatures above 820 °C led to a strong NW density reduction accompanied with a diameter narrowing. This morphology change leads to a spectral blueshift of the donor-bound exciton emission line due to either surface stress or dielectric confinement. Graphene multi-layered micro-domains were explored as a way to arrange GaN NWs in a hollow hexagonal pattern. The NWs grown on these domains show a luminescence spectral linewidth as low as 0.28 meV (close to the set-up resolution limit).

Published
2019
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48. Epitaxial Lift-Off of Ultrathin Heterostructures for Hot-Carrier Solar Cell Applications

Author

Jean-François Guillemoles, Maxime Giteau, Yoshitaka Okada, Masakazu Sugiyama, Andrea Cattoni, Naoya Miyashita, Stéphane Collin, Kentaroh Watanabe, Hassanet Sodabanlu, University of Tokyo NextPV, Research Center for Advanced Science and Technology [Tokyo] (RCAST), The University of Tokyo (UTokyo), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], and Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)

Subjects
Materials science, Photoluminescence, business.industry, Heterojunction, Electron, Trapping, Lower intensity, Epitaxy, 7. Clean energy, law.invention, Lift (force), law, Solar cell, Optoelectronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

Epitaxial lift-off, the separation of a device from its growth substrate through selective etching, is economically attractive for all III-V solar cells, enabling the reuse of the same substrate multiple times. It is even more interesting for ultrathin solar cells, where substrate removal is needed to implement light trapping. One promising example of ultrathin cells is the hot-carrier solar cell, a high-efficiency concept where the photo-generated electrons are at a higher temperature than the lattice. Our work focuses on these hot carriers, and the necessity for light trapping to develop high-efficiency hot-carrier solar cells. In this presentation, we report on the epitaxial lift-off of ultrathin GaAs-AlGaAs heterostructures. We bond these devices on gold, and separate them from their substrate using HCl to selectively etch an InAlP release layer. This method could be applied to all heterostructures that do not contain InP-based compounds. The photoluminescence spectrum is very similar before and after epitaxial lift-off, with a lower intensity we are working on improving. Our objective is to observe hot carriers in these devices. This would enable to study the influence of light trapping on hot carriers, and to implement these results into complete hot-carrier solar cells.

Published
2019
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49. Guides d'onde SIW sur interposeur polymère pour applications millimétriques

Author

Acri, Giuseppe, Podevin, Florence, Pistono, Emmanuel, Ferrari, Philippe, Boccia, Luigi, Grimault-Jacquin, A. S., Zerounian, N., Aniel, Frédéric, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Elettronica e Sistemistica, Dip. Ingegneria Informatica Modellistica, Università della Calabria, Arcavacata di Rende, Italy, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Institut d'électronique fondamentale (IEF)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

50. Technologie InAlGaN/GaN/SiC à faibles effets mémoires délivrant 10W/mm à 30 GHz

Author

Piotrowicz, Stéphane, Patard, O., Gamarra, P., Potier, Clément, Chartier, E., Dua, C., Jacquet, J.C., Lacam, M., Michel, N., Nallatamby, Jean-Christophe, Ouali, M., ALTUNTAS, P., Prigent, Michel, Delage, Sylvain, Alcatel-Thales III-V Lab (III-V Lab), THALES, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Alcatel-Thalès, Marcoussis (91), Systèmes RF (XLIM-SRF), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2019

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