1. High-k Dielectrics and Metal Gates for Future Generation Memory Devices
- Author
-
Kittl, Jorge A., primary, Opsomer, Karl, additional, Popovici, M, additional, Menou, N., additional, Kaczer, Ben, additional, Wang, X. P., additional, Adelmann, C., additional, Pawlak, M. A., additional, Tomida, K., additional, Rothschild, Aude, additional, Govoreanu, Bogdan, additional, Degraeve, R., additional, Schaekers, M., additional, Zahid, M, additional, Delabie, A., additional, Meersschaut, J., additional, Polspoel, W., additional, Clima, Sergiu, additional, Pourtois, Geoffrey, additional, Knaepen, W., additional, Detavernier, Christophe, additional, Afanas'ev, Valery, additional, Blomberg, T., additional, Pierreux, D., additional, Swerts, J., additional, Fischer, P., additional, Maes, J. W., additional, Manger, D., additional, Vandervorst, Wilfried, additional, Conrad, T., additional, Franquet, A., additional, Favia, P., additional, Bender, Hugo, additional, Brijs, B., additional, Van Elshocht, S., additional, Jurczak, Malgorzata, additional, Van Houdt, J., additional, and Wouters, Dirk J., additional
- Published
- 2019
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