1. Enhanced thermoelectric properties of nanostructured Si by excess P-doping.
- Author
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Ashida, Yuichi, Ishii, Tomonori, Ichikawa, Satoshi, Fujieda, Shun, Muta, Hiroaki, and Ohishi, Yuji
- Subjects
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THERMOELECTRIC materials , *PLASMA chemistry , *NANOSILICON , *THERMAL conductivity , *TRANSMISSION electron microscopy , *DOPING agents (Chemistry) , *BALL mills - Abstract
In this study, nanostructures were introduced into bulk Si, and the P content in Si was increased. Arc melting, ball milling, and spark plasma sintering were used to prepare excess P-doped Si samples (Si1−xPx, x = 0.01, 0.03, 0.06, 0.09, and 0.12). In Si0.94P0.06, thermal conductivity decreased to 18 W m−1 K−1 at room temperature, which is about 10% of that of bulk Si. Transmission electron microscopy observation of Si0.94P0.06 revealed a linearly localized alignment, in addition to the nanostructures observed in the previous studies of P-doped Si samples. Linear alignments were composed of Si-P nanoprecipitates and defects linearly localized around dislocations. These sub-microstructures can reduce thermal conductivity; as a result, ZT at 973 K increased to 0.43, which is approximately three times higher than that of single-crystal Si. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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