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The emission centers and excited state characteristics of silica glasses implanted with Gd ions were studied by time-resolved pulsed cathodoluminescence. It was found that in the process of ion implantation, two types of new emission centers associated with Gd ions as well as Si quantum dots are formed in glassy silica. The distributions of excited states over the lifetime were found for both new centers and Si quantum dots. The nature of dispersion of the emission decay time was discussed in terms of structural disorder in the matrix. Thermal annealing and an increase in the ion fluence lead to the stimulation of the formation of Gd-related new centers and Si quantum dots. The micromechanisms for the formation of new Gd-related centers and two types of Si quantum dots were proposed on the basis of two scenarios for the introduction of Gd ions into the SiO 2 network: insertion of Gd into interstitial voids near oxygen-deficient centers and Gd  →  Si substitution with subsequent expulsion of Si atoms to the interstitial voids. New emission oxygen-deficient centers and quantum dots created by ion-beam technology in silica glasses are of interest for the development of new functional materials for photonics, and micro- and opto-electronics.

X-ray and optical spectroscopies were applied in order to study the band structure and electronic excitations of the SiO x /R y  O z (R  =  Si, Al, Zr) suboxide superlattices. The complementary x-ray emission and absorption measurements allow for the band gap values for the SiO x layers to be established, which are found to have almost no dependency on the cation type R. It is determined that, after annealing, the stoichiometric factor x remains near 1.8 in all the systems under study, implying that the silicon quantum dot synthesis reaction is not fully completed. It is shown that the SiO x /Al 2 O 3 multilayer contains octahedral structural motifs (SiO 6 ) usually found in stishovite, whereas SiO x /SiO 2 and SiO x /ZrO 2 demonstrate an electronic structure similar to conventional silica. The intrinsic electronic excited states are examined by means of synchrotron-excited photoluminescence spectroscopy. Low-energy UV-excited luminescence of SiO x layers is found to have the same spectrum in all of the studied structures, while VUV-excited spectra strongly depend on the cation R. In these measurements, manifestations of 'slow' exciton-mediated and 'fast' defect-related luminescence are distinguished using nanosecond time resolution. It is shown that both mobile and bounded excitons appear in the suboxide layer under 6.2 eV and 5.8 eV irradiation and then relax radiatively through the triplet-singlet transition of the neighbouring oxygen-deficient centers. The complete picture of the optical excitation and relaxation processes in these materials is illustrated in a general diagram depicting electronic states.

Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaO x films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaO x by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaO x conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaO x films is phonon-assisted tunneling between the traps.