377 results on '"Radu, Iuliana"'
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2. Low charge noise quantum dots with industrial CMOS manufacturing
3. Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
4. How to Report and Benchmark Emerging Field-Effect Transistors
5. The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors.
6. First experimental demonstration of a scalable linear majority gate based on spin waves
7. High mobility SiMOSFETs fabricated in a full 300mm CMOS process
8. Electrical spin-wave spectroscopy in nanoscale waveguides with nonuniform magnetization
9. Magnonic band structure in vertical meander-shaped CoFeB thin films
10. Reconfigurable sub-micron spin-wave majority gate with electrical transducers
11. Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification
12. Device Engineering and Benefit Maximization for Advanced Cryo-CMOS
13. Contact Optimization Through Annealing and Edge Functionalization Towards 2D TMD Nanosheet Devices
14. Spin wave emission by spin-orbit torque antennas
15. Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computation
16. Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices
17. Strain coupling optimization in magnetoelectric transducers
18. Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides
19. Antimony–Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel.
20. Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors.
21. Non-volatile spin wave majority gate at the nanoscale
22. Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the DIT(E) profile
23. Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs
24. Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping
25. Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel
26. High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies
27. Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact
28. High-performance monolayer MoS2 nanosheet GAA transistor
29. All electrical propagating spin wave spectroscopy with broadband wavevector capability
30. High-performance monolayer MoS2 nanosheet GAA transistor.
31. Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors.
32. Impact of device scaling on the electrical properties of MoS2 field-effect transistors
33. Author Correction: How to report and benchmark emerging field-effect transistors
34. Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors
35. Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current
36. Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array.
37. Validation of the CRAFITY score in patients with hepatocellular carcinoma treated with atezolizumab and bevacizumab
38. Analytical Modeling of Source-to-Drain Tunneling Current Down to Cryogenic Temperatures
39. Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction
40. Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors
41. Doping of graphene for the application in nano-interconnect
42. Evaluation of multilayer graphene for advanced interconnects
43. High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping.
44. Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current.
45. Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS$_{\text{2}}$ Channel Transistors
46. Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe$_{\text{2}}$ P-Type Field-Effect Transistors
47. Low charge noise quantum dots with industrial CMOS manufacturing
48. First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
49. Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs
50. High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics
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