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18 results on '"Rip, Jens"'

4. Additional file 1: of Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants

Author

Pacco, Antoine, Tao, Zheng, Rip, Jens, Dorp, Dennis, Philipsen, Harold, and Holsteyns, Frank

Abstract

S1. Anisotropic etch rate ratio (R(110)/R(100)) as a function of temperature. Anisotropic etch rate ratios, R(110)/R(100), for various temperatures and TMAH concentrations (in wt.%) extracted from other studies [Tabata, 1992; Sato, 1999; Shikida, 2000 & 2001; Pal, 2009]. In all reported cases of etching of c-Si in TMAH, there seems to be a negative correlation between the anisotropic etch rate ratio, R(110)/R(100) and the temperature. S2. Spoke retraction and onset of the amplification effect. This schematic illustrates the gradual wet etching of a wagon-wheel spoke as a function of the etching time and the onset of the spoke retraction. The amplification effect initiates only after the spoke tip is sharpened (b), after which the retraction length (∆l) can be used as an approximation for the sidewall loss (∆w), and thus for the etch rate of the sidewall plane. Before situation (b), the etch rate can only be calculated by direct measurement of the sidewall loss (∆d). (a) Top view of the spoke before wet etching. (b) Spoke after wet etching resulting in sidewall loss (∆d) and in tip sharpening. The dotted line in ‘b’ represents the starting spoke contour of spoke ‘a’. Note that the spoke length did not significantly decrease. (c) Further wet etching results in a significant spoke length retraction (∆l) that can be correlated to the sidewall loss (∆w) by the formula ∆w = ∆l . sin(α/2). The dotted line in ‘c’ represents the contour of spoke ‘b’. S3.1. Etching time series of c-Si75Ge25(110) wagon-wheels in PAA-solution. S3.2. Etching time series of c-Si(100) wagon-wheels in PAA-solution. (DOCX 495 kb)

Published
2019
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6. Mask absorber development to enable next-generation EUVL

Author

Philipsen, Vicky, primary, Luong, Vu, additional, Opsomer, Karl, additional, Souriau, Laurent, additional, Rip, Jens, additional, Detavernier, Christophe, additional, Erdmann, Andreas, additional, Evanschitzky, Peter, additional, Laubis, Christian, additional, Hönicke, Philipp, additional, Soltwisch, Victor, additional, and Hendrickx, Eric, additional

Published
2019
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7. SiGe vs. Si Selective Wet Etching for Si Gate-all-Around

Author

Komori, Kana, primary, Rip, Jens, additional, Yoshida, Yukifumi, additional, Wostyn, Kurt, additional, Sebaai, Farid, additional, Liu, Wen Dar, additional, Lee, Yi Chia, additional, Sekiguchi, Ryo, additional, Mertens, Hans, additional, Hikavyy, Andriy, additional, Holsteyns, Frank, additional, and Horiguchi, Naoto, additional

Published
2018
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14. Wet Selective SiGe Etch to Enable Ge Nanowire Formation

Author

Sebaai, Farid, primary, Witters, Liesbeth, additional, Holsteyns, Frank, additional, Wostyn, Kurt, additional, Rip, Jens, additional, Yukifumi, Yoshida, additional, Lieten, Ruben R., additional, Bilodeau, Steven, additional, and Cooper, Emanuel, additional

Published
2016
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16. Investigation of Silicon Saw Damage Removal and Surface Texturing Using KOH for next Generation Silicon Solar Cells

Author

Haslinger, Michael, primary, Rip, Jens, additional, Robert, Sofie, additional, Claes, Martine, additional, Duerinckx, Filip, additional, Debucquoy, Maarten, additional, Mertens, Paul W., additional, John, Joachim, additional, Pysch, Damian, additional, Queisser, Steffen, additional, Schweckendiek, Juergen, additional, and Hajjiad, Ali, additional

Published
2014
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17. (Invited) Selective Etch of Si and SiGe for Gate All-Around Device Architecture

Author

Wostyn, Kurt, Sebaai, Farid, Rip, Jens, Mertens, Hans, Witters, Liesbeth, Loo, Roger, Yakovitch, Andriy, Milenin, Alexey, Horiguchi, Naoto, Collaert, Nadine, Thean, Aaron, Mertens, Paul W., Gendt, Stefan De, and Holsteyns, Frank

Abstract

The Gate All-Around device architecture requires the formation of semiconductor nanowires. As an example SiGe nanowires can be formed by the selective removal of rSi in a Si-SiGe fin-shaped stack. In this paper we will show how alkaline solutions can be used for the selective removal of Si to SiGe and SiGe to Ge. We will also show that the anisotropy of the SiGe alkaline etch is not an extension of Si, even at low to moderate Ge concentrations (Ge [?] 50%).

Published
2015

18. Wet Chemical Recess Etching of Ge2Sb2Te5for 3D PCRAM Memory Applications

Author

Pacco, Antoine, Lai, Ju-Geng, Puttarame Gowda, Pallavi, De Coster, Hanne, Rip, Jens, Wostyn, Kurt, and Sanchez, Efrain Altamirano

Abstract

GeSbTe (GST) compounds have been implemented in Phase Change Random Access Memory (PCRAM) devices. 2D scaling or stacking of PCRAM is limited by cost and therefore the development of 3D architectures is expected. A key requirement for the fabrication of this 3D architecture is the etch-back of the GST. The main objective of this study is to partially recess GST in a controllable way, leaving the surface of the GST smooth after recess. Wet isotropic recess of amorphous and crystalline blanket films as well as patterned samples was explored using commodity chemistries like APM and HPM. Due to some shortcomings of these peroxide-containing solutions, the oxidizing agent was changed from H2O2to O3. In the ozone-containing solutions the roughness of the GST after etch-back could be controlled as well as the selectivity towards Al2O3, SiO2and TiN ensured.

Published
2022
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