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This work explores an effect of nitrogen ion implantation on the life time of WC-Co tools used in particleboard milling. Nitrogen ions with different energy of 5, 50, and 500 keV and fluence of 1e1...

The atomic arrangement in certain ordered alloys, such as B2–Fe60Al40 determines intrinsic material properties for instance, the saturation magnetization. Here we have investigated the influence of open-volume defects on the atomic ordering process at elevated temperatures in Fe60Al40 thin films. A dependence of the ordering process on the type and concentration of defects is observed by positron annihilation spectroscopy combined with ab-initio calculations. Comparing the lifetimes of positrons in the alloy for different annealing and irradiation treatments reveals the role of mono-vacancies, triple defects as well as large vacancy clusters: The rate of atomic ordering to the ordered B2 state is increased in the presence of mono-vacancies whereas triple defects and vacancy complexes decrease the ordering rate. Furthermore, an agglomeration of vacancies during annealing to di-vacancies and larger vacancy clusters is observed. The distribution of open-volume defects can be modified in such a way as to control the thermal stability via ion-irradiation and thermal pre-treatments.

Fabrication of device though bottom-up approach and using nanowires as building blocks has received significant attention as one can build flexible electronics which can handle stress better than thin film based device. However successful joining of the nanowires for fabrication of such device remains a challenge till date. While several well researched joining techniques are available for metal based nanowires, the same for ceramic nanowires is scarce at present. In this work we explore ion beam induced formation of heterojunction between two metal oxide nanowires, namely hydrogen titanate (H2Ti3O7) and cuprous oxide (Cu2O). The electron microscopy studies reveal detailed structural modifications at the joining sections. The ion beam modifications are explained using state-of-the-art TRI3DYN simulations, which details about migration of atoms, defects, sputtering, redeposition and atomic mixing between the two nanowires and emphasize that such junction formation is caused mainly due to atomic collisional effects.

Resistive switching behavior of a ca. 600 nm thick single-crystalline LiNbO3 (LNO) film has been investigated after vacuum-annealing. Oxygen vacancies (OVs) were generated in the LNO thin film during the annealing process. After electro-forming, filamentary resistive switching has been observed, and the performance of switching can be tuned by the compliance current level. Multi-level resistance states including four different low resistance states, were realized by setting different compliance currents, revealing that both concentration of OVs within the conductive filament and the geometry of the conductive filament influence the switching behavior. The conduction mechanisms of the charge transport during switching is discussed based on the current-voltage curves.

Nano-scale hardness and elastic modulus of WC-Co composites and their relationship to the tool life during particleboards milling. The paper summarizes the results of the technique of hardness and elastic modulus determination using a load and displacement sensing indentation experiments. During the tests these properties were measured in nano-scale for different types of WC-Co composites using the Anton Paar TriTec Ultra Nano Hardness Tester (UNHT). In addition, durability examination of WC-Co tools during milling of particleboard was carried out. In the final stage, the correlation of the studied properties with the lifetime of tools was analyzed. The studies have revealed a relationship between micro-hardness and the total cutting length of the WC-Co tools.

Nanoscale, low-phase-noise, tunable transmitter-receiver links are key for enabling the progress of wireless communication. We demonstrate that vortex-based spin-torque nano-oscillators, which are intrinsically low-noise devices because of their topologically protected magnetic structure, can achieve frequency tunability when submitted to local ion implantation. In the experiments presented here, the gyrotropic mode is excited with spin-polarized alternating currents and anisotropic magnetoresistance measurements yield discrete frequencies from a single device. Indeed, chromium-implanted regions of permalloy disks exhibit different saturation magnetization than neighboring, non-irradiated areas, and thus different resonance frequency, corresponding to the specific area where the core is gyrating. Our study proves that such devices can be fabricated without the need for further lithographical steps, suggesting ion irradiation can be a viable and cost-effective fabrication method for densely packed networks of oscillators.

Nanoscale structures were produced on silicon surfaces by low-energy oxygen ion irradiation: periodic rippled or terraced patterns formed spontaneously, depending on the chosen combination of beam incidence angle and ion fluence. Atomic force microscopy image processing and analysis accurately described the obtained nanotopographies. Graphene monolayers grown by chemical vapour deposition were transferred onto the nanostructured silicon surfaces. The interfacial interaction between the textured surface and the deposited graphene governs the conformation of the thin carbon layer; the resulting different degree of regularity and conformality of the substrate-induced graphene corrugations was studied and it was related to the distinctive topographical features of the silicon nanostructures. Raman spectroscopy revealed specific features of the strain caused by the alternating suspension and contact with the underlying nanostructures and the consequent modulation of the silicon-graphene interaction. Lay Description In the field of nanosciences, nanotechnologies and advanced materials, it is pivotal to produce and integrate nanostructures in a controlled, cost-effective and possibly high-throughput manner. Currently, the surface nanopatterning by ion beam irradiation (IBI) is showing its potential in overcoming some of the limits that characterize the conventional lithographic techniques. IBI can produce self-organized and regular patterns of nanostructures, such as ripples, dots, and holes, having heights and lateral periodicities in a pre-defined range. The nanopatterns can develop over large surface areas of a broad class of materials and have been tested for different applications, e.g. microelectronic device fabrication, catalysis, nanoscale magnetism, surface-enhanced Raman scattering. Also, the ion-induced patterns allowed the control of physical properties such as wettability, reflectance, and photoluminescence. As a whole, this is a highly dynamic and continuously evolving field. Graphene was first obtained from bulk graphite by mechanical exfoliation; remarkable mechanical, thermal and optical properties came to light; they make graphene an ideal material for sensing. Also, the research on graphene paves the way for basic and applied studies on other ultrathin thickness materials, such as monolayer transition metal dichalcogenide or monolayer metal oxide, which also show peculiar properties as compared to their bulk version. Since graphene is a zero-gap semi-metal, a finite energy gap must be open to engineer graphene-based electronic devices. At this aim, researchers can take advantage of the mechanical properties of graphene, since its out-of-plane deformation can favourably modify its electronic structure. While the spontaneous, random self-folding of graphene to form wrinkles has thermodynamics reasons and is unavoidable above a certain material length, the interactions between graphene and substrates can generate, in principle, designed wrinkled structures. Therefore, a field of study has emerged, focused on the control and tuning of the geometry of graphene corrugations and their influence on specific physical and chemical properties. To the best of our knowledge, this work studies for the first time the geometry and strain in graphene wrinkles induced by silicon substrates that were suitably nanopatterned by ion beam irradiation.

Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pumping, spin-transfer torques, conversion between charge and spin currents and vice-versa. These interfacial phenomena play crucial roles for magnetic data storage and transfer applications, which require forming FM nano-structures embedded in non-ferromagnetic matrices. Here, we investigate the possiblity of creating such nano-structures by ion-irradiation. We study the effect of lateral confinement on the ion-irradiation-induced reduction of non-magnetic metal oxides (e.g., antiferro- or paramagnetic) to form ferromagnetic metals. Our findings are later exploited to form 3-dimensional magnetic interfaces between Co, CoO and Pt by spatially-selective irradiation of CoO/Pt multilayers. We demonstrate that the mechanical displacement of the O atoms plays a crucial role during the reduction from insulating, non-ferromagnetic cobalt oxides to metallic cobalt. Metallic cobalt yields both perpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and, at low temperatures, exchange bias at vertical interfaces between Co and CoO. If pushed to the limit of ion-irradiation technology, this approach could, in principle, enable the creation of densely-packed, atomic scale ferromagnetic point-contact spin-torque oscillator (STO) networks, or conductive channels for current-confined-path based current perpendicular-to-plane giant magnetoresistance read-heads., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces copyright \c{opyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https:// pubs.acs.org/articlesonrequest/AOR-rPGr2e7nZ7tzzwK3tnBZ

GaN is the most actively studied wide-bandgap material, applicable e.g. in short-wavelength optoelectronic devices, high-electron-mobility transistors, and semiconductor lasers. The crystallographic orientation of an implanted crystal can significantly influence the optical properties of the implanted layer, reflecting the rearrangement of the crystal matrix after annealing. The annealing procedure, influencing dynamic recovery, point defect diffusion and large defect stabilisation, depending on the GaN crystal orientation and the used ion implantation parameters, is still an important issue to be studied. We have studied the structural and compositional changes of the GaN-epitaxial-layers of c-plane and a-plane orientations grown by MOVPE and implanted with Gd and Kr ions using the ion energy of 400 keV and ion fluences of 5 × 1014 cm−2, 1 × 1015 cm−2 and 5 × 1015 cm−2 with subsequent annealing at 800 °C in ammonia. Dopant depth profiling was accomplished by Rutherford backscattering spectrometry (RBS). Induced structure disorder and its recovery during subsequent annealing were characterised by RBS channelling and Raman spectroscopy. Ion-implanted c-plane and a-plane GaN exhibit significant differences in damage accumulation simultaneously with post-implantation annealing, inducing a different structural reorganization of the GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the ion-implantation fluence and ion mass.

In this paper, we perform a comparison of magnetic and electrical properties between Mn-doped and (Mn, Zn) co-doped GaP dilute ferromagnetic semiconductors. Due to the shallow Zn impurity level (∼20–40 meV above the top of the III-V compounds valence band), the Zn co-doping leads to the increase of conductivity of (Ga,Mn)P, however both the Curie temperature and magnetization reduce, which is probably due to the suppression of active Mn substitution by Zn co-doping.

We report on the hyperdoping of silicon with selenium obtained by ion implantation followed by flash lamp annealing. It is shown that the degree of crystalline lattice recovery of the implanted layers and the Se substitutional fraction depend on the pulse duration and energy density of the flash. While the annealing at low energy densities leads to an incomplete recrystallization, annealing at high energy densities results in a decrease of the substitutional fraction of impurities. The electrical properties of the implanted layers are well-correlated with the structural properties resulting from different annealing processing.

The depth resolution of mono-energetic positron annihilation spectroscopy using a positron beam is shown to improve by concurrently removing the sample surface layer during positron beam spectroscopy. During ion-beam sputtering with argon ions, Doppler-broadening spectroscopy is performed with energies ranging from 3 keV to 5 keV allowing for high-resolution defect studies just below the sputtered surface. With this technique, significantly improved depth resolutions could be obtained even at larger depths when compared to standard positron beam experiments which suffer from extended positron implantation profiles at higher positron energies. Our results show that it is possible to investigate layered structures with a thickness of about 4 microns with significantly improved depth resolution. We demonstrated that a purposely generated ion-beam induced defect profile in a silicon sample could be resolved employing the new technique. A depth resolution of less than 100 nm could be reached.

Single crystalline 128°Y-cut LiNbO 3 thin films with a thickness of 670 nm are fabricated onto Si substrates by means of crystal ion slicing (CIS) technique, adhesive wafer bonding using BCB as the medium layer to alleviate the large thermal coefficient mismatch between LiNbO 3 and Si, and the X-ray diffraction pattern indicates the exfoliated thin films have good crystalline quality. The LiNbO 3 thin films are modified by low energy Ar + irradiation, and the surface roughness of the films is decreased from 8.7 nm to 3.4 nm. The sputtering of the Ar + irradiation is studied by scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy, and the results show that an amorphous layer exists at the surface of the exfoliated film, which can be quickly removed by Ar + irradiation. A two-stage etching mechanism by Ar + irradiation is demonstrated, which not only establishes a new non-contact surface polishing method for the CIS-fabricated single crystalline thin films, but also is potentially useful to remove the residue damage layer produced during the CIS process.

We report on the synthesis of embedded gold (Au) nanoparticles (NPs) in Nd:YAG single crystals using ion implantation and subsequent thermal annealing. Both linear and nonlinear absorption of the Nd:YAG crystals have been enhanced significantly due to the embedded Au NPs, which is induced by the surface plasmon resonance (SPR) effect in the visible light wavelength band. Particularly, through a typical Z-scan system excited by a femtosecond laser at 515 nm within the SPR band, the nonlinear absorption coefficients of crystals with Au NPs have been observed to be nearly 5 orders of magnitude larger than that without Au NPs. This giant enhancement of nonlinear absorption properties is correlated with the saturable absorption (SA) effect, which is the basis of passive Q-switching or mode-locking for pulsed laser generation. In addition, the linear and nonlinear absorption enhancement could be tailored by varying the fluence of implanted Au+ ions, corresponding to the NP size and concentration modulation. Finally, the Nd:YAG wafer with embedded Au NPs has been applied as a saturable absorber in a Pr:LuLiF4 crystal laser cavity, and efficient pulsed laser generation at 639 nm has been realized, which presents superior performance to the MoS2 saturable absorber based system. This work opens an avenue to enhance and modulate the nonlinearities of dielectrics by embedding plasmonic Au NPs for efficient pulsed laser operation.

This paper reports on structural and magnetic properties changes that occur after irradiation of Fe/Pt (1 1 1) multilayers with Ne+ ions. Multilayer samples of Al 2 O 3 (0 0 0 1)/Pt 100 A/(Fe X A/Pt X A) n /Pt 100 A structure with different individual layer thickness X (5 or 10 A) and different number of bilayers n (5, 10 or 15) were irradiated with Ne+ ions of 10 to 25 keV energy and 1 × 10 14 ÷ 1 × 10 16 ions cm −2 dose range at room temperature. Irradiation parameters were estimated a priori using Tridyn software. As-deposited samples revealed presence of sharp interfaces. Structural properties changes were investigated using symmetrical and asymmetrical X-ray diffraction methods and magnetic properties changes were examined using vibrating sample magnetometer. Ion beam induced mixing of multilayers resulted in formation of disordered face centered cubic (fcc) FePt alloys of two different compositions (quasi-50:50 in the initial multilayer volume and Pt-rich in initial cover-layer volume). Non-regular changes in magnetic properties after ion irradiation were observed whilst retaining in-plane orientation of magnetization easy axis.

Epitaxial thin ZnO films grown by Atomic Layer Deposition were implanted with 150 keV Pr ions to a fluence of 1 × 10 15 at/cm 2 . Implanted samples were subjected to two different kinds of annealing: rapid thermal annealing (RTA) and millisecond-range flash lamp annealing (FLA). Structural properties of implanted and annealed ZnO and the optical response were evaluated by the Channeling Rutherford Backscattering Spectrometry (RBS/c), High-resolution X-ray diffraction and Photoluminescence Spectroscopy (PL), respectively. The results shown, that both annealing techniques lead to recrystallization of the ZnO lattice, that was damaged during the ion implantation. Upon RTA performed at 800 °C a return of Zn atoms from interstitial to their regular site positions is accompanied by rejection of primarily substitutional Pr atoms to the interstitial sites. Consequently, it leads to the out-diffusion and precipitation of Pr atoms on the surface. In contrast to RTA, the diffusion of implanted Pr during a millisecond range FLA treatment is completely suppressed. Despite differences in location of Pr inside the ZnO matrix after FLA and RTA, both annealing techniques lead to the optical activation of Pr 3 + . Interestingly, our RBS/c study for as implanted layers also revealed the anomalous damage peak, called intermediate peak (IP) located between the expected surface and the bulk damage peak. The PL spectra clearly suggest, that the defect which forms the IP, can be assigned to Zn interstitials. The long-time annealing at 800 °C in oxygen atmosphere causes the complete removal of the IP.

Helium implanted tungsten-titanium ODS alloys are investigated using positron annihilation spectroscopy and nanoindentation. Titanium reduces the brittleness of the tungsten alloy, which is manufactured by mechanical alloying. The addition of Y2O3 nanoparticles increases the mechanical properties at elevated temperature and enhances irradiation resistance. Helium ion implantation was applied to simulate irradiation effects on these materials. The irradiation was performed using a 500 kV He ion implanter at fluences around 5 × 1015 cm−2 for a series of samples both at room temperature and at 600 °C. The microstructure and mechanical properties of the pristine and irradiated W-Ti-ODS alloy are compared with respect to the titanium and Y2O3 content. Radiation damage is studied by positron annihilation spectroscopy analyzing the lifetime and the Doppler broadening. Three types of helium-vacancy defects were detected after helium irradiation in the W-Ti-ODS alloy: small defects with high helium-to-vacancy ratio (low S parameter) for room temperature irradiation, larger open volume defects with low helium-to-vacancy ratio (high S parameter) at the surface and He-vacancy complexes pinned at nanoparticles deeper in the material for implantation at 600 °C. Defect induced hardness was studied by nanoindentation. A drastic hardness increase is observed after He ion irradiation both for room temperature and elevated irradiation temperature of 600 °C. The Ti alloyed tungsten-ODS is more affected by the hardness increase after irradiation compared to the pure W-ODS alloy.

The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0 0 0 1) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 × 1015 and 5 × 1016 cm−2. Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures.

Diamond is proposed as an extraordinary material usable in interdisciplinary fields, especially in optics and photonics. In this contribution we focus on the doping of diamond with erbium as an optically active centre. In the theoretical part of the study based on DFT simulations we have developed two Er-doped diamond structural models with 0 to 4 carbon vacancies in the vicinity of the Er atom and performed geometry optimizations by the calculation of cohesive energies and defect formation energies. The theoretical results showed an excellent agreement between the calculated and experimental cohesive energies for the parent diamond. The highest values of cohesive energies and the lowest values of defect formation energies were obtained for models with erbium in the substitutional carbon position with 1 or 3 vacancies in the vicinity of the erbium atom. From the geometry optimization the structural model with 1 vacancy had an octahedral symmetry whereas the model with 3 vacancies had a coordination of 10 forming a trigonal structure with a hexagonal ring. In the experimental part, erbium doped diamond crystal samples were prepared by ion implantation of Er+ ions using ion implantation fluences ranging from 1 × 1014 ions per cm2 to 5 × 1015 ions per cm2. The experimental results revealed a high degree of diamond structural damage after the ion implantation process reaching up to 69% of disordered atoms in the samples. The prepared Er-doped diamond samples annealed at the temperatures of 400, 600 and 800 °C in a vacuum revealed clear luminescence, where the 〈110〉 cut sample has approximately 6–7 times higher luminescence intensity than the 〈001〉 cut sample with the same ion implantation fluence. The reported results are the first demonstration of the Er luminescence in the single crystal diamond structure for the near-infrared spectral region.

A highly versatile and scalable path to obtain buried magnetic nanostructures within alloy thin films, while maintaining a flat topography, is described. A magnetic pattern of nanoscale periodicity is generated over ∼cm 2 areas by employing a B2 → A2 structural transition in the prototype Fe 60 Al 40 thin alloy films. The phase transition was induced in the confined regions via ion-irradiation through self-assembled nanosphere masks. In this way, large area patterns of a hexagonal symmetry of ferromagnetic nanostructures embedded within a paramagnetic Fe 60 Al 40 thin film are realized. The depth and lateral distribution of the induced magnetization was investigated by magnetometry and microscopy methods. Magnetic contrast imaging as well as simulations shows that the obtained magnetic structures are well defined, with the magnetic behavior tunable via the mask geometry.

Graphene oxide (GO) is an electrical insulator as most of the carbon atoms in this material are sp3-hybridized. Its physical, optical and chemical properties depend on the type and degree of reduction process. Presently, copper ion irradiation of GO foil has been performed at Ion Beam Center of the Helmholtz-Zentrum Dresden-Rossendorf to investigate the behavior of a set of GO foils under this irradiation at low energy and different fluences up to 5 × 1016 ions/cm2. The compositional and optical properties of graphene oxide have been studied as a function of the fluences of implanted copper ions in the wavelength range 400–1000 nm. The results of ellipsometry microscopy, helium Rutherford backscattering spectroscopy, elastic recoil detection analysis, Raman spectroscopy and SEM-EDX measurements will be presented and discussed.

The rare-earth nickelates are a rich playground for transport properties, known to host non-Fermi liquid character, resistance saturation and metal-insulator transitions. We report a study of transport in LaNiO3 in the presence of tunable disorder induced by irradiation. While pristine LaNiO3 samples are metallic, highly irradiated samples show insulating behaviour at all temperatures. Using irradiation fluence as a tuning handle, we uncover an intermediate region hosting a metal-insulator transition. This transition falls within the Mott-Ioffe-Regel regime wherein the mean free path is comparable to lattice spacing. In the high temperature metallic regime, we find a transition from non-Fermi liquid to a Fermi-liquid-like character. On the insulating side of the metal-insulator transition, we find behaviour that is consistent with weak localization. This is reflected in magnetoresistance that scales with the square of the field and in resistivity. In the highly irradiated insulating samples, we find good agreement with variable range hopping, consistent with Anderson localization. We find qualitatively similar behaviour in thick PrNiO3 films as well. Our results demonstrate that ion irradiation can be used to tailor transport, serving as an excellent tool to study the physics of localization., Comment: 14 pages, 4 figures

EPMA (Electron Probe Microanalysis) and SIMS (Secondary Ion Mass Spectrometry) are widely used analytical techniques for geochemical and mineralogical applications. Nevertheless, metrologically rigorous quantification remains a major challenge for these methods. SIMS in particular is a matrix-sensitive method; for SIMS the use of matrix-matched reference materials (RMs) is essential in order to avoid significant analytical bias. A major problem is that the list of available RMs for SIMS is vanishingly short compared to the needs of the analyst. One approach for the production of matrix-specific RMs is the use of high-energy ion implantation that introduces a known amount of a selected isotope into a material. We chose the more elaborate way of implanting a so-called ‘box profile’ to generate a quasi-homogeneous concentration of the implanted isotope in three dimensions, which allows RMs not only to be used for ion beam analysis but also makes them suitable for EPMA. For proof of concept, we used the thoroughly studied mineralogically and chemically ‘simple’ SiO2 system, which addresses many interesting scientific challenges, such as the Ti-in-quartz geothermometer (Wark et al. 2006, Thomas et al. 2010). We implanted either 47Ti or 48Ti into synthetic, ultra-high purity silica glass. Several ‘box profiles’ with concentrations between 10 and 1000 µg g-1 Ti and maximum depths of homogeneous Ti distribution between 200 nm and 3 µm were produced at the Institute of Ion Beam Physics and Materials Research of Helmholtz-Zentrum Dresden-Rossendorf (HZDR). Multiple implantation steps using varying ion energies and ion doses were simulated with the SRIM (Stopping and Range of Ions in Matter) software (Ziegler et al. 2008), optimizing for the target concentrations, implantation-depths and technical limits of the implanter. We characterized several implant test-samples having different concentrations and maximum implantation depths by means of SIMS and other analytical techniques. The results show that the implant samples are suitable for use as reference materials for SIMS measurements. The multi-energy ion implantation technique also looks to be very promising procedure for the production of EPMA-suitable reference materials.

Modifications of magnetic and magneto-optical properties of Pt/Co(d Co )/Pt upon Ar+ irradiation (with energy 1.2, 5 and 30 keV) and fluence, F at the range from 2 · 1013-2 · 1016 Ar+ cm-2) were studied. Two 'branches' of increased perpendicular magnetic anisotropy (PMA) and enhanced magneto-optical response are found on 2D (d Co , F) diagrams. The difference in F between 'branches' is driven by ion energy. Structural features correlated with magnetic properties have been analysed thoroughly by x-ray diffraction, Rutherford backscattering spectrometry and positron annihilation spectroscopy. Experimental results are in agreement with TRIDYN numerical calculations of irradiation-induced layers intermixing. Our work discusses particularly structural factors related to crystal lattice defects and strain, created and modified by irradiation, co-responsible for the increase in the PMA.

(0001) c-plane and (11−20) a-plane GaN epitaxial layers were implanted with 400 keV Au+ and Gd+ ions using ion implantation fluences of 5×1014, 1×1015 and 5×1015 cm-2. Rutherford Back-Scattering spectrometry in channelling mode (RBS/C) was used to follow the dopant depth profiles and the introduced disorder; the angular dependence of the backscattered ions (angular scans) in c- and a-plane GaN was measured to get insight into structural modification and dopant position in various crystallographic orientations. Defect-accumulation depth profiles exhibited differences for a- and c-plane GaN, with a-plane showing significantly lower accumulated disorder in the buried layer, accompanied by the shift of the maximum damage accumulation into the deeper layer with respect to the theoretical prediction, than c-plane GaN. Angular scans showed channelling preservation in as-implanted samples and better channelling recovery in the annealed a-plane GaN compared to cplane GaN. The angular scan widths were simulated by FLUX code as well as the half-width modifications of angular scans were discussed in connection to the damage accumulation. Photoluminescence measurement followed in detail yellow band and band edge luminescence decline after the implantation and the recovery of luminescence spectra features after annealing.

Graphene and its allotropes belong to the new generation of materials. Due to their extraordinary electrical, mechanical and other properties, their application possibilities are vast. In this work, a study on interactions of graphene oxide (GO) layers using Au and Ga ions with energy of 40 keV was realized. Very shallow layers of GO are modified as low energy ions are depositing energy mostly in the upper layer due to the low projected ion ranges at most of 50 nm. The ion irradiation fluences of 5.0 × 1014 cm−2, 5.0 × 1015 cm−2 and 5.0 × 1016 cm−2 were used. Upon irradiation, the modified GO foils were characterised using nuclear analytical methods – Rutherford Backscattering Spectrometry (RBS), Elastic Recoil Detection Analysis (ERDA) and various conventional analytical methods such as Raman spectroscopy, Attenuated Total Reflectance Fourier Transform Infrared Spectroscopy (ATR-FTIR), X-ray Photoelectron Spectroscopy (XPS), and 2-point conductivity measurements. Oxygen species removal was evidenced as the increasing function of the ion implantation fluence and oxygen depth profiles exhibited complex behaviour connected to implanted ion specie. The deep oxygen depletion in the broad surface layer accompanied by Ga diffusion into the depth was observed in Ga irradiated GO compared to Au irradiated samples which exhibited a narrow oxygen depleted layer at GO surface. XPS evidenced strong increase of C=C bonds compared to C-O bonds on the irradiated GO surface with increasing ion fluence, which was comparable for both ion species. Raman spectroscopy shows the modification of main phonon modes identified in GO. The D peak slight decrease and broadening was observed for GO irradiated with ion fluence above 5 × 1015 cm−2 and mainly for Au ion irradiation. FTIR analysis proved the oxygen containing functional group release with the increased ion fluence, mainly C-O group release after Au ion irradiation was observed. Simultaneously H-O stretching absorption peak is in FTIR spectrum reduced more significantly for Ga irradiated GO which is in accordance with RBS elemental analysis exhibiting the more pronounced hydrogen depletion. Electrical conductivity measurement shows the linear I-V characteristics for the GO irradiated using both ion species and all ion fluences; the surface layer exhibited conductive behaviour comparing to pristine GO non-linear I-V characteristics.

Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties. Direct substitutions have thus far been limited to incidental Si impurities and P, N and B dopants introduced using low-energy ion implantation. We present here the heaviest impurity to date, namely $^{74}$Ge$^+$ ions implanted into monolayer graphene. Although sample contamination remains an issue, atomic resolution scanning transmission electron microscopy imaging and quantitative image simulations show that Ge can either directly substitute single atoms, bonding to three carbon neighbors in a buckled out-of-plane configuration, or occupy an in-plane position in a divacancy. First principles molecular dynamics provides further atomistic insight into the implantation process, revealing a strong chemical effect that enables implantation below the graphene displacement threshold energy. Our results show that heavy atoms can be implanted into the graphene lattice, pointing a way towards advanced applications such as single-atom catalysis with graphene as the template., 20 pages, 5 figures

Bacterial adhesion on medical instruments’ and food packages’ surfaces causes implanted infections, food spoilage and human disease, therefore attracts a lot of attention in the field of medical and food applications. Containing the initial adhesion of bacteria on the surface of the material plays an important role in reducing potential safety hazards. In this work, we investigate the influence of silver ion implantation with different doses on the antibacterial performance of the polyethylene (PE) films. It is found out that silver ion implantation will not color the PE films but can improve their surface hydrophilicity. The silver-implanted PE films show the ability to inhibit bacterial adhesion and have the bactericidal effect, both of which can be improved with increasing silver implantation dose. This method also proves relatively safe, because the silver ions are relatively stable. The results will introduce potential applications for ion implantation in the food packing and food accessible materials.

Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.

Ion beam sputtering can induce the formation of regular self-assembled surface nanostructures on different materials. Several experimental variables, such as the ion energy, the ion incidence angle, the ion fluence, together with the sample surface properties and temperature, have been proven to control in a complex and not completely codified manner the formation of periodically arranged dot, hole or ripple nanopatterns. In this work, we have studied how to apply ion beam sputtering to induce periodic ripples of specific aspect ratio on silicon surfaces, namely ripple height a of about 10nm and period λź50nm, since these topographies can be appealing for technological applications. Silicon surfaces were irradiated with increasing O+ and Xe+ ion fluences at fixed ion energy and incidence angle. We have verified that some combinations of the chosen parameter values produced the desired structures. The obtained results also indicate that with a further refinement of those parameter values a better control of the aspect ratio of the obtained ripples is possible. Therefore, this work is a contribution to the final aim of exploiting ion beam sputtering as a fast, cost-effective and single-step method to fabricate well-controlled patterns over large surface areas at length scales beyond those of both standard and e-beam lithography. Display Omitted An empirical recipe has been provided to obtain nano-ripples of desired height a and wavelength λ by ion beam sputtering.The ion species, energy, incidence angle, and dose have been varied to fabricate ripples on Si of aspect ratio a/λź1/5.Through AFM and SEM analysis, the limits about the effective tuning of the ripple feature sizes have been discussed.Some of the obtained structures can potentially be used in plasmonics, electrochemical devices and bio-devices.

This paper presents a DFT study of the positions of erbium ions in the ZnO structure as well as experimental study of Er ion implantation into different crystallographic cuts of ZnO. The theoretical simulations have compared cohesive energies and defect-formation energies for different Er positions in the wurtzite ZnO structure. In the experimental part, single-crystal ZnO substrates were implanted with Er+ ions at an energy of 190 keV using fluences of 1 × 1016 and 5 × 1016 ion.cm−2. The ion implantation was followed by the application of the thermal annealing in oxygen atmosphere at 1000 °C for 5 h. The RBS/channelling method with fine scans was used to study the positions of erbium ions and structure recovery during the annealing process. The Er-doped ZnO samples exhibited clear luminescence in the NIR spectral region at around 1.5 μm. This work provides new results on the comparison of erbium ion implantation into different polar and non-polar crystallographic cuts of ZnO, resulting in different luminescence properties of the samples. Experimental and theoretical results are compared as well.

Graphene oxide foils implanted with copper ions at low energy and high dose, have been proposed as hybrid graphene-based materials suitable to be laser irradiated in vacuum to produce hot plasmas. The special lattice structure of the graphene oxide foil can improve the propagation of the laser accelerated electrons inside the foil and to enhance the electron density emerging from the rear foil surface. In such conditions the electric field developed in the non-equilibrium plasma increases and consequently in the forward ion acceleration. The foils have been optimized in thickness and they were irradiated with optimized laser parameters in order to produce high energy and quasi-monoenergetic proton beams by the femtosecond laser at the Institute of Plasma Physics and Laser Microfusion in Warsaw, Poland. Gaf chromic film and silicon carbide detectors were used to monitor the plasma properties and to measure the velocity of the emitted protons and carbon ions from plasma.

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics., 26 pages, including the suppl information

Future space missions will operate in increasingly hostile environments, such as those in low-perihelion solar orbits and Jovian magnetosphere. This exploration involves the selection of optical materials and components resistant to the environmental agents. The conditions in space are reproduced on ground through the use of ion accelerators. The effects of He particles coming from the solar wind impinging on a gold thin film have been systematically investigated, considering absorbed doses compatible with the duration of the European Space Agency Solar Orbiter mission. Structural and morphological changes have been proved to be dependent not only on the dose but also on the irradiation flux. A predictive model of the variation of thin film reflectance has been developed for the case of lower flux irradiation. The results are discussed regarding reliability and limitations of laboratory testing. The outcomes are important to address the procedures for the space qualification tests of optical coatings.

The room-temperature broadband photoresponse of silicon in the infrared region is of great interest for on-chip photonic platforms, but is fundamentally limited to the near infrared, due to the particular value of the band gap. The authors combine ion implantation with pulsed laser melting in a CMOS-compatible approach to introducing Te dopant into the Si crystal, at concentrations orders of magnitude above the solid solubility limit. This leads to the formation of an intermediate band in the upper half of silicon's band gap, extending the photoresponse of Te-hyperdoped $p\ensuremath{-}n$ photodiodes to the midinfrared range.

Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO

This corrects the article DOI: 10.1103/PhysRevLett.119.067405.

We present systematic temperature-dependent resistance noise measurements on a series of ferromagnetic ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ epitaxial thin films covering a large parameter space in terms of the Mn content $x$ and other variations regarding sample fabrication. We infer that the electronic noise is dominated by switching processes related to impurities in the entire temperature range. While metallic compounds with $xg2%$ do not exhibit any significant change in the low-frequency resistance noise around the Curie temperature ${T}_{\mathrm{C}}$, we find indications for an electronic phase separation in films with $xl2%$ in the vicinity of ${T}_{\mathrm{C}}$, manifesting itself in a maximum in the noise power spectral density. These results are compared with noise measurements on an insulating ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{P}$ reference sample, for which the evidence for an electronic phase separation is even stronger and a possible percolation of bound magnetic polarons is discussed. Another aspect addressed in this work is the effect of ion-irradiation-induced disorder on the electronic properties of ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ films and, in particular, whether any electronic inhomogeneities can be observed in this case. Finally, we put our findings into the context of the ongoing debate on the electronic structure and the development of spontaneous magnetization in these materials.

Magnonic crystals (metamaterials to control magnetism) are attractive for manipulating spin waves in digital logic and storage applications, but in the end one needs to be able to actually produce them---an interesting challenge in nanotechnology. This work shows how interlayer coupling and magnetization strength can be engineered in Co/Mo/Co ultrathin-film structures by ion irradiation. Modifications of magnetic properties are correlated to and explained by structural evolution, as revealed by numerical simulations. The authors propose numerous types of magnonic crystals that can be fabricated according to these insights.

Y128- and Y36-cut single-crystalline lithium niobate (LN) thin films are fabricated by the crystal-ion-slicing (CIS) technique onto LN substrates. The conditions for the successful exfoliation of submicron-thick LN thin films are independent of the wafer orientation used in the present work. Wafer bonding using benzocyclobutene (BCB) is adopted to transfer LN thin films onto substrates, instead of the generally used hydrophilic bonding, which does not need a strict surface polishing process before the bonding. A noncontact polishing method involving low-energy Ar+ irradiation is adopted to treat the sliced LN thin films. The atomic force microscopy result shows that the surface roughness of the LN thin film is reduced from 10.6 to 6.4 nm.

Exchange bias stems from the interaction between different magnetic phases and therefore it generally occurs in magnetic multilayers. Here we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature, but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to around 0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation., Comment: 14 pages, 5 figures

Ga 1− x Mn x As layers prepared by ion implantation and subsequent pulsed laser annealing with the planned Mn concentrations of x = 0.01–0.08 have been studied using the magneto-optical transversal Kerr effect (TKE) and spectral ellipsometry. The spectral dependences of the diagonal and nondiagonal components of the permittivity tensor (PT), as well as the spectrum of magnetic circular dichroism (MCD) have been calculated for the layers. The obtained spectra of the diagonal PT components show that the layers under study maintain the zinc-blende crystal structure of the parent GaAs semiconductor. All studied samples reveal a strong TKE response at low temperatures with a dependence of an effective Curie temperature (at which TKE appears) on the Mn concentration. A number of extrema in the low-temperature TKE and MCD spectra are close to the energies of transitions in the Γ and L critical points of the parent semiconductor band structure that confirms the intrinsic ferromagnetism of the Ga 1− x Mn x As layers. The MCD spectra shape and its change with Mn concentration increasing are discussed on a base of the valence-band model of ferromagnetism in DMS.

Epitaxial ZnO thin films grown by atomic layer deposition on GaN/Al2O3 substrates are implanted with Yb, Dy, and Pr ions to a fluence of 5e14 atcm-2 and subsequently anneals at 800 C using a rapid thermal annealing (RTA) system. Structural properties of implanted and annealed ZnO films and the optical response are evaluated by channeling Rutherford backscattering (RBS/c) and photoluminescence spectroscopy (PL), respectively. RTA leads to a partial removal of the post-implantation defects with simultaneous native defects transformation and optical activation of RE ions. It is found that two groups of defects: defects formed during implantation process and native defects, play an important role in the luminescence in the visible region. The room temperature PL spectra obtained from annealed ZnO:RE films do not show sharp PL lines from transitions within the RE 4f shell, but show near band gap emission and defect related emission, which energy emission is controlled by the RE atoms. It suggests a presence of RE-related complexes that are formed during hightemperature annealing in oxygen atmosphere. The excitonic and defect emission modified by RE ions create an optical response of the system resulting in a specific color of the emitted light.