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Traditionally, CMOS is not considered a light emitting device. Similar to laser or LED, and microwave devices, Photonic Millimeter Wave CMOS transistors are both light as well as microwave emitting devices. Ever since AMD releases the 64-bits Athlon processor in around 2005–2006, the clock speed race for ASIC and processors has been stopped. Wireless tools always replace wired electronic tools. The very large number (trillions) and multiple layers of metal wires seen in ASICs and ULSI significantly slow down the processors. Using microwave photonic CMOS and wireless ULSI, clock speed races may resume, reaching far beyond 6G wireless generations. [ABSTRACT FROM AUTHOR]

Copyright of Folia Cardiologica is the property of VM Medica-VM Group (Via Medica) and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Kaolinite-rich coal gangue contains a large amount of SiO2 and Al2O3. In this work, the coal gangue was selected to leach the Al2O3 by using hydrochloric acid and then to leach the SiO2 from the acid leaching slag by NaOH alkaline. The effects of acid leaching concentration, acid leaching temperature, acid leaching time and liquid-solid ratio on the leaching rate of Al2O3 from calcined coal gangue were investigated, and the effects of alkaline leaching conditions on the leaching rate of SiO2 from acid leaching slag were also explored. The results show that when the conditions of acid leaching and alkali leaching are optimized by single variable experiment, the leaching rate of Al2O3 in coal gangue is 92.6%, and the leaching rate of SiO2 in acid leaching residue is 99.1%. The study of the kinetic models of acid leaching and alkaline leaching processes shows that, the kinetics model of the acid leaching process of coal gangue is in accordance with the mixed control model of internal diffusion and chemical reaction, while the alkaline leaching agreed well with the chemical reaction control model. There is a good linear relationship between the logarithm of the apparent reaction rate constants ln kc and ln kb versus T-1, for the acid leaching mixed control model and the alkaline leaching chemical reaction control model, respectively. In this paper, the kinetic rate equations of acid leaching process and alkali leaching process are also obtained. The results of this study can be used to guide the production of aluminum and silicon leaching from industrial coal gangue. [ABSTRACT FROM AUTHOR]

Photovoltaic (PV)‐powered vehicle applications are very attractive for reducing CO2 emission and creation of new market. Development of Si tandem solar cells is very promising for high‐efficiency and low‐cost solar cells. This paper presents our approaches for III–V/Si 3‐junction tandem solar cells. In this paper, 24.9% efficiency Si heterojunction solar cells and mechanically stacked four‐terminal 35.8% InGaP/GaAs/Si three‐junction tandem solar cell are shown. Roadmap for realizing high‐efficacy three‐junction tandem solar cells of more than 40% is discussed in this paper. Because efficiencies of record cell of 36.1% with III–V/Si three‐junction tandem cells and 33.9% with perovskite/Si two‐junction cells are lower compared to 39.5% with III–V three‐junction solar cells, it is necessary to clarify and reduce several losses of Si tandem solar cells. This paper presents high efficiency potential of III–V/Si three‐junction and perovskite/Si two‐junction solar cells analyzed by using our analytical procedure and discusses about non‐radiative recombination, optical, and resistance losses in those Si tandem cells. Current status of various solar cell module efficiencies including our new record efficiency Si tandem solar cell module with an efficiency of 33.66% is also analyzed. [ABSTRACT FROM AUTHOR]

Dislocations are generated in Si wafers during flash lamp annealing for 20 ms. The samples have been etched to different depths and macro‐photoluminescence (PL) spectra have been recorded for different dislocation densities. A micro‐PL investigation is also carried out on a cross section of a sample. Four characteristic emission peaks are found, which are the well‐known D1, D2, D3, and D4 lines. The findings demonstrate a significant influence of the defect densities on the PL spectra of the D lines by using both the micro‐ and the macro‐PL setups, and show a correlation of the PL intensities with etch pit density measured against the depth of the wafer. Additionally, the D lines dependency on temperature is explored, offering insights into the underlying mechanisms. The D lines exhibit a pronounced temperature dependence, which can be attributed to various factors including phonon interactions and thermal expansion effects. The influence of nickel contamination is also examined. [ABSTRACT FROM AUTHOR]

Groundwater monitoring has been performed in a well of the Kultuk area on the western shore of Lake Baikal since 2013. Compression and extension of the near-surface crust are defined through measurements of an AR4/8 (234U/238U activity ratio) and an A4 (234U activity) in groundwater from the Kultuk reservoir. Its thermal state is estimated by determining thermophilic macrocomponents Si, Na, and microcomponent Li. The recorded change in the groundwater reservoir and coeval seismogenic processes, which resulted in earthquakes of the central Baikal Rift System, are considered paragenetically related near-surface and deeper processes of the crust, respectively. It is inferred that compression of the Kultuk area, accompanied by the Goloustnoe earthquake in 2015, was changed by its extension during the strong Baikal–Khubsugul seismic reactivation in 2020–2023. Under compression of the crust, groundwater ascended from a shallow part of the reservoir of 0.5–0.9 km episodically heated up to 116°C by friction in a fault plane. Afterward, a deeper hydrogeodynamic center was generated with its final localization at a depth of about 1.2 km in 2019–2020; during the subsequent Baikal–Khubsugul seismic reactivation, groundwater mainly upraised from the hydrogeodynamic center with frictional heating in a fault plane up to 99°C. Episodic penetration of groundwater portions from depth up to 1.6 km accompanied a slight upward enlargement of an active part of the reservoir to 1 km. The further monitoring of chemical hydrogeodynamics of the Kultuk reservoir may provide a forecast of seismic hazards in the central Baikal Rift System. Research highlights: 10-year groundwater monitoring in the Kultuk area of the western shore of Lake Baikal shows the temporal change of compression and extension of the near-surface crust through measurements of an AR4/8 (234U/238U activity ratio) and an A4 (234U activity). Compression was accompanied by the moderate Goloustnoe earthquake in 2015. Change to extension results in strong Baikal–Khubsugul seismic reactivation in 2020–2023. The thermal state in the Kultuk water reservoir is estimated by determining thermophilic macrocomponents Si, Na, and microcomponent Li. Under compression of the crust, groundwater ascended from a shallow part of the reservoir of 0.5–0.9 km episodically heated up to 116°C by friction in a fault plane. During the Baikal–Khubsugul seismic reactivation, groundwater mainly upraised from the hydrogeodynamic center with frictional heating in a fault plane up to 99°C. The further monitoring of chemical hydrogeodynamics of the Kultuk reservoir may provide a forecast of seismic hazards in the central Baikal Rift System. [ABSTRACT FROM AUTHOR]

Copyright of Journal of Ecology & Rural Environment is the property of Journal of Ecology & Rural Environment Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Recent experimental studies highlighted the potential of thin-film crystalline silicon (Si) for high-efficiency solar cells. Using density functional theory, we investigated 2D Si thin films across various orientations, thicknesses, and surface structures to elucidate their structure–property relationships. Through surface-energy calculations and Wulff construction, we determined the crystal habit of Si, which aligns with available experimental observations. Electronic-structure calculations underscored the critical role of valence saturation on surfaces in enabling semiconducting behavior in Si thin films, essential for optical applications. From optical-absorption calculations, we identified the surface index exhibiting the highest absorption coefficients for thin films Si solar cell applications. [ABSTRACT FROM AUTHOR]

Selective area growth and epitaxial lateral overgrowth (ELOG) of semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN stripes are demonstrated on a trench patterned vicinal (001) Si substrate fabricated by a maskless photolithography‐based process. High precision alignment enables selective mask formation to one sidewall of the trench. Selective area growth of GaN stripes is conducted from the (111) plane sidewall of Si, and ELOG region reaches ≈13 μm. The ELOG GaN crystal is dislocation‐free at most areas. The semipolar GaN stripes with atomically flat surface morphology are uniformly obtained. Light‐emitting diode structures with InGaN/GaN multiple quantum wells are grown on the 13‐μm ELOG (11¯$1 \left(\right. \macr \left.\right)$01) GaN stripes and a single photoluminescence emission peaked at 485 nm is obtained, suggesting potential for the cost‐effective semipolar micro light‐emitting diode fabrication technologies. [ABSTRACT FROM AUTHOR]

BACKGROUND: Bioactive glass is a multifunctional synthetic composite material that releases active ions slowly and exhibits certain biological activities after affinity with tissues. Their versatility stems from the versatility of their preparation processes and components, allowing them to be applied in different clinical scenarios. OBJECTIVE: To review the main application forms, application fields of bioactive glass, as well as the influence of doping different elements on its function. METHODS: A literature search was conducted across WanFang Medical Database, CNKI Database, PubMed Database, and Web of Science Database, using the search terms “bioactive glass, slow-release ions, bone tissue engineering, composite scaffold, tissue regeneration and repair, biomedical engineering” in Chinese and English. The timeframe was limited from 2000 to 2023. Finally, 88 articles were included for review. RESULTS AND CONCLUSION: (1) In terms of application forms, bioactive glass can be fabricated as coatings, particles, bone cements, and scaffolds according to needs. Coatings have the potential to enhance the biological activity of implants, yet they are susceptible to instability as a result of degradation. Particles offer a viable solution for the repair of irregular bone defects; however, particles produced through traditional methods often possess limited functionality. Bone cement provides the benefits of minimal invasiveness and injectability, yet its application is restricted to smaller bone defects. Scaffolds exhibit excellent mechanical properties and are commonly used for larger-sized bone defects, yet they have limited toughness. (2) In terms of applications, bioactive glass can be used in a variety of tissue regeneration and repair and disease treatment fields, including dentistry, orthopedics, soft tissue engineering, and cancer. (3) In terms of element doping, the addition of specific elements to bioactive glass not only improves its mechanical properties but also endows it with special biological functions such as bioactivity, degradability, and antibacterial properties. (4) Biologically active glass is a versatile material that can be used in different forms and functions by adjusting the preparation process and element doping to meet various clinical needs in bone tissue engineering and is widely used in the field of biomedical engineering. [ABSTRACT FROM AUTHOR]

Silicon (Si) has attracted worldwide attention for its ultrahigh theoretical storage capacity (4200 mA h g−1), low mass density (2.33 g cm−3), low operating potential (0.4 V vs. Li/Li+), abundant reserves, environmentally benign nature, and low cost. It is a promising high-energy-density anode material for next-generation lithium-ion batteries (LIBs), offering a replacement for graphite anodes owing to the escalating energy demands in booming automobile and energy storage applications. Unfortunately, the commercialization of silicon anodes is stringently hindered by large volume expansion during lithiation–delithiation, the unstable and detrimental growth of electrode/electrolyte interface layers, sluggish Li-ion diffusion, poor rate performance, and inherently low ion/electron conductivity. These present major safety challenges lead to quick capacity degradation in LIBs. Herein, we present the synergistic effects of nanostructured silicon and SrTiO3 (STO) for use as anodes in Li-ion batteries. Si and STO nanoparticles were incorporated into a multiwalled carbon nanotube (CNT) matrix using a planetary ball-milling process. The mechanical stress resulting from the expansion of Si was transferred via the CNT matrix to the STO. We discovered that the introduction of STO can improve the electrochemical performance of Si/CNT nanocomposite anodes. Experimental measurements and electrochemical impedance spectroscopy provide evidence for the enhanced mobility of Li-ions facilitated by STO. Hence, incorporating STO into the Si@CNT anode yields promising results, exhibiting a high initial Coulombic efficiency of approximately 85%, a reversible specific capacity of ~800 mA h g−1 after 100 cycles at 100 mA g−1, and a high-rate capability of 1400 mA g−1 with a capacity of 800 mA h g−1. Interestingly, it exhibits a capacity of 350 mAh g−1 after 1000 lithiation and delithiation cycles at a high rate of 600 mA hg−1. This result unveils and sheds light on the design of a scalable method for manufacturing Si anodes for next-generation LIBs. [ABSTRACT FROM AUTHOR]

GaAs materials are widely used in plenty of fields such as field-effect transistors, lasers, photodetectors, etc. However, the electronic state structure of p-type dopant acceptor is much more complicated than that of n-type. In our experiments, we choose the element Be as the dopant acceptor. The doping concentration of the N-type GaAs thin film layer achieved 2.07 × 1018 cm−3 with a mobility of 2097 cm2/V.s at 1250 °C for the Si doping source, and the doping concentration of the P-type GaAs thin film reached 1.29 × 1017cm−3 with a mobility of 255.6 cm2/V.s at 800 °C for the Be doping source. [ABSTRACT FROM AUTHOR]

This research investigates the effect of silicon (Si) addition on the phase transformation behaviour of the Ni–Ti alloy. The Ni–Ti–Si alloys were fabricated with varying proportions of Si through a modified vacuum induction melting technique with argon backfilling. Scanning electron microscopy, X-ray diffraction and differential scanning calorimetry were done to analyse the microstructure, elemental composition, and phase transformation temperatures, respectively, to validate the effectiveness of this modified melting technique. The results indicate an increase in the phase transformation temperature with an increase in the Si content in the alloy mixture and the alloys were prepared with a very minimal amount of detrimental impurities. This technique helps to produce high-temperature shape memory alloys with utmost purity which helps in retaining their functional properties. The transformation temperatures observed from differential scanning calorimetry revealed that the Af temperature varies from 342.68 K to 379.95 K for 3 to 12% variation in Si content. This group of shape memory alloys have potential use as actuators in aircrafts and various other applications. [ABSTRACT FROM AUTHOR]

Abstract Cadmium (Cd) pollution is a serious threat to food safety and human health. Minimizing Cd uptake and enhancing Cd tolerance in plants are vital to improve crop yield and reduce hazardous effects to humans. In this study, we designed three Cd concentration stress treatments (Cd1: 0.20 mg·kg−1, Cd2: 0.60 mg·kg−1, and Cd3: 1.60 mg·kg−1) and two foliar silicon (Si) treatments (CK: no spraying of any material, and Si: foliar Si spraying) to conduct pot experiments on soil Cd stress. The results showed that spraying Si on the leaves reduced the Cd content in brown rice by 4.79–42.14%. Si application increased net photosynthetic rate (Pn) by 1.77–4.08%, stomatal conductance (Gs) by 5.27–23.43%, transpiration rate (Tr) by 2.99–20.50% and intercellular carbon dioxide (CO2) concentration (Ci) by 6.55–8.84%. Foliar spraying of Si significantly increased the activities of superoxide dismutase (SOD) and peroxidase (POD) in rice leaves by 9.84–14.09% and 4.69–53.09%, respectively, and reduced the content of malondialdehyde (MDA) by 7.83–48.72%. In summary, foliar Si spraying protects the photosynthesis and antioxidant system of rice canopy leaves, and is an effective method to reduce the Cd content in brown rice.

Mitochondrial quality control is finely tuned bymitophagy, the selective degradation of mitochondria through autophagy, and mitochondrial biogenesis. Removal of damaged mitochondria is essential to preserve cellular bioenergetics and prevent detrimental events such as sustained mitoROS production, pro-apoptotic cytochrome c release or mtDNA leakage. The array of tools available to study mitophagy is very limited but in constant development. Almost a decade ago, we developed a method to assess mitophagy flux using MitoTracker Deep Red in combination with lysosomal inhibitors. Now, using the novel tandem-fluorescence reporter mito-QC (mCherry-GFP-FIS1101-152) that allows to differentiate between healthy mitochondria (mCherry+GFP+) and mitolysosomes (mCherry+GFP-), we have developed a robust and quantitative method to assess mitophagy by flow cytometry. This approach has been validated in ARPE-19 cells using PINK1/Parkindependent (CCCP) and PINK1/Parkin-independent (DFP) positive controls and complementary techniques. Furthermore, we show that the mito-QC reporter can be multiplexed, especially if using spectral flow cytometry, to simultaneously study other cellular parameters such as viability or ROS production. Using this technique, we evaluated and characterized two prospective mitophagy inducers and further dissected their mechanism of action. Finally, using mito-QC reporter mice, we developed a protocol to measure mitophagy levels in the retina ex vivo. This novel methodology will propelmitophagy research forward and accelerate the discovery of novel mitophagy modulators. [ABSTRACT FROM AUTHOR]

A variety of strategies have been developed to enhance the cycling stability of Si-based anodes in lithium-ion batteries. Although significant progress has been made in enhancing the cycling stability of Si-based anodes, the low initial Coulombic efficiency (ICE) remains a significant challenge to their commercial application. Herein, pitch-based carbon (C) coated Si nanoparticles (NPs) were wrapped by graphene (G) to obtain Si@C/G composite with a small specific surface area of 11.3 m2 g−1, resulting in a high ICE of 91.2% at 500 mA g−1. Moreover, the integrated utilization of graphene and soft carbon derived from the low-cost petroleum pitch strongly promotes the electrical conductivity, structure stability, and reaction kinetics of Si NPs. Consequently, the synthesized Si@C/G with a Si loading of 54.7% delivers large reversible capacity (1191 mAh g−1 at 500 mA g−1), long cycle life over 200 cycles (a capacity retention of 87.1%), and superior rate capability (952 mAh g−1 at 1500 mA g−1). When coupled with a homemade LiNi0.8Co0.1Mn0.1O2 (NCM811) cathode in a full cell, it exhibits a promising cycling stability for 200 cycles. This work presents an innovative approach for the manufacture of Si-based anode materials with commercial application. [ABSTRACT FROM AUTHOR]

Commercial graphite anode has advantages such as low potential platform, high electronic conductivity, and abundant reserves. However, its theoretical capacity is only 372 mA h g−1. High-energy lithium-ion batteries have been a research hotspot. The Si anode has an extremely high specific capacity, but its application is hindered by defects such as large volume changes, poor electronic conductivity, and a small lithium-ion diffusion coefficient. Here, the Si/thermally reduced graphite oxide@carbon (Si/RGtO@C) composite was fabricated by electrostatic self-assembly followed by thermal treatment. The RGtO synergistic carbon coating layer can effectively compensate for the low electronic conductivity and buffer the volume expansion effect of the Si nanoparticles during charge/discharge cycles. The Si/RGtO@C anode demonstrated a significantly increased capacity compared to the RGtO. After 300 cycles, Si/RGtO@C kept a discharged capacity of 367.6 mA h g−1 at a high current density of 1.0 A g−1. The Si/RGtO@C anode shows an application potential for commercial high-energy lithium-ion batteries. [ABSTRACT FROM AUTHOR]

This chapter (Geoanalytical Metrology) is a contribution to the Geostandards and Geoanalytical Research Handbook of Rock and Mineral Analysis – an online textbook that is a fully revised and updated edition of Handbook of Silicate Rock Analysis, which was written by Philip J. Potts and published in 1987 by Blackie and Son (Glasgow). This second edition comprises chapters, written by prominent research scientists, designed to provide comprehensive overviews of the relevant techniques for the elemental characterisation of rocks and minerals. Chapters are designed to allow new practitioners to the field (including research students) to attain a comprehensive understanding of the theory, practice and capabilities of each technique, as well as being of benefit to established research geoanalysts. In addition to the content, chapter titles have been revised where appropriate to reflect progress in this field. Chapter 1, Part 1 (from Section 1 of the handbook dealing with fundamentals of measurement and instrument design) first sets out the overarching conventions that operate in analytical chemistry, including a description of the international organisations and systems that regulate the standards governing the discipline. This is followed by coverage of the statistical basis on which geoanalytical data sets are treated, analysed and interpreted, which summarises most of the relevant tests and terminology employed in this field. The methods by which the calibration of measured signals from instrumental techniques is tackled, followed by method validation, which covers aspects including measurement uncertainty, bias, precision and trueness. Sections detailing metrological traceability and quality management conclude this chapter. [ABSTRACT FROM AUTHOR]

In the present study, the minority carrier diffusion length (MCDL), determined by surface photovoltage spectroscopy measurements, is compared in n‐ and p‐type Si wafers after their oxidation under different conditions using various tools (horizontal and vertical furnaces, atomic layer deposition (ALD), low‐pressure chemical vapor deposition, and plasma‐enhanced chemical vapor deposition). It is shown that MCDL varies significantly depending on the design of furnaces, oxidation temperatures, the type of gases used before and during oxidation, and their flow ratios. The type and crystal growth method of Si wafers used for the oxidation also play a significant role and influence MCDL. Additionally, MCDL after the deposition of alumina layers using ALD techniques is found to be significantly larger compared to that observed after the thermal oxidation of Si. The larger values of MCDL after the ALD of Al2O3 are detected independent of temperature and precursors used for the deposition. The origin of different MCDL values after various oxidation processes, with an emphasis on the formation of electrically active defects in Czochralski (CZ)‐ and float‐zone (FZ)‐grown Si wafers is discussed. [ABSTRACT FROM AUTHOR]

In this study, the primary focus was on enhancing the performance of Photovoltaic devices by modifying the ETL and HTL transport layers. We conducted a comprehensive analysis of efficiency and fill factor variations resulting from adjustments in key device parameters, notably the active layer thickness. The HTL layer employed materials such as CdTe (Cadmium telluride) and CISSe (Copper indium sulfur selenide), while the ETL layer utilized CdS (Cadmium sulfide), ZnO (Zinc oxide), SnOx (Stannous oxalte), SnO2 (Tin oxide), and TiO2 (Titanium dioxide). Additionally, Silicon (Si) was incorporated into our structure. Our highest efficiency recorded was 27.38%, marking a significant achievement for our proposed cell design. In summary, our simulation results underscore the promising performance of the CdTe/CISSe/Si/CdS/ZnO structure, yielding an efficiency of 27.38%, an open-circuit voltage (Voc) of 0.8136V, a short-circuit current density (Jsc) of 41.17428 mA/cm², and a fill factor (FF) of 79.36%. The discussions presented herein suggest that our proposed Photovoltaic (PV) Solar Cell holds great potential for adequate performance and improved power conversion efficiency, making it a compelling choice for solar energy applications. [ABSTRACT FROM AUTHOR]

Among Al-Zn-Mg alloys, A7003 alloy is considered to be an excellent alloy from the viewpoint of weldability because it is an alloy with relatively low Zn and low Mg composition. In this paper, changes in mechanical properties and microstructure during aging treatment are investigated by the addition of Si in the Al-5.6 mass%Zn-0.75 mass%Mg alloy containing Cu, Mn, Zr and Fe. Cast billets of alloys with different Si contents (Si: 0.05 mass%, 0.15 mass%, and 0.30 mass%) were prepared, and these cast billets were homogenized and extruded. After extrusion, four aging treatments were performed: one step aging at 423K for 8 hours, and two step aging at 373K for 3 hours, 6 hours, and 9 hours, followed by 423K for 8 hours. The higher the amount of Si, the smaller the thickness of recrystallization layer near the inner surface and near the outer surface, and the smaller the existence rate of recrystallized grains in the cross section. After one step aging at 423K for 8 hours, Si: 0.05 mass% showed lower strength than Si: 0.15 mass% and Si: 0.30 mass%. On the other hand, two-step aging resulted in Si: 0.05 mass%, Si: 0.15 mass%, and Si: 0.30 mass% with similar strength. The low strength of Si: 0.05 mass% after one step aging at 423K for 8 hours is thought to be due to the coarse η phase, which was precipitated in the grain boundaries and grains. In Si: 0.15 mass% and Si: 0.30 mass%, Al(Mn,Fe)Si which formed during homogenization process is present in the grain boundaries and grains after extrusion. It is thought to suppress the generation of the precipitate of the coarse η phase in the aging at 423K for 8 hours, which is a condition that the coarse η phase is easy to generate. [ABSTRACT FROM AUTHOR]

Si has been considered as an appealing anode material for high-performance lithium-ion batteries due to its high theoretical capacity. However, the large volume variation limits its practical application. Herein, a binder-, conductive additive- and current collector-free Si/reduced graphene oxide film has been constructed via a simple thermal-reduction method. In the film, Si nanoparticles are encapsulated by reduced graphene oxide, which can accommodate the volume change of Si during cycling efficiently. When utilized as a negative electrode, the Si/reduced graphene oxide film has displayed a high reversible capacity of 1733.4 mAh g−1 after 50 cycles at 200 mA g−1. Importantly, the electrochemical impedance spectroscopy results suggest that the composite film possesses more efficient electrochemical reaction kinetics. The strategy reported in this work may supply a facile preparation route for other metal or metal oxides/reduced graphene oxide films. [ABSTRACT FROM AUTHOR]

Self-incompatibility (SI) is a crucial mechanism that prevents self-fertilization and inbreeding in flowering plants. Citrus exhibits SI regulated by a polymorphic S -locus containing an S-RNase gene and multiple S -locus F-box (SLF) genes. It has been documented that S-RNase functions as the pistil S determinant, but there is no direct evidence that the SLF genes closely linked with S-RNase function as pollen S determinants in Citrus. This study assembled the genomes of two pummelo (Citrus grandis) plants, obtained three novel complete and well-annotated S -haplotypes, and isolated 36 SLF or SLF-like alleles on the S -loci. Phylogenetic analysis of 138 SLFs revealed that the SLF genes were classified into 12 types, including six types with divergent or missing alleles. Furthermore, transformation experiments verified that the conserved S6-SLF7a protein can lead to the transition of SI to self-compatibility by recognizing non-self S8-RNase in 'Mini-Citrus' plants (S 7 S 8 and S 8 S 29 , Fortunella hindsii), a model plant for citrus gene function studies. In vitro assays demonstrated interactions between SLFs of different S haplotypes and the Skp1–Cullin1–F-box subunit CgSSK1 protein. This study provides direct evidence that SLF controls the pollen function in Citrus , demonstrating its role in the 'non-self recognition' SI system. [ABSTRACT FROM AUTHOR]

Copyright of Media Biznes Kultura is the property of Jagiellonian University Press and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Iron Steel Vanadium Titanium is the property of Iron Steel Vanadium Titanium Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Cadmium (Cd) pollution is a serious threat to food safety and human health. Minimizing Cd uptake and enhancing Cd tolerance in plants are vital to improve crop yield and reduce hazardous effects to humans. In this study, we designed three Cd concentration stress treatments (Cd1: 0.20 mg·kg−1, Cd2: 0.60 mg·kg−1, and Cd3: 1.60 mg·kg−1) and two foliar silicon (Si) treatments (CK: no spraying of any material, and Si: foliar Si spraying) to conduct pot experiments on soil Cd stress. The results showed that spraying Si on the leaves reduced the Cd content in brown rice by 4.79–42.14%. Si application increased net photosynthetic rate (Pn) by 1.77–4.08%, stomatal conductance (Gs) by 5.27–23.43%, transpiration rate (Tr) by 2.99–20.50% and intercellular carbon dioxide (CO2) concentration (Ci) by 6.55–8.84%. Foliar spraying of Si significantly increased the activities of superoxide dismutase (SOD) and peroxidase (POD) in rice leaves by 9.84–14.09% and 4.69–53.09%, respectively, and reduced the content of malondialdehyde (MDA) by 7.83–48.72%. In summary, foliar Si spraying protects the photosynthesis and antioxidant system of rice canopy leaves, and is an effective method to reduce the Cd content in brown rice. [ABSTRACT FROM AUTHOR]

Epitaxial buffer layers such as ceria (CeO2)/yttria-stabilized zirconia (YSZ) allow the direct integration of functional oxide single crystal thin films on silicon (Si). Microcracks in the buffer layer, often evolving from the large thermal tensile stress, are detrimental to the integration of high-quality complex oxide thin films on Si. In this study, we investigated the evolution of microcracks in sputter-grown epitaxial CeO2 layers by systematically varying the sputtering power and thickness of CeO2 thin films on YSZ single crystal (low thermal mismatch) and YSZ-buffered Si (high thermal mismatch) substrates. Using a plane stress model, we revealed that as the sputtering power increased, the epitaxial CeO2 thin films tended to be more compressively strained at the growth temperature. This could accommodate the tensile strain arising during cooling to room temperature, thereby suppressing the evolution of microcracks. Our result provides not only a method to suppress microcracks in the oxide heterostructure on Si, but also a tool to control their strain state, by controlling their growth parameters. [ABSTRACT FROM AUTHOR]

Recent studies show that zinc oxide (ZnO) nanostructures have promising potential as an absorbing material. In order to improve the optoelectronic properties of the initial system, this paper considers the process of adsorbing multilayer graphene-like ZnO onto a Si (111) surface. The density of electron states for two- and three-layer graphene-like zinc oxide on the Si (111) surface was obtained using the Vienna ab-initio simulation package by the DFT method. A computer model of graphene-like Zinc oxide on a Si (111)-surface was created using the DFT+U approach. One-, two- and three-plane-thick graphene-zinc oxide were deposited on the substrate. An isolated cluster of Zn3O3 was also considered. The compatibility of g-ZnO with the S (100) substrate was tested, and the energetics of deposition were calculated. This study demonstrates that, regardless of the possible configuration of the adsorbing layers, the Si/ZnO structure remains stable at the interface. Calculations indicate that, in combination with lower formation energies, wurtzite-type structures turn out to be more stable and, compared to sphalerite-type structures, wurtzite-type structures form longer interlayers and shorter interplanar distances. It has been shown that during the deposition of the third layer, the growth of a wurtzite-type structure becomes exothermic. Thus, these findings suggest a predictable relationship between the application method and the number of layers, implying that the synthesis process can be modified. Consequently, we believe that such interfaces can be obtained through experimental synthesis. [ABSTRACT FROM AUTHOR]