Search

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of HfOx-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of Ge2Sb2Te5 (GST) between HfOx and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the HfOx. Scanning thermal microscopy suggests that HfOx + GST devices have a wider heating region than control devices with only HfOx, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally enhanced HfOx + GST devices also have higher on/off ratio (>103) than control devices (<102) and a median set voltage lower by approximately 1 V (∼35%), with a corresponding reduction of the switching power. Our HfOx + GST RRAM shows 2× gradual switching range using fast (∼ns) identical pulse trains with amplitude less than 2 V. [ABSTRACT FROM AUTHOR]

Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here, we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS 2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS 2 and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that (1) ultrathin oxidized Al dopes MoS 2 n- type (>2 × 10 12 cm -2 ) without degrading its mobility, (2) Ag, Au, and Ni deposition causes varying levels of damage to MoS 2 (e.g. broadening Raman E' peak from <3 to >6 cm -1 ), and (3) Ti, Sc, and Y react with MoS 2 . Reactive metals must be avoided in contacts to monolayer MoS 2 , but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that (4) thin metals do not significantly strain MoS 2 , as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS 2 and broadly applicable to many other 2D semiconductors.

During αβ T cell development in the thymus, migration of newly selected CD4 + and CD8 + thymocytes into medullary areas enables tolerance mechanisms to purge the newly selected αβ TCR repertoire of autoreactive specificities. Thymic dendritic cells (DC) play key roles in this process and consist of three distinct subsets that differ in their developmental origins. Thus, plasmacytoid DC and Sirpα + conventional DC type 2 are extrathymically derived and enter into the thymus via their respective expression of the chemokine receptors CCR9 and CCR2. In contrast, although Sirpα - conventional DC type 1 (cDC1) are known to arise intrathymically from immature progenitors, the precise nature of such thymus-colonizing progenitors and the mechanisms controlling their thymus entry are unclear. In this article, we report a selective reduction in thymic cDC1 in mice lacking the chemokine receptor CCR7. In addition, we show that the thymus contains a CD11c + MHC class II - Sirpα - Flt3 + cDC progenitor population that expresses CCR7, and that migration of these cells to the thymus is impaired in Ccr7 -/- mice. Moreover, thymic cDC1 defects in Ccr7 -/- mice are mirrored in plt/plt mice, with further analysis of mice individually lacking the CCR7 ligands CCL21Ser ( Ccl21a -/- ) or CCL19 ( Ccl19 -/- ) demonstrating an essential role for CCR7-CCL21Ser during intrathymic cDC1 development. Collectively, our data support a mechanism in which CCR7-CCL21Ser interactions guide the migration of cDC progenitors to the thymus for correct formation of the intrathymic cDC1 pool., (Copyright © 2018 The Authors.)