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1. Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices

Author

Oguz Odabasi, Amir Ghobadi, Turkan Gamze Ulusoy Ghobadi, Yakup Unal, Gurur Salkim, Gunes Basar, Bayram Butun, Ekmel Ozbay, Odabaşı, Oğuz, Ghobadi, Amir, Ghobadi, Türkan Gamze Ulusoy, Ünal, Yakup, Salkım, Gurur, Başar, Güneş, Bütün, Bayram, and Özbay, Ekmel

Subjects
Surface roughness, Stabil15 ity, AlGaN/GaN HEMTs, Recessed 16 ohmic contacts, Electrical and Electronic Engineering, Ohmic contact, Annealing temperatures, Electronic, Optical and Magnetic Materials
Abstract

In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause crucial problems, such as threshold voltage ( Vth ) instability, current collapse, and high leakages. In this work, a low temperature ohmic contact process (630°C, 10 minutes) is adopted with recess etch, and contact resistances

Published
2022
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