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Your search keyword '"Syu, Yong-En"' showing total 16 results
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16 results on '"Syu, Yong-En"'

6. Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]

Author

Chang, Kuan-Chang, primary, Chen, Jung-Hui, additional, Tsai, Tsung-Ming, additional, Chang, Ting-Chang, additional, Huang, Syuan-Yong, additional, Zhang, Rui, additional, Chen, Kai-Huang, additional, Syu, Yong-En, additional, Chang, Geng-Wei, additional, Chu, Tian-Jian, additional, Liu, Guan-Ru, additional, Su, Yu-Ting, additional, Chen, Min-Chen, additional, Pan, Jhih-Hong, additional, Liao, Kuo-Hsiao, additional, Tai, Ya-Hsiang, additional, Young, Tai-Fa, additional, Sze, Simon M., additional, Ai, Chi-Fong, additional, Wang, Min-Chuan, additional, and Huang, Jen-Wei, additional

Published
2021
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8. Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes

Author

Pan, Chih-Hung, primary, Chang, Kuan-Chang, additional, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Zhang, Rui, additional, Liang, Shu-Ping, additional, Lin, Chih-Yang, additional, Chen, Min-Chen, additional, Chen, Po-Hsun, additional, Syu, Yong-En, additional, Huang, Hui-Chun, additional, and Sze, Simon M., additional

Published
2016
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9. Physical and chemical mechanisms in oxide-based resistance random access memory

Author

Chang, Kuan-Chang, primary, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Zhang, Rui, additional, Hung, Ya-Chi, additional, Syu, Yong-En, additional, Chang, Yao-Feng, additional, Chen, Min-Chen, additional, Chu, Tian-Jian, additional, Chen, Hsin-Lu, additional, Pan, Chih-Hung, additional, Shih, Chih-Cheng, additional, Zheng, Jin-Cheng, additional, and Sze, Simon M, additional

Published
2016
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10. Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

Author

Chen, Ji, primary, Chang, Kuan-Chang, additional, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Pan, Chih-Hung, additional, Zhang, Rui, additional, Lou, Jen-Chung, additional, Chu, Tian-Jian, additional, Wu, Cheng-Hsien, additional, Chen, Min-Chen, additional, Hung, Ya-Chi, additional, Syu, Yong-En, additional, Zheng, Jin-Cheng, additional, and Sze, Simon M., additional

Published
2015
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11. Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Author

Lin, Chih-Yang, primary, Chang, Kuan-Chang, additional, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Pan, Chih-Hung, additional, Zhang, Rui, additional, Liu, Kuan-Hsien, additional, Chen, Hua-Mao, additional, Tseng, Yi-Ting, additional, Hung, Ya-Chi, additional, Syu, Yong-En, additional, Zheng, Jin-Cheng, additional, Wang, Ying-Lang, additional, Zhang, Wei, additional, and Sze, Simon M., additional

Published
2015
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12. Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory

Author

Zhang, Wei, primary, Hu, Ying, additional, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Chang, Kuan-Chang, additional, Chen, Hsin-Lu, additional, Su, Yu-Ting, additional, Zhang, Rui, additional, Hung, Ya-Chi, additional, Syu, Yong-En, additional, Chen, Min-Chen, additional, Zheng, Jin-Cheng, additional, Lin, Hua-Ching, additional, and Sze, Simon M., additional

Published
2015
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13. Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

Author

Tseng, Yi-Ting, primary, Tsai, Tsung-Ming, additional, Chang, Ting-Chang, additional, Shih, Chih-Cheng, additional, Chang, Kuan-Chang, additional, Zhang, Rui, additional, Chen, Kai-Huang, additional, Chen, Jung-Hui, additional, Li, Yu-Chiuan, additional, Lin, Chih-Yang, additional, Hung, Ya-Chi, additional, Syu, Yong-En, additional, Zheng, Jin-Cheng, additional, and Sze, Simon M., additional

Published
2015
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14. Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

Author

Chu, Tian-Jian, primary, Tsai, Tsung-Ming, additional, Chang, Ting-Chang, additional, Chang, Kuan-Chang, additional, Pan, Chih-Hung, additional, Chen, Kai-Huang, additional, Chen, Jung-Hui, additional, Chen, Hsin-Lu, additional, Huang, Hui-Chun, additional, Shih, Chih-Cheng, additional, Syu, Yong-En, additional, Zheng, Jin-Cheng, additional, and Sze, Simon M., additional

Published
2014
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15. Hopping conduction properties of the Sn:SiO thin-film resistance random access memory devices induced by rapid temperature annealing procedure.

Author

Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liao, Kuo-Hsiao, Syu, Yong-En, and Sze, Simon

Subjects
HOPPING conduction, SILICA films, RANDOM access memory, ANNEALING of metals, ACTIVATION energy
Abstract

Bipolar switching properties and electrical conduction mechanism in Sn:SiO thin-film RRAM devices were investigated and discussed. To complete the resistive switching properties of the stannum doped into silicon oxide thin films, the RTA-treated Sn:SiO thin-film RRAM devices were investigated and discussed. In addition, the improvement qualities and electrical switching properties of the RTA-treated Sn:SiO thin-film RRAM devices were carried out XPS, FT-IR, and IV measurement. The ohmic conduction with metal-like behavior and hopping conduction dependent activation energy properties by the Arrhenius plot equation in LRS of the Sn:SiO thin films was investigated. The activation energy and hopping distance for the RTA-treated thin films were found to be 0.018 eV and 1.1 nm, respectively. For the compatibility with the IC processes, the RTA treatment was a promising method for the Sn:SiO thin-film RRAM nonvolatile memory applications. [ABSTRACT FROM AUTHOR]

Published
2015
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16. A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs

Author

Chen, Ching-En, Chang, Ting-Chang, You, Bo, Tsai, Jyun-Yu, Lo, Wen-Hung, Ho, Szu-Han, Liu, Kuan-Ju, Lu, Ying-Hsin, Hung, Yu-Ju, Tseng, Tseung-Yuen, Wu, James, Tsai, Wei-Kung, Chenge, Kuo-Yu, and Syu, Yong-En

Abstract

This paper introduces a method to determine the located region of trap position by the analysis of three-level random telegraph signal (RTS) in partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect-transistors. For the cases of two traps, the average time at the 2ndlevel (〈τ2〉) is composed of average emission time of one trap and average capture time of the other. Comparison and analysis of 〈τ2〉 curves varying with gate voltage in RTS measurements with and without interchanged source/drain can clarify the located regions of the two traps. Moreover, the simplified equations are also considered and used to confirm the trap positions.

Published
2015
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