16 results on '"Syu, Yong-En"'
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2. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
3. Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices
4. Physical and chemical mechanisms in oxide-based resistance random access memory
5. Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure
6. Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]
7. Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory
8. Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes
9. Physical and chemical mechanisms in oxide-based resistance random access memory
10. Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
11. Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory
12. Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory
13. Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
14. Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory
15. Hopping conduction properties of the Sn:SiO thin-film resistance random access memory devices induced by rapid temperature annealing procedure.
16. A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
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