1. Low-temperature technique of thin silicon ion implanted epitaxial detectors
- Author
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Giovanni Casini, Simone Valdré, Gabriele Pasquali, M. Teodorczyk, A. Chbihi, N. Le Neindre, Zbigniew Sosin, Mariano Vigilante, J.D. Frankland, P. Kulig, E. Bonnet, M. Guerzoni, Maurizio Bini, E. Scarlini, E. Vanzanella, Dariusz Lipiński, Bernard Borderie, A. Grzeszczuk, Z. Khabanowa, P. Edelbruck, M. Cinausero, M. Parlog, G. Spadaccini, Ł. Kordyasz, Andrea Stefanini, Alessandro Olmi, R. Bougault, K. Ga̧sior, M. Gajewski, J. Sarnecki, A.J. Kordyasz, A. Boiano, R. Alba, M.F. Rivet, D. Gruyer, M. Bruno, T. Twaróg, A. Zagojski, A. Brzozowski, G. Pastore, A. Meoli, Luca Morelli, T. Marchi, M. Kowalczyk, A. Bednarek, D. Santonocito, C. Maiolino, A. Ordine, K. Krzyżak, S. Serra, Y. Merrer, K. J. Tarasiuk, E. Vient, F. Salomon, Giacomo Poggi, H. Wodzińska, F. Gramegna, G. Tortone, W. Zipper, O. Lopez, Silvia Piantelli, Elio Rosato, Tomasz Kozik, G. Ademard, Sandro Barlini, Laboratoire de physique corpusculaire de Caen (LPCC), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Grand Accélérateur National d'Ions Lourds (GANIL), Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Institut de Physique Nucléaire d'Orsay (IPNO), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Fazia Collaboration, A. J., Kordyasz, N., Le Neindre, M., Parlog, G., Casini, R., Bougault, G., Poggi, A., Bednarek, M., Kowalczyk, O., Lopez, Y., Merrer, E., Vient, J. D., Frankland, E., Bonnet, A., Chbihi, D., Gruyer, B., Borderie, G., Ademard, P., Edelbruck, M. F., Rivet, F., Salomon, M., Bini, S., Valdré, E., Scarlini, G., Pasquali, G., Pastore, S., Piantelli, A., Stefanini, A., Olmi, S., Barlini, A., Boiano, Rosato, Elio, A., Meoli, A., Ordine, Spadaccini, Giulio, G., Tortone, Vigilante, Mariano, E., Vanzanella, M., Bruno, S., Serra, L., Morelli, M., Guerzoni, R., Alba, D., Santonocito, C., Maiolino, M., Cinausero, F., Gramegna, T., Marchi, T., Kozik, P., Kulig, T., Twaróg, Z., Sosin, K., Ga??sior, A., Grzeszczuk, W., Zipper, J., Sarnecki, D., Lipi??ski, H., Wodzi??ska, A., Brzozowski, M., Teodorczyk, M., Gajewski, A., Zagojski, K., Krzy??ak, K. J., Tarasiuk, Z., Khabanowa, Kordyasz, ?. ?., Normandie Université (NU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Physics ,Nuclear and High Energy Physics ,Silicon ,010308 nuclear & particles physics ,Detector ,Analytical chemistry ,chemistry.chemical_element ,[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex] ,Epitaxy ,01 natural sciences ,Particle detector ,Charged particle ,Ion ,Semiconductor detector ,Ion implantation ,chemistry ,0103 physical sciences ,[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det] ,Atomic physics ,010306 general physics - Abstract
A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (〈E α 〉 = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr (E = 35 A MeV) + 112Sn. The ΔE − E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.
- Published
- 2015
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