366 results on '"Tadjer, Marko J."'
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2. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates
3. Design of Ga2O3 Modulation Doped Field Effect Transistors
4. Assessment of the (010) $\beta$-Ga$_2$O$_3$ Surface and Substrate Specification
5. III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
6. Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management
7. Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces
8. Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
9. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
10. PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates
11. Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy
12. Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3.
13. Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3.
14. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates.
15. Contributors
16. Reduced-stress nanocrystalline diamond films for heat spreading in electronic devices
17. Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN
18. Preface
19. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
20. Diodes 1 : Vertical Geometry Ga2O3 Rectifiers
21. Phonon Properties : Phonon and Free Charge Carrier Properties in Monoclinic-Symmetry
22. Electrical Properties 4 : Band Offsets and Interface State Density Characterization of Dielectric/Ga2O3 Interfaces
23. Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films
24. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond.
25. Experimental determination of critical thickness limitations of (010)β -(AlxGa1−x)2O3 heteroepitaxial films
26. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging.
27. (Invited) NiO/ β-(Al x Ga1-x )2O3 /Ga2O3 Heterojunction Lateral Rectifiers with Reverse Breakdown Voltage > 7kV
28. Diodes 1
29. Electrical Properties 4
30. Phonon Properties
31. Optical characterization and thermal properties of CVD diamond films for integration with power electronics
32. Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films
33. Electrothermal performance of AlGaN/GaN lateral transistors with >10 μm thick GaN buffer on 200 mm diameter engineered substrates
34. NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV
35. Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
36. Effect of GaN/AlGaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates
37. Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films.
38. List of contributors
39. Ohmic contacts to gallium oxide
40. 2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension
41. Thermal management and packaging of wide and ultra‐wide bandgap power devices: a review and perspective
42. Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In$_{\text{2}}$O$_{\text{3}}$ FETs Toward Monolithic 3-D Integration
43. Thermal etching of nanocrystalline diamond films
44. Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates.
45. Toward gallium oxide power electronics
46. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
47. Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy
48. Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3
49. AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices
50. NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV.
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