237 results on '"Wu, Tian-Li"'
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2. Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies
3. Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
4. Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)
5. Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures
6. Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations
7. Design and analysis of high electron mobility transistor (HEMT) inspired III-V electro-optic modulator topologies
8. Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates
9. Impacts of material parameters on breakdown voltage and location for power MOSFETs
10. Inflencing Factors for Pulmonary Nodular Growth Predicted by Artificial Intelligence-based Follow-up
11. Investigations of Performances in RF GaN MIS-HEMTs and T-gate Schottky HEMTs with Leakage Current Analysis Using Emission Microscopy
12. Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications
13. Gate Leakage Current Analysis using Bayesian Deconvolution for Accurate Electron/Hole Trapping Characterizations in 4H-SiC MOSFETs
14. A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔV TH Transients in p-GaN Gate Power HEMTs
15. GaN-based mini-LED matrix applied to multi-functional forward lighting
16. Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
17. Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability
18. Stability of wireless power transfer using gamma-ray irradiated GaN power HEMTs
19. Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate
20. Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes
21. Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process
22. Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode
23. Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices
24. Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation
25. Male-specific Dmrt1 is a candidate sex determination gene in spotted scat (Scatophagus argus)
26. Demonstration of High Voltage (>2KV) GaN-on-QST power MIS-HEMTs with the Stable Dynamic On-resistance up to 1650 V
27. Comparisons of Performance and Reliability in 4H-SiC Tri-gate and Planar MOSFETs
28. Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment
29. ON-State Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs
30. Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs
31. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory
32. Roadmap of Ferroelectric Memories: From Discovery to 3D Integration
33. Threshold Voltage Instability Measurement Circuit for Power GaN HEMTs Devices
34. Thimet oligopeptidase and prolyl endopeptidase of spotted scat Scatophagus argus: characterization, tissue distribution, expression at different ovarian stages and down-regulation by estradiol
35. Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)
36. Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing
37. Demonstration of Differential Mode FeFET-Array for multi-precision storage and IMC applications
38. Demonstration of Large Polarization in Si-doped HfO2 Metal–Ferroelectric–Insulator-Semiconductor Capacitors with Good Endurance and Retention
39. DC/RF Performance and Reliability of 100-nm Gate Length AlGaN/GaN MIS-HEMTs with Different Thickness of in-situ SiN
40. Design of Variation-Tolerant 1F-1T Memory Array for Neuromorphic Computing
41. A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices
42. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors
43. A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔVTH Transients in p-GaN Gate Power HEMTs
44. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
45. Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator
46. Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT
47. Demonstration of Reverse Designs based on Hand-drawn Electrical Characteristics in GaN Power Devices using Graph Attention Networks
48. H-Bridge Derived Topology for Dynamic On-Resistance Evaluation in Power GaN HEMTs
49. Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
50. Using Graph Attention Network to Reversely Design GaN MIS-HEMTs Based on Hand-Drawn Characteristics
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