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Your search keyword '"Yan, Jian-Min"' showing total 98 results
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98 results on '"Yan, Jian-Min"'

1. Colossal magnetoresistance in Ti lightly-doped Cr2Se3 single crystals with layered structure

Author

Zhang, Shu-Juan, Yan, Jian-Min, Tang, F., Wu, Jin, Dong, Wei-Qi, Zhang, Dan-Wen, Luo, Fu-Sheng, Chen, Lei, Fang, Y., Zhang, Tao, Chai, Yang, Zhao, Weiyao, Wang, Xiaolin, and Zheng, Ren-Kui

Subjects
Condensed Matter - Materials Science
Abstract

Stoichiometric Cr2Se3 single crystals are particular layer-structured antiferromagnets which possess noncolinear spin configuration, weak ferromagnetic moments, moderate magnetoresistance (MR ~ 14.3%), and bad metallic conductivity below the antiferromagnetic phase transition temperature. Here, we report an interesting >16000% colossal magnetoresistance (CMR) effect in Ti (1.5 atomic percent) lightly-doped Cr2Se3 single crystals. Such a CMR is approximately 1143 times larger than that of the stoichiometric Cr2Se3 crystals and is rarely observed in layered antiferromagnets and is attributed to the frustrated spin configuration. Moreover, the Ti doping not only dramatically changes the electronic conductivity of the Cr2Se3 crystal from a bad metal to a semiconductor with a gap of ~ 15 meV, but also induces a change of the magnetic anisotropy of the Cr2Se3 crystal from strong out-of-plane to weak in plane. Further, magnetotransport measurements reveal that the low-field MR scales with the square of the reduced magnetization, which is a signature of CMR materials. The layered Ti:Cr2Se3 with CMR effect could be used as 2D heterostructure building blocks to provide colossal negative MR in spintronic devices.

Published
2023
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2. Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Author

Yan, Ming-Yuan, Li, Shuang-Shuang, Yan, Jian-Min, Xie, Li, Xu, Meng, Guo, Lei, Zhang, Shu-Juan, Gao, Guan-Yin, Wang, Fei-Fei, Zhang, Shan-Tao, Wang, Xiaolin, Chai, Yang, Zhao, Weiyao, and Zheng, Ren-Kui

Subjects
Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and volatile tunability limit its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of SOI via constructing ferroelectric Rashba architectures, i.e., 2D Bi2O2Se/PMN-PT ferroelectric field effect transistors. The experimentally observed weak antilocalization (WAL) cusp in Bi2O2Se films implies the Rashba-type SOI that arises from asymmetric confinement potential. Significantly, taking advantage of the switchable ferroelectric polarization, the WAL-to-weak localization (WL) transition trend reveals the competition between spin relaxation and dephasing process, and the variation of carrier density leads to a reversible and nonvolatile modulation of spin relaxation time and spin splitting energy of Bi2O2Se films by this ferroelectric gating. Our work provides a scheme to achieve nonvolatile control of Rashba SOI with the utilization of ferroelectric remanent polarization.

Published
2023
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3. Coexistence of Logarithmic and SdH Quantum Oscillations in Ferromagnetic Cr-doped Tellurium Single Crystals

Author

Zhang, Shu-Juan, Chen, Lei, Li, Shuang-Shuang, Zhang, Ying, Yan, Jian-Min, Tang, Fang, Fang, Yong, Fei, Lin-Feng, Zhao, Weiyao, Karel, Julie, Chai, Yang, and Zheng, Ren-Kui

Subjects
Condensed Matter - Materials Science
Abstract

We report the synthesis of transition-metal-doped ferromagnetic elemental single-crystal semiconductors with quantum oscillations using the physical vapor transport method. The 7.7 atom% Cr-doped Te crystals (Cr_Te) show ferromagnetism, butterfly-like negative magnetoresistance in the low temperature (< 3.8 K) and low field (< 0.15 T) region, and high Hall mobility, e.g., 1320 cm2 V-1 s-1 at 30 K and 350 cm2 V-1 s-1 at 300 K, implying that Cr_Te crystals are ferromagnetic elemental semiconductors. When B // c // I, the maximum negative MR is -27% at T = 20 K and B = 8 T. In the low temperature semiconducting region, Cr_Te crystals show strong discrete scale invariance dominated logarithmic quantum oscillations when the direction of the magnetic field B is parallel to the [100] crystallographic direction and show Landau quantization dominated Shubnikov-de Haas (SdH) oscillations for B // [210] direction, which suggests the broken rotation symmetry of the Fermi pockets in the Cr_Te crystals. The findings of coexistence of multiple quantum oscillations and ferromagnetism in such an elemental quantum material may inspire more study of narrow bandgap semiconductors with ferromagnetism and quantum phenomena., Comment: 25 pages, 25 figures

Published
2023
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5. Strain-mediated electric-field control of the electronic transport properties of 5d iridate thin films of SrIrO3.

Author

Li, Shuang-Shuang, Zhang, Ying, Ying, Jing-Shi, Wang, Zao-Cai, Yan, Jian-Min, Gao, Guan-Yin, Ye, Mao, and Zheng, Ren-Kui

Subjects
THIN films, ELECTRONIC control, ELECTRIC fields, FERROELECTRIC thin films, PHASE transitions, MAGNETORESISTANCE, PHOTOVOLTAIC effect
Abstract

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]

Published
2023
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16. Reversible and Nonvolatile Manipulation of the Spin-Orbit Interaction in Ferroelectric Field-Effect Transistors Based on a Two-Dimensional Bismuth Oxychalcogenide

Author

Yan, Ming-Yuan, primary, Li, Shuang-Shuang, additional, Yan, Jian-Min, additional, Xie, Li, additional, Xu, Meng, additional, Guo, Lei, additional, Zhang, Shu-Juan, additional, Gao, Guan-Yin, additional, Wang, Fei-Fei, additional, Zhang, Shan-Tao, additional, Wang, Xiaolin, additional, Chai, Yang, additional, Zhao, Weiyao, additional, and Zheng, Ren-Kui, additional

Published
2022
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18. Structural, electrical, and optical properties of RxBa1−xSnO3 (R = La, Nd, Sm, Er) transparent thin films.

Author

Li, Shuang-Shuang, Yan, Ming-Yuan, Fan, Fang-Yuan, Dong, Wei-Qi, Luo, Fu-Sheng, Zhang, Shu-Juan, Zhang, Ying, Chen, Lei, Yan, Jian-Min, Zhang, Shan-Tao, Wang, Fei-Fei, and Zheng, Ren-Kui

Subjects
THIN films, OPTICAL properties, INDIUM tin oxide, SAMARIUM, ATOMIC number, ELECTRICAL resistivity, RARE earth oxides
Abstract

Transparent conductive oxides have attracted extensive attentions as a promising candidate for next-generation display materials. As a substitute for indium tin oxide, BaSnO3-based materials have been widely investigated with the improvement of electrical resistivity and optical transparency. Here, the effects of diverse rare-earth ions (R = La, Nd, Sm, Er) doping on the structural, electrical, and optical properties of RxBa1−xSnO3 films are systematically studied. The rare-earth ion doping improves the crystallinity of epitaxial RxBa1−xSnO3 films. And a rule for electrical performance optimization is revealed that the resistivity and metal-semiconductor transition temperature increase with increased atomic number of rare-earth ions. Further optimized composition for LaxBa1−xSnO3 is realized at x = 5% with the minimum resistivity of 0.31 mΩ cm. Moreover, all RxBa1−xSnO3 films exhibit a high transparency of greater than 90% in the visible region. This work demonstrates that among these four rare-earth ion doping, La-doping is the most effective approach to optimize the comprehensive properties of BaSnO3-based transparent conductive films. [ABSTRACT FROM AUTHOR]

Published
2023
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19. Colossal Magnetoresistance in Ti Lightly Doped Cr2Se3 Single Crystals with a Layered Structure

Author

Zhang, Shu-Juan, primary, Yan, Jian-Min, additional, Tang, F., additional, Wu, Jin, additional, Dong, Wei-Qi, additional, Zhang, Dan-Wen, additional, Luo, Fu-Sheng, additional, Chen, Lei, additional, Fang, Y., additional, Zhang, Tao, additional, Chai, Yang, additional, Zhao, Weiyao, additional, Wang, Xiaolin, additional, and Zheng, Ren-Kui, additional

Published
2021
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20. Optoelectronic Coincidence Detection with Two‐Dimensional Bi 2 O 2 Se Ferroelectric Field‐Effect Transistors

Author

Yan, Jian‐Min, primary, Ying, Jing‐Shi, additional, Yan, Ming‐Yuan, additional, Wang, Zhao‐Cai, additional, Li, Shuang‐Shuang, additional, Chen, Ting‐Wei, additional, Gao, Guan‐Yin, additional, Liao, Fuyou, additional, Luo, Hao‐Su, additional, Zhang, Tao, additional, Chai, Yang, additional, and Zheng, Ren‐Kui, additional

Published
2021
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21. Tunable Transesterification of Dimethyl Carbonate with Ethanol on K2CO3/Al2O3Catalysts: Kinetic Modeling

Author

Liu, Chengwei, Chi, Ziyi, Yan, Yong, Lu, Zhenyang, Li, Xue-Gang, Yan, Jian-Min, Luo, Man, and Xiao, Wende

Abstract

The light alkyl carbonates are indispensable co-solvents of electrolytes for lithium-ion batteries. In this work, the tunable transesterification of dimethyl carbonate (DMC) with ethanol to co-produce ethyl methyl carbonate (EMC) and diethyl carbonate (DEC) was investigated based on an efficient catalytic system with the solid alkaline catalyst. It was found that the γ-Al2O3-supported K2CO3catalyst exhibited high activity for the transesterification reaction, with a tunable feature for the selectivities of EMC and DEC by changing the space velocity and feed ratio of DMC to ethanol at the temperature between 120 and 150 °C. According to the results of characterizations and activity tests, a synergistic mechanism was proposed. The reaction kinetic model was also established, which displayed good agreement with the experimental results.

Published
2023
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30. Optoelectronic Coincidence Detection with Two‐Dimensional Bi2O2Se Ferroelectric Field‐Effect Transistors.

Author

Yan, Jian‐Min, Ying, Jing‐Shi, Yan, Ming‐Yuan, Wang, Zhao‐Cai, Li, Shuang‐Shuang, Chen, Ting‐Wei, Gao, Guan‐Yin, Liao, Fuyou, Luo, Hao‐Su, Zhang, Tao, Chai, Yang, and Zheng, Ren‐Kui

Subjects
*COINCIDENCE circuits, *FIELD-effect transistors, *OPTOELECTRONIC devices, *VISIBLE spectra, *NONVOLATILE memory, *INDUCTIVE effect, *MAGNETIC control
Abstract

Information processing with optoelectronic devices provides an alternative way to efficiently process hybrid optical and electronic signals. Ferroelectric field‐effect transistors (FeFETs) can effectively respond to external optical and electrical stimuli by modulating their polarization states. Here, a 2D FeFET is demonstrated by the epitaxial growth of high‐quality 2D bismuth layered oxyselenide (Bi2O2Se) films on PMN‐PT(001) ferroelectric single‐crystal substrates. Upon switching the polarization direction of PMN‐PT, the authors realize in situ, reversible, and nonvolatile manipulation of the resistance of Bi2O2Se thin film (≈877%). The device simultaneously exhibits a polarization‐dependent photoresponse through visible light (λ = 405 nm) and infrared light (IR, λ = 980 nm) illumination. Combining optical stimuli with ferroelectric gating, it is demonstrated that the devices not only show nonvolatile memory and optoelectronic responses, but also show coincidence detection of visible and IR light. This work holds great potential in constructing new multiresponse and multifunction 2D‐FeFETs. [ABSTRACT FROM AUTHOR]

Published
2021
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31. Colossal Magnetoresistance in Ti Lightly Doped Cr2Se3Single Crystals with a Layered Structure

Author

Zhang, Shu-Juan, Yan, Jian-Min, Tang, F., Wu, Jin, Dong, Wei-Qi, Zhang, Dan-Wen, Luo, Fu-Sheng, Chen, Lei, Fang, Y., Zhang, Tao, Chai, Yang, Zhao, Weiyao, Wang, Xiaolin, and Zheng, Ren-Kui

Abstract

Stoichiometric Cr2Se3single crystals are particular layer-structured antiferromagnets, which possess a noncollinear spin configuration, weak ferromagnetic moments, moderate magnetoresistance (MR ∼14.3%), and poor metallic conductivity below the antiferromagnetic phase transition. Here, we report an interesting >16 000% colossal magnetoresistance (CMR) effect in Ti (1.5 atomic percent) lightly doped Cr2Se3single crystals. Such a CMR is approximately 1143 times larger than that of the stoichiometric Cr2Se3crystals and is rarely observed in layered antiferromagnets and is attributed to the frustrated spin configuration. Moreover, the Ti doping not only dramatically changes the electronic conductivity of the Cr2Se3crystal from a bad metal to a semiconductor with a gap of ∼15 meV but also induces a change in the magnetic anisotropy of the Cr2Se3crystal from strong out-of-plane to weak in-plane. Further, magnetotransport measurements reveal that the low-field MR scales with the square of the reduced magnetization, which is a signature of CMR materials. The layered Ti:Cr2Se3with the CMR effect could be used as two-dimensional (2D) heterostructure building blocks to provide colossal negative MR in spintronic devices.

Published
2021
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33. Room‐Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr‐Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid

Author

Xu, Meng, primary, Yan, Jian‐Min, additional, Chen, Ting‐Wei, additional, Xu, Zhi‐Xue, additional, Wang, Hui, additional, Guo, Lei, additional, Gao, Guan‐Yin, additional, Yan, Shu‐Ying, additional, Wang, Fei‐Fei, additional, Zhang, Jin‐Xing, additional, Zhao, Weiyao, additional, Li, Xiao‐Guang, additional, Luo, Hao‐Su, additional, and Zheng, Ren‐Kui, additional

Published
2019
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34. Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

Author

Yan, Jian-Min, primary, Xu, Meng, additional, Chen, Ting-Wei, additional, Yang, Ming-Min, additional, Liu, Fei, additional, Wang, Hui, additional, Guo, Lei, additional, Xu, Zhi-Xue, additional, Fan, Fang-Yuan, additional, Gao, Guan-Yin, additional, Dong, Si-Ning, additional, Li, Xiao-Guang, additional, Luo, Hao-Su, additional, Zhao, Weiyao, additional, and Zheng, Ren-Kui, additional

Published
2019
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35. Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystals

Author

Yan, Jian-Min, primary, Xu, Zhi-Xue, additional, Chen, Ting-Wei, additional, Xu, Meng, additional, Zhang, Chao, additional, Zhao, Xu-Wen, additional, Liu, Fei, additional, Guo, Lei, additional, Yan, Shu-Ying, additional, Gao, Guan-Yin, additional, Wang, Fei-Fei, additional, Zhang, Jin-Xing, additional, Dong, Si-Ning, additional, Li, Xiao-Guang, additional, Luo, Hao-Su, additional, Zhao, Weiyao, additional, and Zheng, Ren-Kui, additional

Published
2019
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38. Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching

Author

Zhao, Xu-Wen, primary, Dong, Si-Ning, additional, Gao, Guan-Yin, additional, Xu, Zhi-Xue, additional, Xu, Meng, additional, Yan, Jian-Min, additional, Zhao, Wei-Yao, additional, Liu, Yu-Kuai, additional, Yan, Shu-Ying, additional, Zhang, Jin-Xing, additional, Wang, Yu, additional, Lu, Hai-Zhou, additional, Li, Xiao-Guang, additional, Furdyna, J. K., additional, Luo, Hao-Su, additional, and Zheng, Ren-Kui, additional

Published
2018
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40. Nonvolatile Control of the Electronic Properties of In2–xCrxO3Semiconductor Films by Ferroelectric Polarization Charge

Author

Xu, Meng, Yan, Jian-Min, Guo, Lei, Wang, Hui, Xu, Zhi-Xue, Yan, Ming-Yuan, Lu, Yun-Long, Gao, Guan-Yin, Li, Xiao-Guang, Luo, Hao-Su, Chai, Yang, and Zheng, Ren-Kui

Abstract

A series of Cr-doped In2–xCrxO3(ICO) semiconductor thin films were epitaxially grown on (111)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3(PMN-0.29PT) single-crystal substrates by the pulsed laser deposition. Upon the application of an electric field to the PMN-0.29PT substrate along the thickness direction, we realized in situ, reversible, and nonvolatile control of the electronic properties and Fermi level of the films, which are manifested by abundant physical phenomena such as the n-type to p-type transformation, metal–semiconductor transition, metal–insulator transition, crossover of the magnetoresistance (MR) from negative to positive, and a large nonvolatile on-and-off ratio of 5.5 × 104% at room temperature. We also strictly disclose that both the sign and the magnitude of MR are determined by the electron carrier density of ICO films, which could modify the s–dexchange interaction and weak localization effect. Our results demonstrate that the ferroelectric gating approach using PMN-PT can be utilized to gain deeper insight into the carrier-density-related electronic properties of In2O3-based semiconductors and provide a simple and energy efficient way to construct multifunctional devices which can utilize the unique properties of composite materials.

Published
2024
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42. Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

Author

Xu, Zhi-Xue, primary, Yan, Jian-Min, additional, Xu, Meng, additional, Guo, Lei, additional, Chen, Ting-Wei, additional, Gao, Guan-Yin, additional, Dong, Si-Ning, additional, Zheng, Ming, additional, Zhang, Jin-Xing, additional, Wang, Yu, additional, Li, Xiao-Guang, additional, Luo, Hao-Su, additional, and Zheng, Ren-Kui, additional

Published
2018
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45. Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure

Author

Zhao, Xu-Wen, primary, Gao, Guan-Yin, additional, Yan, Jian-Min, additional, Chen, Lei, additional, Xu, Meng, additional, Zhao, Wei-Yao, additional, Xu, Zhi-Xue, additional, Guo, Lei, additional, Liu, Yu-Kuai, additional, Li, Xiao-Guang, additional, Wang, Yu, additional, and Zheng, Ren-Kui, additional

Published
2018
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47. Progresses of magnetoelectric composite films based on PbMg1/3Nb2/3O3-PbTiO3 single-crystal substrates

Author

Xu Zhi-Xue, Guo Lei, Zheng Ren-Kui, Xu Meng, Yan Jian-Min, and Li Xiao-Guang

Subjects
Crystallography, Materials science, General Physics and Astronomy, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 0210 nano-technology, 01 natural sciences, Single crystal, 0104 chemical sciences
Abstract

Owing to the rapid development of microelectronic technology,higher requirements are raised for miniaturization, intellectualization,sensitivity,reliability,low-power consumption and versatile functions of electromagnetic functional devices,but conventional block magnetic or electrical functional materials cannot meet those requirements mentioned above any longer.Layered magnetoelectric composites,by contrast,have ferroelectric,ferromagnetic and magnetoelectric properties,so they are possible to satisfy these demands above and be applied to the next-generation magnetoelectric functional devices.Layered magnetoelectric composites not only have rich physical phenomena and effects,but also possess broad application prospects in weak magnetic field detectors,multi-state memories,electric-write/magnetic-read memories,electrically tunable filters,phase shifters,antennas,etc,which have attracted extensive attention of material scientists and physicists.Among layered magnetoelectric composites,the functional thin film/ferroelectric single crystal heterostructures have aroused increasingly interest due to their simple preparation method,flexible structural design,effective electric field control and low power consumption.Currently,because of the excellent ferroelectric and piezoelectric properties of the (1 -x) PbMg1/3Nb2/3O3-xPbTiO3(PMN-PT) single crystal,the functional thin film/PMN-PT single crystal heterostructure has become one of the hot research topics in the multiferroic composite thin film material field.On this research topic,Chinese scientists have made their own significant contributions to the research of functional thin film/PMN-PT single crystal heterojunction.So far,researchers have built multiple types of thin film/PMN-PT heterostructures,such as manganese oxide/PMN-PT,ferrite/PMN-PT,ferromagnetic metal/PMN-PT,dilute magnetic semiconductor/PMN-PT,luminescent material/PMN-PT,two-dimensional material/PMN-PT,multi-layer film/PMN-PT,superconductive material/PMN-PT,etc.,and they have made great achievements in both theoretical and experimental studies.In this review,we summarize the research progress of magnetoelectric composite thin films based on PMN-PT single crystal substrates in the last decade.We first briefly describe the current status of articles related to functional film/PMN-PT heterostructures.Then we introduce the phase diagram and electric-field-induced strain properties of the PMN-PT single crystal around the morphotropic phase boundary.We also classify the heterostructures according to different categories of functional thin film materials and discuss the representative research findings of each category in the past few years.Our discussion focuses on the magnetoelectric properties of materials and the intrinsic physical mechanism.Finally,we also discuss the scientific problems to be solved and predict the possible application directions in the future.

Published
2018

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