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Othematoma is a condition in which blood collects beneath the perichondral layer of the pinna. Recurrent auricular hematoma can be a challenging medical problem, with complications resulting in ear deformity, therefore, appropriate management is important. Improper treatment can result in a deformity known as ‘cauliflower ear’ or ‘wrestler’s ear.’ We report a case of othematoma that was inappropriately treated and present a review of current treatment options.

Timely diagnosis and identification of etiology of pediatric mild-to-moderate sensorineural hearing loss (SNHL) are both medically and socioeconomically important. However, the exact etiologic spectrum remains uncertain. We aimed to establish a genetic etiological spectrum, including copy-number variations (CNVs) and efficient genetic testing pipeline, of this defect. A cohort of prospectively recruited pediatric patients with mild-to-moderate nonsyndromic SNHL from 2014 through 2018 (n = 110) was established. Exome sequencing, multiplex ligation-dependent probe amplification (MLPA), and nested customized polymerase chain reaction (PCR) for exclusion of a pseudogene, STRCP, from a subset (n = 83) of the cohort, were performed. Semen analysis was also performed to determine infertility (n = 2). Genetic etiology was confirmed in nearly two-thirds (52/83 = 62.7%) of subjects, with STRC-related deafness (n = 29, 34.9%) being the most prevalent, followed by MPZL2-related deafness (n = 9, 10.8%). This strikingly high proportion of Mendelian genetic contribution was due particularly to the frequent detection of CNVs involving STRC in one-third (27/83) of our subjects. We also questioned the association of homozygous continuous gene deletion of STRC and CATSPER2 with deafness–infertility syndrome (MIM61102). Approximately two-thirds of sporadic pediatric mild-to-moderate SNHL have a clear Mendelian genetic etiology, and one-third is associated with CNVs involving STRC. Based on this, we propose a new guideline for molecular diagnosis of these children.

The slim modiolar electrode has been reported to ensure better modiolar proximity than previous conventional perimodiolar electrodes and consistently high scala tympani localization. Nonetheless, variability in modiolar proximity exists even among slim modiolar electrodes, still leaving room for further improvement of modiolar proximity, which may positively affect functional outcomes. Given this, the pull-back maneuver was reported to increase the modiolar proximity of slim modiolar electrodes in a cadaveric study, but in vivo repositioning effects remain to be established. Here we identified that the pull-back maneuver led to better modiolar proximity than conventional insertion while maintaining a similar angular insertion depth. Notably, the reduced electrode-modiolus distance from the pull-back maneuver was associated with significantly lower impedances across electrodes postoperatively as well as reduced intraoperative electrophysiological thresholds than conventional insertion. Among adult cochlear implant recipients, this maneuver resulted in significantly better sentence recognition scores at three months postoperatively when compared to those with a conventional insertion; however, this benefit was not observed at later intervals. Collectively, slim modiolar electrodes with the pull-back maneuver further enhance the modiolar proximity, possibly leading to better open-set sentence recognition, at least in the early postoperative stage.

Purpose To report on our experience with the slim modiolar electrode (SME) especially focusing on the wide range of etiologies including inner ear anomalies, tumors, ossifications, and even revision surgeries. Methods All the cochlear implantation cases performed from June 2018 to September 2019 by a single surgeon was prospectively recruited. The molecular/radiological etiology of hearing loss, intraoperative outcomes, and radiographic studies of cases where the SME was implanted was reviewed to evaluate compatibility of SME for the wide range of etiologies. For cases where SME replaced the other electrode as a revision, audiologic assessment was also made. Results Among the 99 ears implanted during the study period, the SME was successfully implanted in 86 ears. These SME cases comprised inner ear anomaly/cochear nerve deficiency (n = 21) including cochlear hypoplasia type IV with the modiolus, intracochlear schwannoma (n = 1), far advanced otosclerosis (n = 1) and 7 revision cases. The SME was successfully used in 7 revision surgeries to replace the existing electrode. Shorter spiral diameter and decreased intracochlear position index for SME was found compared with their previous electrodes. Four out of the 6 patients who received revision implantation showed better speech perception after their surgeries. Conclusion The SME can be implanted in any cases unless the integrity of the modiolus is totally compromised. Due to its slim design and tight modiolar-hugging feature, good functional outcome can also be anticipated. Additionally, it is suitable for revision surgeries possibly allowing better hearing outcomes which may be attributed to its closer proximity to the modiolus.

We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage window of 0.76 V with a programming/erasing time of ${1}~\mu \text{s}$ in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 $\mu \text{A}$ and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations.

OBJECTIVE To investigate the effects of cavitating lesions involving the internal auditory canal (IAC) in subjects with cochlear otosclerosis with regard to poststapedotomy hearing outcome. STUDY DESIGN Retrospective study. SETTING Tertiary referral center. PATIENTS A retrospective chart review of 134 subjects with otosclerosis treated from January 2011 to June 2017 at Seoul National University Bundang Hospital was conducted. Sixteen subjects (23 ears) with temporal bone computed tomography (TBCT)-confirmed cochlear otosclerosis who underwent stapedotomy were included in the study. MAIN OUTCOME MEASURES Pure tone audiometry (PTA) (i.e., air and bone conduction; AC and BC, respectively) thresholds and air-bone gap (ABG), measured at 6 months postoperatively were compared between cochlear otosclerosis with and without IAC involvement (IAC group and non-IAC group, respectively). RESULTS A total of 14 of 23 ears showed involvement of the IAC. There were no significant differences in age, side of otosclerosis, or preoperative hearing threshold between the two groups. The mean postoperative AC and BC thresholds and ABG of the IAC group were significantly poorer (45.7 dB, 33.8 dB, and 11.8 dB, respectively) than those of the nonIAC group (24.1 dB, 20.0 dB, and 4.1 dB, respectively). CONCLUSIONS Cochlear otosclerosis with cavitating lesions involving the IAC showed significantly poorer postoperative audiological outcomes than those without any cavitating lesion. Cavitation extending to the IAC may act as a third window providing a route for sound energy shunting, and thus precluding successful hearing outcome in some subjects with cavitating otosclerosis after stapedotomy.

Tinnitus has traditionally been considered an otologic disorder; however, recent advances in auditory neuroscience have shifted investigations toward the brain. The Bayesian brain model explains tinnitus as an auditory phantom percept. According to the model, the brain works to reduce environmental uncertainty, and thus the absence of auditory information due to hearing loss may cause auditory phantom percepts, i.e., tinnitus. As in animal studies, our recent human observational study revealed the absence of ipsilesional tinnitus in subjects with congenital single-sided deafness, suggesting that auditory experience is a prerequisite for the generation of tinnitus. Prompted by anecdotal cases, we hypothesized that subjects with acquired hearing loss would not develop tinnitus if their duration of auditory experience was not sufficiently long. We retrospectively enrolled 22 subjects with acquired asymmetric hearing loss and unilateral tinnitus in better ear (TBE). Twenty-two hearing threshold-matched controls with tinnitus in worse ear (TWE) were selected from our database of tinnitus patients. All 22 TBE subjects reported that their acquired hearing loss developed before the age of 20, and the reported duration of auditory deprivation in the ear without tinnitus in the TBE group was significantly longer than that of the TWE group. In other words, the TBE group with limited auditory experience in the worse ear did not develop tinnitus in the worse ear while subjects with enough auditory experiences in the worse ear developed ipsilesional tinnitus in the TWE group. These preliminary results support our hypothesis that both auditory experience itself, and an individually variable critical duration of auditory deprivation, are prerequisites for the generation of tinnitus.

BACKGROUND Despite the increasing prevalence of hearing loss, the cost and psychological barriers to the use of hearing aids may prevent their use in individuals with hearing loss. Patients with hearing loss can benefit from smartphone-based hearing aid apps (SHAAs), which are smartphone apps that use a mobile device as a sound amplifier. OBJECTIVE The aim of this study is to determine how ear, nose, and throat outpatients perceive SHAAs, analyze the factors that affect their perceptions, and estimate the costs of an annual subscription to an app through a self-administered questionnaire survey of smartphone users and hearing specialists. METHODS This study used a cross-sectional, multicenter survey of both ear, nose, and throat outpatients and hearing specialists. The questionnaire was designed to collect personal information about the respondents and their responses to 18 questions concerning SHAAs in five domains: knowledge, needs, cost, expectations, and information. Perception questions were rated on a scale of 1 (strongly disagree) to 5 (strongly agree). Questions about the expected cost of SHAAs were included in the questionnaire distributed to hearing experts. RESULTS Among the 219 smartphone users and 42 hearing specialists, only 8 (3.7%) respondents recognized SHAAs, whereas 18% (47/261) of respondents reported considering the use of an assistive device to improve their hearing capacity. The average perception score was 2.81 (SD 1.22). Among the factors that shaped perceptions of SHAAs, the needs category received the lowest scores (2.02, SD 1.42), whereas the cost category received the highest scores (3.29, SD 1.14). Age was correlated with the information domain (PPP=.02) and was higher than the prices expected by hearing specialists (P CONCLUSIONS Outpatients expected SHAAs to cost more than hearing specialists. However, the perception of the SHAA was relatively low. In this regard, enhanced awareness is required to popularize SHAAs.

Tinnitus has traditionally been considered an otologic disorder; however, recent advances in auditory neuroscience have shifted investigations toward the brain. The Bayesian brain model explains tinnitus as an auditory phantom percept. According to the model, the brain works to reduce environmental uncertainty, and thus the absence of auditory information due to hearing loss may cause auditory phantom percepts, i.e., tinnitus. As in animal studies, our recent human observational study revealed the absence of ipsilesional tinnitus in subjects with congenital single-sided deafness, suggesting that auditory experience is a prerequisite for the generation of tinnitus. Prompted by anecdotal cases, we hypothesized that subjects with acquired hearing loss would not develop tinnitus if their duration of auditory experience was not sufficiently long. We retrospectively enrolled 22 subjects with acquired asymmetric hearing loss and unilateral tinnitus in better ear (TBE). Twenty-two hearing threshold-matched controls with tinnitus in worse ear (TWE) were selected from our database of tinnitus patients. All 22 TBE subjects reported that their acquired hearing loss developed before the age of 20, and the reported duration of auditory deprivation in the ear without tinnitus in the TBE group was significantly longer than that of the TWE group. In other words, the TBE group with limited auditory experience in the worse ear did not develop tinnitus in the worse ear while subjects with enough auditory experiences in the worse ear developed ipsilesional tinnitus in the TWE group. These preliminary results support our hypothesis that both auditory experience itself, and an individually variable critical duration of auditory deprivation, are prerequisites for the generation of tinnitus.

Background Despite the increasing prevalence of hearing loss, the cost and psychological barriers to the use of hearing aids may prevent their use in individuals with hearing loss. Patients with hearing loss can benefit from smartphone-based hearing aid apps (SHAAs), which are smartphone apps that use a mobile device as a sound amplifier. Objective The aim of this study is to determine how ear, nose, and throat outpatients perceive SHAAs, analyze the factors that affect their perceptions, and estimate the costs of an annual subscription to an app through a self-administered questionnaire survey of smartphone users and hearing specialists. Methods This study used a cross-sectional, multicenter survey of both ear, nose, and throat outpatients and hearing specialists. The questionnaire was designed to collect personal information about the respondents and their responses to 18 questions concerning SHAAs in five domains: knowledge, needs, cost, expectations, and information. Perception questions were rated on a scale of 1 (strongly disagree) to 5 (strongly agree). Questions about the expected cost of SHAAs were included in the questionnaire distributed to hearing experts. Results Among the 219 smartphone users and 42 hearing specialists, only 8 (3.7%) respondents recognized SHAAs, whereas 18% (47/261) of respondents reported considering the use of an assistive device to improve their hearing capacity. The average perception score was 2.81 (SD 1.22). Among the factors that shaped perceptions of SHAAs, the needs category received the lowest scores (2.02, SD 1.42), whereas the cost category received the highest scores (3.29, SD 1.14). Age was correlated with the information domain (P Conclusions Outpatients expected SHAAs to cost more than hearing specialists. However, the perception of the SHAA was relatively low. In this regard, enhanced awareness is required to popularize SHAAs.

OBJECTIVES Recent studies have shown that cochlear duct length (CDL) varies among individuals and could significantly influence the final position of the electrode and its trajectory in the cochlea. Given this, we hypothesized that the degree of modiolar proximity of novel slim modiolar electrodes, such as CI532 and CI632, can also be affected by CDL. To test this hypothesis, we retrospectively evaluated individual CDL to determine if there is any significant correlation of CDL with degree of modiolar proximity. METHODS Fifty-one ears from 38 subjects implanted with slim modiolar electrodes by a single surgeon through the round window approach using the pull-back technique were included. Our cohort was classified according to the deafness onset (congenital versus postlingual) and the degree of modiolar proximity (less versus tight) with reference to the spiral diameter made by the slim modiolar electrodes in situ on transorbital x ray. We then analyzed the CDL and its metrics using a readily available surgical preplanning tool (OTOPLAN) to obtain comparable data. RESULTS Among 30 ears associated with congenital deafness, 9 ears (30%) showed less modiolar proximity, while none of the 21 ears from 19 subjects with postlingual deafness exhibited "less modiolar proximity" based on our criteria. In this study, CDL showed significant variation among subjects. Importantly, a significant inverse correlation between spiral diameter and CDL (ρ = -0.581, p < 0.001) was found, showing that shorter CDLs have longer spiral diameter and less modiolar proximity. Moreover, further pull-back technique characterized by pulling out the electrode a little bit more in cases with shorter CDL, if not always, exhibited tighter modiolar proximity. CONCLUSION A preponderance of less modiolar proximity of the electrode was observed exclusively among congenital deafness cases, demonstrated by a less tight spiral configuration even under the pull-back technique. Our data suggest that shorter CDL is associated with a less tight spiral configuration of slim modiolar electrodes postoperatively. Depending on the insertion technique, the differential degree of modiolar proximity of slim modiolar electrodes can be alleviated in cases with short CDL, which justifies cochlear duct length-based customized insertion of slim modiolar electrodes.

Background and objectives: We review the intraoperative findings and postoperative outcomes of ossiculoplasty in subjects with second pharyngeal arch (SPA)-derived ossicular anomalies. We summarize potential intraoperative complications and recommend precautions that may reduce the risk of fracture. Materials and Methods: Twenty-four patients with SPA-derived ossicular anomalies were included, and pre- and postoperative audiometric results were compared. Results: The mean air conduction threshold (56.0 &plusmn, 12.4 dB HL) was significantly improved 1 month (27.6 &plusmn, 10.1 dB HL) and 6 months (23.8 &plusmn, 13.2 dB HL) after surgery (p &lt, 0.001). The preoperative air&ndash, bone gap (ABG) (40.4 &plusmn, 7.4 dB HL) was significantly decreased at 1 month (15.1 &plusmn, 5.9 dB HL) and 6 months (11.3 &plusmn, 8.9 dB HL) postoperation. ABG closure was successful (&lt, 20 dB HL) in 21 (87.5%) patients 6 months after surgery. Intraoperative footplate fractures occurred in 3 of 24 patients. The fractures were managed successfully, and the ABG closure was successful in all cases. Conclusions: The stapes footplate is likely to be relatively thin in subjects with SPA-derived ossicular anomalies because the footplate is partially or totally derived from the SPA. Thus, a fragile footplate should be expected, and care is needed when handling the footplate. However, when complications are overcome, the audiological outcomes are excellent in most cases.

Timely diagnosis and identification of etiology of pediatric mild-to-moderate sensorineural hearing loss (SNHL) are both medically and socioeconomically important. However, the exact etiologic spectrum remains uncertain. We aimed to establish a genetic etiological spectrum, including copy-number variations (CNVs) and efficient genetic testing pipeline, of this defect.A cohort of prospectively recruited pediatric patients with mild-to-moderate nonsyndromic SNHL from 2014 through 2018 (n = 110) was established. Exome sequencing, multiplex ligation-dependent probe amplification (MLPA), and nested customized polymerase chain reaction (PCR) for exclusion of a pseudogene, STRCP, from a subset (n = 83) of the cohort, were performed. Semen analysis was also performed to determine infertility (n = 2).Genetic etiology was confirmed in nearly two-thirds (52/83 = 62.7%) of subjects, with STRC-related deafness (n = 29, 34.9%) being the most prevalent, followed by MPZL2-related deafness (n = 9, 10.8%). This strikingly high proportion of Mendelian genetic contribution was due particularly to the frequent detection of CNVs involving STRC in one-third (27/83) of our subjects. We also questioned the association of homozygous continuous gene deletion of STRC and CATSPER2 with deafness-infertility syndrome (MIM61102).Approximately two-thirds of sporadic pediatric mild-to-moderate SNHL have a clear Mendelian genetic etiology, and one-third is associated with CNVs involving STRC. Based on this, we propose a new guideline for molecular diagnosis of these children.

In this study, we propose complementary metal-oxide−semiconductor (CMOS) NOR logic gates consisting of silicon nanowire (NW) arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect transistors (NWFETs) in series and two n-channel NWFETs in parallel is constructed to operate a two-input CMOS NOR logic gate. The NOR logic gates operate at a low supply voltage of 1 V with a rail-to-rail logic swing and a high voltage gain of approximately −3.0. The exact NOR logic functionality is achieved owing to the superior electrical characteristics of the well-aligned p- and n-NWFETs, which are obtained using conventional Si-based CMOS technology. Moreover, the NOR logic gates exhibit stable characteristics and have good mechanical properties. The proposed bendable NW CMOS NOR logic gates are promising building blocks for future bendable integrated electronics.

In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics.

Delivery of substances into the inner ear via local routes is increasingly being used in clinical treatment. Studies have focused on methods to increase permeability through the round window membrane (RWM) and enhance drug diffusion into the inner ear. However, the clinical applications of those methods have been unclear and few studies have investigated the efficacy of methods in an inner ear injury model. Here, we employed the medium chain fatty acid caprate, a biologically safe, clinically applicable substance, to modulate tight junctions of the RWM. Intratympanic treatment of sodium caprate (SC) induced transient, but wider, gaps in intercellular spaces of the RWM epithelial layer and enhanced the perilymph and cochlear concentrations/uptake of dexamethasone. Importantly, dexamethasone co–administered with SC led to significantly more rapid recovery from noise-induced hearing loss at 4 and 8 kHz, compared with the dexamethasone-only group. Taken together, our data indicate that junctional modulation of the RWM by SC enhances dexamethasone uptake into the inner ear, thereby hastening the recovery of hearing sensitivity after noise trauma.

In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively—as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)—according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I–V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10−14 A/μm and a high ION/IOFF of approximately 108, under the n-TFET operation mode.

In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n+-p-n+ silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an on/off current ratio of ~105 and steep subthreshold swing (~5 mV/dec) but also reliable SRAM characteristics. The SRAM characteristics originate from the positive feedback loops in the SiNW FETs generated by weak impact ionization. This paper describes in detail the operating mechanism of our device and demonstrates the potential of bendable SiNW FETs for future SRAM applications.

In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high I on/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties.

In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ∼0.2 nW (or ∼6.6 pW). The low-power inverting operation with a voltage gain of ∼18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and −0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties.

In this study, we propose a novel combination of tunneling field-effect transistors (TFETs) with asymmetrically doped p+-i-n+ silicon nanowire (SiNW) channels on a bendable substrate. The combination of two n-channel SiNW-TFETs (NWTFETs) in parallel and two p-channel NWTFETs in series operates as a two-input NOR logic gate. The component NWTFETs with the n- and p-channels exhibit subthreshold swings (SSs) of 69 and 53 mV·dec−1, respectively, and the on/off current ratios are ~106. The NOR logic operation is sustainable and reproducible for up to 1,000 bending cycles with a narrow transition width of ~0.26 V. The mechanical bendability of the bendable NWTFETs shows that they are stable and have good fatigue properties. To the best of our knowledge, this is the first study on the electrical and mechanical characteristics of a bendable NOR logic gate composed of NWTFETs.

Display Omitted Si nanowires are fabricated by fully CMOS-compatible top-down route.Ring oscillator is fabricated on the polyethersulphone (PES) flexible substrate.We report a flexible ring oscillator which features 1-V operation.Ring oscillator generated a sinusoidal wave with a frequency of ~6.6MHz. In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36×104 and 1.46×105, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ~6.6MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7%. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.

In this paper, we describe the feedback and tunneling operations of a dual top gate field-effect transistor (FET) with a p

In this study, we examine the electrical characteristics of complementary metal-oxide-semiconductor (CMOS) inverters with silicon nanowire (SiNW) channels on transparent substrates under illumination. The electrical characteristics vary with the wavelength and power of light due to the variation in the generation rates of the electric-hole pairs. Compared to conventional optoelectronic devices that sense the on/off states by the variation in the current, our device achieves the sensing of the on/off states with more precision by using the voltage variation induced by the wavelength or intensity of light. The device was fabricated on transparent substrates to maximize the light absorption using conventional CMOS technologies. The key difference between our SiNW CMOS inverters and conventional optoelectronic devices is the ability to control the flow of charge carriers more effectively. The improved sensitivity accomplished with the use of SiNW CMOS inverters allows better control of the on/off states.

Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (n-TFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I–V characteristics, subthreshold swing ( SS ), ON/OFF current ratio ( $I_{{\rm on}}/I_{{\rm off}}$ ), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high $I_{{\rm on}}/I_{{\rm off}} $ of ∼1011 and a sub-60-mV/dec SS , and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption.

In this study, we demonstrate the simulated subthreshold swing ( SS ) of silicon nanowire tunneling field-effect transistors (NWTFETs) by varying both the channel diameter from 10 nm to 40 nm and the gate coverage ratio from 30% to 100%. Our simulation work reveals that both a decrease in the channel diameter and an increase in the gate coverage ratio contribute to a reduction in the SS . Additionally, our work shows that the magnitude of the on-current depends linearly on the gate coverage ratio and that the drain current increases with a decrease in the channel diameter. Thus, an NWTFET with a channel diameter of 10 nm and a gate coverage ratio of 100% exhibits superior electrical characteristics over other silicon NWTFETs in that the NWTFET shows a point SS of 22.7 mV/dec, an average SS of 56.3 mV/dec, an on/off current ratio of ∼10 13 , and an on-current of ∼10 −5 A/μm.

Patients with facial nerve palsy (FNP) are actually evaluated by other people rather than doctors or the patients themselves. This study was performed to investigate the characteristics of the perception of unilateral FNP in Korean people. A questionnaire using photographs of four patients with four different grades (House-Brackmann) of FNP was given to two hundred people with no FNP. Subjects of each gender, ranging from 20 to 69 years of age, participated. The questionnaire, showing facial expressions of resting, smiling, whistling, eye closing, and frowning, consisted of questions concerning the identification and the involved side of FNP, the unnatural areas of the face, and the unnaturalness of the facial expressions. The overall identification rate of FNP was 75.0 %. The identification rate increased according to the increase in the grade of the patient’s FNP (p

In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p +–i–n + doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.

In this paper, we describe the feedback and tunneling operations of a dual top gate field-effect transistor (FET) with a p +-i-n + doped silicon nanowire channel. The transistor functions selectively in either a feedback FET (FBFET) or a tunneling FET mode by modulating the source-to-drain voltage, and it features an outstanding subthreshold swing characteristic of 6.15 mV dec-1 with an on/off current ratio (I on/I off) of approximately 106 in the feedback operating mode and of 41.3 mV dec-1 with I on/I off of ∼107 in the tunneling operating mode. Moreover, our device in the FBFET operation mode has memory characteristics with a retention time of 104 s and a program/erase endurance up to 103 cycles owing to the positive feedback loop in the channel region. This study demonstrates the promising potential of our devices in the development of multifunctional electronics.

In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I–V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec−1, an on/off current ratio of approximately 1011, and an on-current of approximately 10−4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.