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Your search keyword '"Zeng, Hui‐Yi"' showing total 92 results
Start Over Author "Zeng, Hui‐Yi" Publication Year Range Last 10 years
92 results on '"Zeng, Hui‐Yi"'

4. Depletion of miR-96 Delays, But Does Not Arrest, Photoreceptor Development in Mice

Author

Xiang, Lue, primary, Zhang, Juan, additional, Rao, Feng-Qin, additional, Yang, Qiao-Li, additional, Zeng, Hui-Yi, additional, Huang, Sheng-Hai, additional, Xie, Zhen-Xiang, additional, Lv, Ji-Neng, additional, Lin, Dan, additional, Chen, Xue-Jiao, additional, Wu, Kun-Chao, additional, Lu, Fan, additional, Huang, Xiu-Feng, additional, and Chen, Qi, additional

Published
2022
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15. Ba13In12Zn7S38 and Ba12In12Zn8Se38: infrared nonlinear optical chalcogenides designed by zinc-induced non-centrosymmetry transformation.

Author

Yang, Long-Qi, Ye, Run, Jiang, Xiao-Ming, Liu, Bin-Wen, Zeng, Hui-Yi, and Guo, Guo-Cong

Abstract

Drawbacks, such as low laser damage threshold (LDT), of existing IR nonlinear optical (NLO) materials necessitate the exploration of new candidates. Promising candidates should have been found in the Ba–In–Q (Q = S, Se) system close to the well-known IR NLO (Ba, Sr)–(Ga, Al)–Q system, but all known Ba–In–Q phases are centrosymmetric (CS), precluding them from being NLO-active. Two new chalcogenides, Ba13Zn7In12S38 (1) and Ba12Zn8In12Se38 (2), were obtained by the introduction of d10 Zn2+ in the Ba–In–Q (Q = S, Se) system, where mixing Zn2+ in In3+ sites resulted in non-centrosymmetric transformation. Their structures comprised rare impeller-like chalcogenide units containing four-membered tetrahedral cluster or T2-supertetrahedra blades. Remarkably, strong phase-matchable second harmonic generation efficiency (0.6 × AGS), high LDT (24 × AGS), wide IR transparency region, and congruent melting characteristic make 1 be a good candidate for high power IR-NLO applications. The current work provided an avenue to design IR NLO materials in NLO-active motifs containing CS chalcogenide systems by the incorporation of d10 metals. [ABSTRACT FROM AUTHOR]

Published
2020
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16. Li[LiCs2Cl][Ga3S6]: A Nanoporous Framework of GaS4 Tetrahedra with Excellent Nonlinear Optical Performance.

Author

Liu, Bin‐Wen, Jiang, Xiao‐Ming, Li, Bing‐Xuan, Zeng, Hui‐Yi, and Guo, Guo‐Cong

Subjects
SECOND harmonic generation, MATHEMATICAL complexes, TETRAHEDRA, PYROLYTIC graphite, NONLINEAR optics
Abstract

A large nonlinear optical (NLO) coefficient and a wide band gap are two crucial but contradictory parameters that are difficult to achieve simultaneously in a single infrared (IR) NLO compound. A salt‐inclusion chalcogenide (SIC), Li[LiCs2Cl][Ga3S6] (1), was prepared that presents a nanosized tunnel framework constructed from monotype chalcogenide tetrahedra. Highly oriented covalent GaS4 tetrahedra in the host lead to a moderate second harmonic generation response (0.7 AgGaS2), and ionic guests effectively broaden the band gap to the widest value (4.18 eV) among all IR NLO chalcogenides, thereby achieving a remarkable balance between NLO efficiency and band gap. [ABSTRACT FROM AUTHOR]

Published
2020
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23. Large Second-Harmonic Generation Responses Achieved by the Dimeric [Ge2Se4(μ-Se2)]4– Functional Motif in Polar Polyselenides A4Ge4Se12 (A = Rb, Cs)

Author

Liu, Bin-Wen, primary, Zhang, Min-Yi, additional, Jiang, Xiao-Ming, additional, Li, Shu-Fang, additional, Zeng, Hui-Yi, additional, Wang, Guo-Qiang, additional, Fan, Yu-Hang, additional, Su, Yong-Fei, additional, Li, Chunsen, additional, Guo, Guo-Cong, additional, and Huang, Jin-Shun, additional

Published
2017
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24. AMnAs3S6(A = Cs, Rb): Phase-Matchable Infrared Nonlinear Optical Functional Motif [As3S6]3–Obtained via Surfactant–Thermal Method

Author

Ye, Run, Liu, Bin-Wen, Jiang, Xiao-Ming, Lu, Jian, Zeng, Hui-Yi, and Guo, Guo-Cong

Abstract

Exploration of a new nonlinear optical (NLO)-active functional motif is important in the rational design of promising infrared (IR) NLO materials. Compared with typical tetrahedral MQ4(M = IIB, III, IV metals; Q = S, Se) motifs, MQ3(M = As, Sb) pyramids favor high second-harmonic generation (SHG) efficiency while frequently hindering phase matching (PM) because of excessively large optical anisotropy. The surfactant–thermal method was first adopted to achieve PM in MQ3-containing systems and synthesize mixed covalent–ionic IR NLO materials. Two new thioarsenates of AMnAs3S6(A = Cs, Rb) exhibiting strong PM SHG efficiencies comparable to commercial AGS and laser-induced damage thresholds of one order higher than AGS were obtained. The [As3S6]3–unit in their structures is an unprecedented NLO-active functional motif, which can be useful in designing new IR NLO compounds with large SHG efficiency. In addition, the surfactant–thermal method provides a new general strategy for synthesizing new IR NLO materials.

Published
2020
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29. SrCdSnQ4 (Q = S and Se): infrared nonlinear optical chalcogenides with mixed NLO-active and synergetic distorted motifs.

Author

Lin, Yang-Jie, Liu, Bin-Wen, Ye, Run, Jiang, Xiao-Ming, Yang, Long-Qi, Zeng, Hui-Yi, and Guo, Guo-Cong

Abstract

Two new infrared (IR) nonlinear optical (NLO) chalcogenides, SrCdSnQ4 (Q = S and Se) (1 and 2), were obtained by mixing NLO-active metal chalcogenides and d10 metal tetrahedral motifs in an alkali metal-containing system. Their structures are constructed with edge- and corner-sharing CdQ4 and SnQ4 (Q = S and Se) units to form two-dimensional (CdSnQ4)2− layers, between which are embedded with Sr2+. Compounds 1 and 2 have moderate band gaps of 2.05 and 1.54 eV, respectively. They exhibit strong second-harmonic generation intensities that are comparable to that of the benchmark AgGaS2 using a 2040 nm laser. Furthermore, their laser-induced damage thresholds are 10 and 5 times higher than that of AgGaS2, respectively. The strong NLO efficiency of these two compounds can be ascribed to SnQ4 tetrahedra with a synergetic enhancement in the large distortion of CdQ4 tetrahedra, shedding light on the exploration of new IR NLO materials with mixed NLO-active and synergetic distorted motifs. [ABSTRACT FROM AUTHOR]

Published
2019
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37. Strong SHG Response via High Orientation of Tetrahedral Functional Motifs in Polyselenide A2Ge4Se10 (A = Rb, Cs).

Author

Liu, Bin‐Wen, Hu, Chun‐Li, Zeng, Hui‐Yi, Jiang, Xiao‐Ming, and Guo, Guo‐Cong

Abstract

Abstract: Nonlinear optical (NLO) materials with strong second harmonic generation (SHG) responses are technologically and scientifically important for tunable lasers. This work puts forward a new strategy for designing promising infrared nonlinear optical (IR‐NLO) materials with strong SHG responses by strengthening both the static and induced contributions via the high orientation of NLO functional motifs. Two new polyselenides Rb2Ge4Se10 and Cs2Ge4Se10 are studied to verify the strategy, they have 2D infinite ∞ 2[Ge4Se10]2− layers comprising highly oriented distorted GeSe4 tetrahedra. Their large SHG signals (8.0 and 8.5 times that of commercial AgGaS2) can be ascribed to both the static contribution enhancement from the high orientation of the local dipole moment of GeSe4 tetrahedra and the induced contribution enhancement from terminal and SeSe bonded Se atoms. The results confirm the effectiveness of the proposed approaches, shedding light on the exploration of practical IR‐NLO materials with maximized performance. [ABSTRACT FROM AUTHOR]

Published
2018
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45. Strong Infrared Nonlinear Optical Efficiency and High Laser Damage Threshold Realized in Quaternary Alkali Metal Sulfides Na2Ga2MS6(M = Ge, Sn) Containing Mixed Nonlinear Optically Active Motifs

Author

Li, Shu-Fang, Jiang, Xiao-Ming, Liu, Bin-Wen, Yan, Dong, Zeng, Hui-Yi, and Guo, Guo-Cong

Abstract

Two new infrared (IR) nonlinear optical (NLO) sulfides, Na2Ga2GeS6and Na2Ga2SnS6, were obtained by mixing different typical NLO-active motifs GaS4and GeS4/SnS4in the alkali metal-containing system. The IR NLO sulfides present laser-induced damage thresholds that are 18.1 and 17.9 times that of the reference AgGaS2(AGS) and second-harmonic generation efficiencies that are 0.8 and 1.1 times that of AGS. These properties originate from the GaS4, GeS4, and SnS4tetrahedral blocks in the structures of the sulfides. Both compounds also exhibit a broad transparency range and type-I phase-matching behavior, which support their high potential in high-power laser applications. This work sheds new light on the development of promising mid-IR NLO materials by combining different NLO-active motifs.

Published
2018
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46. Face-Shared Octahedral Dimer In2O7S2 in the Non-Centrosymmetric Barium Indiumsilicate Oxysulfide Ba2In2Si3O10S.

Author

Guo, Wei‐Huan, Jiang, Xiao‐Ming, Liu, Bin‐Wen, Wu, Jia‐Wei, Li, Shu‐Fang, Zeng, Hui‐Yi, Guo, Guo‐Cong, and Huang, Jin‐Shun

Subjects
CHALCOGENIDES, OCTAHEDRAL molecules, INDIUM compounds, DIMERS, BARIUM, CATIONS
Abstract

The first indiumsilicate oxysulfide Ba2In2Si3O10S ( 1) was obtained by an alkali polychalcogenide flux method through a high-temperature solid-state reaction. It crystallizes in the non-centrosymmetric space group Pca21 (No. 29), with a = 23.060(6), b = 5.2954(6), c = 8.779(2) Å, and Z = 4. Its three-dimensional (3D) framework is constructed from one-dimensional (1D) infinite ∞1[In2O7S2/2] double octahedral chains bridged by corner-sharing Si tetrahedral trimers [Si3O10]8-, yielding a 3D framework with the channels filled with Ba2+ cations along the b direction. It is unprecedented in that the two distorted indium octahedra in 1 face-share to form a [In2O7S2] dimer in indium oxides and oxide chalcogenides. [ABSTRACT FROM AUTHOR]

Published
2016
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47. Thiophosphates Containing Ag+and Lone-Pair Cations with Interchiral Double Helix Show Both Ionic Conductivity and Phase Transition

Author

Fan, Yu-Hang, Zeng, Hui-Yi, Jiang, Xiao-Ming, Zhang, Ming-Jian, Liu, Bin-Wen, Guo, Guo-Cong, and Huang, Jin-Shun

Abstract

Quaternary metal thiophosphates containing second-order Jahn–Teller distorted d10Ag+and lone-pair cations, Ag3Bi(PS4)2(1), Ag7Sn(PS4)3(2), and Ag7Pb(PS4)3(3), were obtained by solid-state synthesis. The structural frameworks of 2and 3feature an infinite 1-D interchiral double helix ∞1(Ag3P2S11), which is rare in inorganic compounds. Compound 3undergoes a significant first-order structural phase transition from monoclinic to hexagonal at ∼204 °C. This can be ascribed to the significant mismatch in the expansion coefficients between Pb–S (Ag–S) and P–S bonds evaluated by bond valence theory. The three compounds are Ag+ionic conductors, and Ag+ion migration pathways are proposed by calculating maps of low bond valence mismatch. Moreover, the optical properties of the three compounds were studied, and electronic structure calculations were performed. The combination of second-order Jahn–Teller distorted d10cation and lone-pair cation provides a new strategy to explore new metal thiophosphates with interesting structures and promising properties.

Published
2017
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48. Phase Transition and Second Harmonic Generation in Thiophosphates Ag2Cd(P2S6) and AgCd3(PS4)S2Containing Two Second-Order Jahn–Teller Distorted Cations

Author

Fan, Yu-Hang, Jiang, Xiao-Ming, Liu, Bin-Wen, Li, Shu-Fang, Guo, Wei-Huan, Zeng, Hui-Yi, Guo, Guo-Cong, and Huang, Jin-Shun

Abstract

Two new phases in the Ag–Cd–P–S system containing two second-order Jahn–Teller (SOJT) distorted d10cations (Cd2+and Ag+), namely, Ag2Cd(P2S6) (1) and AgCd3(PS4)S2(2), are obtained via medium-temperature solid-state synthesis. Compound 1exhibits a two-dimensional layered structure and undergoes a first-order structural phase transition at approximately 280 °C. This outcome can be ascribed to the significant mismatch in the expansion coefficients between Cd–S (Ag–S) and P–P (P–S) bonds evaluated through bond valence theory. The three-dimensional non-centrosymmetric (NCS) framework of 2is constructed by two types of tetrahedral layers consisting of corner-shared CdS4, AgS4, and PS4tetrahedra. Compound 2exhibits second harmonic generation (SHG) intensity of 0.45 times that of commercial AgGaS2(AGS) at a laser irradiation of 1.85 μm and an optical band gap of 2.56 eV, and no intrinsic vibrational absorption of chemical bonds is observed in the range of 2.5–18.2 μm. Both phase transition in 1and SHG properties in 2are closely related to the SOJT distorted d10cations and diverse phosphorus–sulfur polyanions (PaSb)n−, which together can easily result in NCS distorted structures and interesting properties.

Published
2017
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49. Hg5AsS2I3 - A Narrow-Band-Gap 2D Layered Compound with Different Trapped I- Anions.

Author

Liu, Yong, Zeng, Hui‐Yi, Liu, Bin‐Wen, Wang, Geng‐E, and Guo, Guo‐Cong

Subjects
*ANIONS, *MERCURY, *HALIDES, *ELECTROSTATIC interaction, *SEMICONDUCTOR research
Abstract

A new layered compound, Hg5AsS2I3, has been synthesized in the quaternary system mercury/arsenic/chalcogen/halogen by a moderate-temperature solid-state reaction. The compound crystallizes in the space group C2/ c of the monoclinic system, and its structure consists of ∞1[Hg(1)2Hg(2)2As2/2S2] eight-membered-ring chains bridged by Hg atoms to form [Hg(1)2Hg(2)2Hg(3)As2/2S2] layers with inner- and interlayer electrostatic interactions between I and Hg. The optical properties were investigated by means of diffuse reflectance and FTIR spectra. The electronic band structures, along with density of states (DOS) calculations by DFT, indicate that the title compound is a semiconductor, and its optical absorption mainly leads to charge transitions from I-5p, As-4p and S-3p states to Hg-6s states, and both I(1) and I(2) atoms contribute to the top of the valence bands. [ABSTRACT FROM AUTHOR]

Published
2015
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