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We present an interdigitated back-contact silicon heterojunction system designed for liquid-phase crystallized thin-film (~10 µm) silicon on glass. The preparation of the interdigitated emitter (a-Si:H(p)) and absorber (a-Si:H(n)) contact layers relies on the etch selectivity of doped amorphous silicon layers in alkaline solutions. The etch rates of a-Si:H(n) and a-Si:H(p) in 0.6% NaOH were determined and interdigitated back-contact silicon heterojunction solar cells with two different metallizations, namely Al and ITO/Ag electrodes, were evaluated regarding electrical and optical properties. An additional random pyramid texture on the back side provides short-circuit current density ( jSC) of up to 30.3 mA/cm2 using the ITO/Ag metallization. The maximum efficiency of 10.5% is mainly limited by a low of fill factor of 57%. However, the high jSC, as well as VOC values of 633 mV and pseudo-fill factors of 77%, underline the high potential of this approach. Copyright © 2015 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

We fabricated interdigitated back-contact silicon hetero-junction solar cells based on thin-film absorbers on glass. The Si absorbers were directly deposited on the glass and crystallized using liquid phase crystallization. To compare whether our contact system is applicable to a wide range of initial absorber conditions two different types of precursors were prepared with absorber thicknesses between 2.5-9 μm. Furthermore, glass superstrates, doping densities and interlayer stacks were varied. With a KOH random pyramid light trapping texture at the back more than 30 mA/cm 2 were achieved on an electron beam evaporated precursor material and 655 mV on a PECVD precursor material. [ABSTRACT FROM AUTHOR]