1. Enhanced UV–Vis photodetector performance by optimizing interfacial charge transportation in the heterostructure by SnS and SnSe2.
- Author
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Dong, Wen, Lu, Chunhui, Luo, Mingwei, Liu, Yuqi, Han, Taotao, Ge, Yanqing, Xue, Xinyi, Zhou, Yixuan, and Xu, Xinlong
- Subjects
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SOLAR energy conversion , *PHOTODETECTORS , *X-ray photoelectron spectroscopy , *PHOTOELECTRIC effect , *ELECTRON transport , *OPTOELECTRONIC devices , *ABSORPTION spectra - Abstract
[Display omitted] Optimizing interfacial charge transfer in type-II heterostructures, is one promising solution to improve efficiency of the solar energy conversion in photodetectors and solar cells. Herein, the SnS/SnSe 2 /ITO and SnSe 2 /SnS/ITO heterostructures are prepared by two-step physical vapor epitaxial growth. X-ray photoelectron spectroscopy confirms the SnS/SnSe 2 heterostructure belongs to type-II band-alignment. The SnS/SnSe 2 based photodetector shows higher photoresponsivity, which is approximately 2, 9, and 14 times larger than that of SnSe 2 /SnS, SnSe 2 , and SnS, respectively. The improvement of SnS/SnSe 2 in photoelectric response mainly comes from high light harvesting and efficient charge transportation than individual SnSe 2 and SnS, which is verified by UV–Vis absorption spectra. Electrochemical impedance spectroscopy, open circuit potentials, and Mott‐Schottky characterization results further confirm that the better photodetection performance of SnS/SnSe 2 /ITO than that of SnSe 2 /SnS/ITO heterostructure is from the appropriate energy level cascade facilitating electron transport. These results provide an effective way to further improve the performance of heterostructure-based optoelectronic devices by an appropriate interface design. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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