Search

Optimizing thermal anneals of Si-implanted β-Ga2O3 is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga2O3 at concentrations from 5 × 1018 to 1 × 1020 cm−3, demonstrating full activation (>80% activation, mobilities >70 cm2/V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga2O3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 1018, 5 × 1019, and 1 × 1020 cm−3. Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga2O3 stability, pO2 must be greater than 10−9 bar. Anneals up to pO2 = 1 bar achieve full activation at 5 × 1018 cm−3, while 5 × 1019 cm−3 must be annealed with pO2 ≤ 10−4 bar, and 1 × 1020 cm−3 requires pO2 < 10−6 bar. Water vapor prevents activation and must be maintained below 10−8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 1019 cm−3 and occurs rapidly at 1 × 1020 cm−3. Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga2O3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase. [ABSTRACT FROM AUTHOR]

Here, we report that a source of Si impurities commonly observed on (010) β-Ga2O3 is from exposure of the surface to air. Moreover, we find that a 15 min hydrofluoric acid (HF) (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) β-Ga2O3 surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment, the sample must be immediately put under vacuum, for the Si fully returns within 10 min of additional air exposure. Finally, we demonstrate that performing a 30 min HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent Ga2O3 growth. [ABSTRACT FROM AUTHOR]

We demonstrated 500 °C operation of field-effect transistors made using ultra-wide bandgap semiconductor β-Ga2O3. Metal–semiconductor field-effect transistors were fabricated using epitaxial conductive films grown on an insulating β-Ga2O3 substrate, TiW refractory metal gates, and Si-implanted source/drain contacts. Devices were characterized in DC mode at different temperatures up to 500 °C in vacuum. These variable-temperature measurements showed a reduction in gate modulation of the drain current due to an increase in gate leakage across the gate/semiconductor Schottky barrier. Devices exhibited a reduction in transconductance with increasing temperature; despite this, drain current increased with temperature due to a reduction in threshold voltage caused by the de-trapping of electrons from deep-level traps. Devices also showed negligible change in semiconductor epitaxy and source/drain contacts, hence demonstrated recovery to their room-temperature electrical properties after the devices were tested intermittently at different high temperatures in vacuum. The mechanism of gate leakage was also explored, which implicated the presence of different conduction mechanisms at different temperatures and gate electric fields. [ABSTRACT FROM AUTHOR]

Beta-phase gallium oxide (β -Ga2O3) is a promising semiconductor for high frequency, high temperature, and high voltage applications. In addition to the β -phase, numerous other polymorphs exist and understanding the competition between phases is critical to control practical devices. The phase formation sequence of Ga2O3, starting from amorphous thin films, was determined using lateral-gradient laser spike annealing at peak temperatures of 500–1400 °C on 400 μs to 10 ms timescales, with transformations characterized by optical microscopy, x-ray diffraction, and transmission electron microscopy (TEM). The resulting phase processing map showed the γ -phase, a defect-spinel structure, first nucleating under all annealing times for temperatures from 650 to 800 °C. The cross-sectional TEM at the onset of the γ -phase formation showed nucleation near the film center with no evidence of heterogeneous nucleation at the interfaces. For temperatures above 850 °C, the thermodynamically stable β -phase was observed. For anneals of 1–4 ms and temperatures below 1200 °C, small randomly oriented grains were observed. Large grains were observed for anneals below 1 ms and above 1200 °C, with anneals above 4 ms and 1200 °C resulting in textured films. The formation of the γ -phase prior to β -phase, coupled with the observed grain structure, suggests that the γ -phase is kinetically preferred during thermal annealing of amorphous films, with β -phase subsequently forming by nucleation at higher temperatures. The low surface energy of the γ -phase implied by these results suggests an explanation for the widely observed γ -phase inclusions in β -phase Ga2O3 films grown by a variety of synthesis methods. [ABSTRACT FROM AUTHOR]