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Bismuth-based compounds have been identified as a class of promising candidates for the realization of high-performance thermoelectrics, derived from their exceptional electrical conductivity and intrinsic low lattice thermal conductivity κ L. Here, we employed first-principles calculations, self-consistent phonon theory, and compressive sensing technique in conjunction with the Boltzmann transport equation to investigate the anharmonic thermoelectric properties of full-heusler bismuth compounds Cs x Rb 3 − x Bi. As the Cs content increases, the κ L of Cs x Rb 3 − x Bi decreases due to impurity scattering effects, and then increases. Among them, at 300 K, Rb 3 Bi has the largest κ L of 0.69 Wm−1K−1, while Cs 2 RbBi has the smallest κ L of 0.45 Wm−1K−1, both of which are lower than the κ L of traditional bismuth-based thermoelectric materials. The ultralow κ L originates from the strong lattice anharmonicity. In addition, the coexistence of high dispersion and flat band edges leads to high thermoelectric power factor at optimal doping concentration. As a result, the largest thermoelectric figure of merit ZT values of 2.59 (4.19) at 300 (500) K were obtained for CsRb 2 Bi at optimal hole doping level. These findings suggest that Cs x Rb 3 − x Bi compounds are superior for thermal management and thermoelectric applications. • At finite temperatures, Cs x Rb 3 − x Bi compounds are not only mechanically stable but also dynamically stable. • The κ L of Rb 3 Bi, CsRb 2 Bi, Cs 2 RbBi, and Cs 3 Bi are 0.69, 0.47, 0.45, and 0.56 Wm−1K−1, respectively, at 300 K. • The p-type doped CsRb 2 Bi exhibits a ZT value of 2.59, while at 500K, the ZT value reaches 4.19. • The ultra-low κ L of CsRb 2 Bi originates from the rattling vibration of Bi atoms, which manifests as an 'avoided crossing' phenomenon. [ABSTRACT FROM AUTHOR]

[Display omitted] • The GO humidity sensor fabricated by a simple way. • The GO humidity sensor with ultrafast response and recovery time less than 0.3s. • Protons generated from oxygen-containing groups and water molecules revealed. • An array of sensors was successfully fabricated to demonstrate its application. • LEDs lighted up by power-generating device made from humidity sensors. Next-generation humidity sensor, as one of the smart devices in artificial skin or flexible electronics, will need to be self-powered, flexible, fast and accurately detecting in the microenvironment. Although various flexible humidity sensors have already been demonstrated, most of them rely on large external power sources to operate, and still suffer from slow response, poor selectivity in environmental stimuli, and expensive and complicated procedures. Here, we realize a self-powered humidity sensor with ultrafast response and recovery time of less than 0.3 s by flexible GO film. Importantly, of all state-of-the-art humidity sensors, this is the fastest response for humidity sensor. Moreover, the sensor has a high sensitivity within a wide range of RH from 33% to 98%, and an excellent selective response to humidity under multiple environmental stimuli, due to its moist-induced generator. Theoretical computations reveal that protons generated spontaneously from oxygen-containing groups and water molecules, have a fast diffusion behavior as Grotthuss hopping. In particular, we build four real-time measurement systems capable of respiration monitoring of human, smart leaf surface humidity sensor, and energy harvesting. Our work provides a simple way to fabricate next-generation self-powered sensor using GO film with outstanding humidity sensor performance. [ABSTRACT FROM AUTHOR]