1. First-principles study of mechanical, electronic structure, and optical properties for cubic fluoroperovskite XMgF3 (X=Al, Ga, In, Tl) under high pressure*.
- Author
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Zhang, Jingyi, Chen, Yan, Chen, Shanjun, Hou, Jie, Song, Ruijie, and Shi, Zai-Fa
- Subjects
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ELECTRONIC structure , *OPTICAL properties , *BAND gaps , *CONDUCTION bands , *VALENCE bands , *ANTIREFLECTIVE coatings - Abstract
The effects of pressure on the mechanical, electrical structure, and optical characteristics of cubic fluoroperovskite XMgF 3 (X = Al, Ga, In, Tl) are investigated based on the first principles methods. The calculated lattice constants are in good agreement with those in the literature. According to the mechanical properties, all the compounds exhibit ductility and anisotropy, and the inter-atomic binding bonds of these materials are ionic. According to Kleinman's parameter, bond stretching is dominant in XMgF 3 (X = Al, Ga, In, Tl). Among all studied compounds, AlMgF 3 carries the highest machinable index, indicating that it is the most machinable and suitable material for industrial applications. The electronic structures show that AlMgF 3 and InMgF 3 are indirect bandgap semiconductors, while GaMgF 3 and TlMgF 3 are direct bandgap insulators at 0 GPa. The values of band gap for all the compounds decrease with the increasing pressure. X-s and F-p orbital states contribute primarily to the top of the valence band, whereas X-p orbital states dominate the bottom of the conduction band. The overall shape of electron state density under pressure does not change significantly, but its peak widens. The optical properties of XMgF 3 (X = Al, Ga, In, Tl) crystal at zero pressure and high pressures are further investigated. The results indicate that XMgF 3 compounds have outstanding ultraviolet (UV) absorption properties and could be used in UV optical devices. Moreover, the low reflectivity values of XMgF 3 crystals make the compounds potential anti-reflective coating materials. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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