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Molecular doping of organic semiconductors is often used to enhance their charge transport characteristics. Despite its success, however, most studies to date concern p‐doping with considerably fewer reports involving n‐dopants. Here, n‐doping of organic thin‐film transistors (OTFTs) based on several non‐fullerene acceptor (NFA) molecules using the recently developed diquat (DQ) as a soluble molecular dopant is reported. The low ionization potential of DQ facilitates efficient electron transfer and subsequent n‐doping of the NFAs, resulting in a consistent increase in the electron field‐effect mobility. Solution‐processed BTP‐eC9 and N3‐based OTFTs exhibit significant increase in the electron mobility upon DQ doping, with values increasing from 0.02 to 0.17 cm2 V–1 s–1 and from 0.2 to 0.57 cm2 V–1 s–1, respectively. A remarkable electron mobility of >1 cm2 V–1 s–1 is achieved for O‐IDTBR transistors upon optimal doping with DQ. The enhanced performance originates primarily from synergistic effects on electronic transport and changes in morphology, including: i) significant reduction of contact resistances, ii) formation of larger crystalline domains, iii) change of preferred crystal orientation, and iv) alteration in molecular packing motif. This work demonstrates the universality of DQ as an electronic additive for improving electron transport in OTFTs. [ABSTRACT FROM AUTHOR]

Hydrogen is attractive as an abundant source for clean and renewable energy. However, due to its highly flammable nature in a range of concentrations, the need for reliable and sensitive sensor/monitoring technologies has become acute. Here a solid‐state hydrogen sensor based on solution‐processable p‐type semiconductor copper thiocyanate (CuSCN) is developed and studied. Sensors incorporating interdigitated electrodes made of noble metals (gold, platinum, palladium) show excellent response to hydrogen concentration down to 200 ppm while simultaneously being able to operate reversibly at room temperature and at low power. Sensors incorporating Pd electrodes show the highest signal response of 179% with a response time of ≈400 s upon exposure to 1000 ppm of hydrogen gas. The experimental findings are corroborated by density functional theory calculations, which highlight the role of atomic hydrogen species created upon interaction with the noble metal electrode as the origin for the increased p‐type conductivity of CuSCN during exposure. The work highlights CuSCN as a promising sensing element for low‐power, all‐solid‐state printed hydrogen sensors. [ABSTRACT FROM AUTHOR]

Efficiencies of organic solar cells have practically doubled since the development of non‐fullerene acceptors (NFAs). However, generic chemical design rules for donor‐NFA combinations are still needed. Such rules are proposed by analyzing inhomogeneous electrostatic fields at the donor–acceptor interface. It is shown that an acceptor–donor–acceptor molecular architecture, and molecular alignment parallel to the interface, results in energy level bending that destabilizes the charge transfer state, thus promoting its dissociation into free charges. By analyzing a series of PCE10:NFA solar cells, with NFAs including Y6, IEICO, and ITIC, as well as their halogenated derivatives, it is suggested that the molecular quadrupole moment of ≈75 Debye Å balances the losses in the open circuit voltage and gains in charge generation efficiency. [ABSTRACT FROM AUTHOR]

Self‐assembled monolayers (SAMs) based on Br‐2PACz ([2‐(3,6‐dibromo‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid) 2PACz ([2‐(9H‐Carbazol‐9‐yl)ethyl]phosphonic acid) and MeO‐2PACz ([2‐(3,6‐dimethoxy‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid) molecules were investigated as hole‐extracting interlayers in organic photovoltaics (OPVs). The highest occupied molecular orbital (HOMO) energies of these SAMs were measured at −6.01 and −5.30 eV for Br‐2PACz and MeO‐2PACz, respectively, and found to induce significant changes in the work function (WF) of indium‐tin‐oxide (ITO) electrodes upon chemical functionalization. OPV cells based on PM6 (poly[(2,6‐(4,8‐bis(5‐(2‐ethylhexyl‐3‐fluoro)thiophen‐2‐yl)‐benzo[1,2‐b:4,5‐b']dithiophene))‐alt‐(5,5‐(1',3'‐di‐2‐thienyl‐5',7'‐bis(2‐ethylhexyl)benzo[1',2'‐c:4',5'‐c']dithiophene‐4,8‐dione)]) : BTP‐eC9 : PC71BM ([6,6]‐phenyl‐C71‐butyric acid methyl ester) using ITO/Br‐2PACz anodes exhibited a maximum power conversion efficiency (PCE) of 18.4 %, outperforming devices with ITO/MeO‐2PACz (14.5 %) and ITO/poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT : PSS) (17.5 %). The higher PCE was found to originate from the much higher WF of ITO/Br‐2PACz (−5.81 eV) compared to ITO/MeO‐2PACz (4.58 eV) and ITO/PEDOT : PSS (4.9 eV), resulting in lower interface resistance, improved hole transport/extraction, lower trap‐assisted recombination, and longer carrier lifetimes. Importantly, the ITO/Br‐2PACz electrode was chemically stable, and after removal of the SAM it could be recycled and reused to construct fresh OPVs with equally impressive performance. [ABSTRACT FROM AUTHOR]