1. A comprehensive study of defects in gallium oxide by density functional theory.
- Author
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Uddin Jewel, Mohi, Hasan, Samiul, and Ahmad, Iftikhar
- Subjects
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DENSITY functional theory , *POWER semiconductors , *ANTISITE defects , *POINT defects , *GALLIUM - Abstract
[Display omitted] • A comprehensive calculation and analysis of defect properties in the corundum, monoclinic, and orthorhombic Ga 2 O 3 phases are presented. • The Ga-rich growth environment in all Ga 2 O 3 phases favors the spontaneous formation of oxygen vacancies with concentrations that can reach as high as 1021 cm−3. • The antisite defects contribution in intrinsic defect density is not negligible in an O-rich environment, and can reach a concentration of 1014 cm−3. • The charge transition levels in all phases are at deep levels within the bandgap. • Raman spectroscopy in an as-grown β-Ga 2 O 3 and a high temperature annealed β-Ga 2 O 3 reveals an increase in point defect concentration, correlating the defect formation energies to experimental observation. Ultrawide bandgap gallium oxide (Ga 2 O 3) is a promising material for power semiconductor devices and deep ultraviolet (UV) solar-blind photodetectors. Understanding the properties of point defects in Ga 2 O 3 is necessary to realize better-performing devices. A comprehensive study based on density functional theory (DFT), using the generalized gradient approximation (GGA): Perdew-Burke-Ernzerhof (PBE) exchange–correlation functional, of point defects in corundum (α), monoclinic (β), and orthorhombic (ε) phases of Ga 2 O 3 is presented. The point defects include vacancies, interstitials, antisites, and extrinsic impurities in various phases of Ga 2 O 3. Defect formation energies, charge transition energy levels, and defect concentrations variation with temperature are listed and presented under both gallium-rich (Ga-rich) and oxygen-rich (O-rich) growth conditions. The formation energy diagrams predict that the Ga 2 O 3 phases favor the formation of Ga and O vacancies and the incorporation of extrinsic impurities. The calculations also show that the charge transition levels are deep inside the bandgap regardless of the Ga 2 O 3 phase and growth environment. The impacts of temperature on the intrinsic point defects are analyzed by probing the vibrational modes of β-Ga 2 O 3 thin films grown in a metal–organic chemical vapor deposition (MOCVD) system at 700 °C temperature and annealed at 1100 °C in an O-rich environment. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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