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High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including free-space communication; industrial processing; and the medical, aerospace, and military fields, as well as other fields. The reliability of high-power semiconductor lasers is the key point of the application system. Higher reliability is sought in the military defense and aerospace fields in particular. Reliability testing and failure analysis help to improve the performance of high-power semiconductor lasers. This article provides a basis for understanding the reliability issues of semiconductor lasers across the whole supply chain. Firstly, it explains the failure modes and causes of failure in high-power semiconductor lasers; this article also summarizes the principles and application status of accelerated aging experiments and lifetime evaluation; it also introduces common techniques used for high-power semiconductor laser failure analysis, such as the electron beam-induced current (EBIC) technique and the optical beam-induced current (OBIC) technique, etc. Finally, methods used to improve the reliability of high-power semiconductor lasers are proposed in terms of the preparation process, reliability screening, and method application. [ABSTRACT FROM AUTHOR]

Uncontrollable dendrite growth is closely related to non‐uniform reaction environments. However, there is a lack of understanding and analysis methods to probe the localized electrochemical environment (LEE). Here the effects of the LEE are investigated, including localized ion concentrations, current density, and electric potential, on metal plating/stripping dynamics and dendrite minimization. A novel in situ 3D microscopy technique is developed to image the morphology dynamics and deposition rate of Zn plating/stripping processes on 3D Zn–Mn anodes. Using the in situ 3D microscope, the electrode morphology changes during the reactions are directly imaged and Zn deposition rate maps at different time points are obtained. It is found that reaction kinetics are highly correlated to LEE and electrode morphology. To further quantify the LEE effects, the digital twin technique is employed that allows the accurate calculation of the electrochemical environments, such as localized ion concentrations, current density, and electric potential, which cannot be directly measured from experiments. It is found that the curvature of the 3D electrode surface determines the LEE and significantly influences reaction kinetics. This provides a new strategy to minimize the dendrite formation by designing and optimizing the 3D geometry of the electrode to control the LEE. [ABSTRACT FROM AUTHOR]

• A high efficiency spectral linewidth narrowing structure is proposed. • A blue diode laser with 444.36 nm central wavelength and 0.18 nm spectral linewidth is achieved. • The 40 W class narrow-linewidth blue diode laser is the highest reported to date. An external cavity feedback structure based on volume Bragg grating is introduced to realise spectral stabilisation and linewidth narrowing of a blue diode laser, with a central wavelength of 444.36 nm and a spectral linewidth of 0.18 nm. Using spatial beam combining technology and fibre coupling technology, a blue diode laser source producing 40.3 W power from an output fibre (core diameter: 105 µm, numerical aperture: 0.22) is achieved at an operating current of 3 A. The external cavity feedback and fibre coupling efficiencies exceeded 101.8 % and 88 %, respectively. Such high-power narrow-linewidth blue diode lasers show potential applications in second-harmonic generation, high-resolution spectroscopy, medical treatment, and industrial processing. To the best of our knowledge, the 40 W class output power with the narrow-linewidth of a fibre-coupled blue diode laser is the highest reported to date. [ABSTRACT FROM AUTHOR]

A diode-pumped alkali metal vapor laser (DPAL) combines the advantages of a solid laser and a gas laser. DPAL is useful in the industrial, medical, aerospace and military fields and can yield high output power while maintaining excellent beam quality. However, applications in many fields are limited due to the narrow absorption spectrum of the alkali metal vapor laser. In this study, a novel linewidth narrowing structure of the high-power diode laser based on volume Bragg gratings (VBGs) is proposed to match the absorption spectrum of the alkali metal vapor laser. With the combination of fast-axis collimating lens, beam transformation systems, slow-axis collimating lens, VBGs and metal ceramic heaters, the divergence angles of both fast and slow axis are compressed within 10 mrad. A high-power narrow linewidth diode laser source with a central wavelength of 780.044 nm, a spectral width of 0.138 nm, and an output power of 1090 W is achieved at an operating current of 50 A. Experimental results show that the effect of external cavity feedback based on VBG is improved and the multi-channel spectral linewidth is narrowed effectively by such a structure. The diode laser source based on this structure can be applied for pumping the rubidium alkali metal vapor laser. [ABSTRACT FROM AUTHOR]