Shi, Shuyuan, Li, Jie, Hsu, Chuang‐Han, Lee, Kyusup, Wang, Yi, Yang, Li, Wang, Junyong, Wang, Qisheng, Wu, Hao, Zhang, Wenfeng, Eda, Goki, Liang, Gengchiau, Chang, Haixin, and Yang, Hyunsoo
Weyl semimetal Td‐phase WTe2 possesses the spin‐resolved band structure with strong spin–orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td‐WTe2 endows the generation of the out‐of‐plane polarized spin, which is of great interest in magnetic memory applications. Previously, WTe2 was explored in spin devices based on mechanically exfoliated single crystal flakes with a size of micrometers. For practical spintronics applications, it is highly desirable to implement wafer‐scale thin films. In this work, centimeter‐scale chemical vapor deposition (CVD) grown Td‐WTe2 thin films are used and the spin current generation is studied by the spin torque ferromagnetic resonance (ST‐FMR) technique. The in‐plane and out‐of‐plane spin conductivities of 7.36 × 103 (ℏ/2e) (Ωm)–1 and 1.76 × 103 (ℏ/2e) (Ωm)–1, respectively, are found in CVD‐growth 5 nm‐WTe2. The current‐induced magnetization switching in WTe2/NiFe is demonstrated at room temperature in the domain wall motion regime, which may invigorate potential spintronic device innovations based on Weyl semimetals. [ABSTRACT FROM AUTHOR]