1. A 35 V–5 V monolithic integrated GaN-based DC–DC floating buck converter.
- Author
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Zhu, Yuhao, Su, Haodong, Li, Fan, Li, Ang, Lei, Xiaohaoyang, Cui, Miao, Lai, Wen-Cheng, Wen, Huiqing, and Liu, Wen
- Subjects
MODULATION-doped field-effect transistors ,TRANSISTOR-transistor logic circuits ,FIELD-effect transistors ,POWER transistors ,STRAY currents ,DC-to-DC converters - Abstract
The paper presents the development of a GaN DC–DC power converter with a pre-driver module and power device based on a monolithic integrated GaN E/D-mode metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) platform. The pre-driver module with direct coupled field effect transistor logic circuit structure has been monolithically integrated with a GaN power transistor on a Si-based AlGaN/GaN commercial epitaxial wafer. The MIS-HEMTs structure adopts an insulated gate dielectric layer to suppress the leakage current and increase gate voltage robustness. The GaN-based floating buck converter employs a 1 mH inductor and a 9 μ F capacitor to achieve 35 V–5 V power conversion. As a result, the pre-driver module is capable of delivering a 10 V driving voltage. GaN monolithic integration of the pre-driver module and power device can reduce the system area in the DC–DC application, which allows for an integrated chip size of 1.8 mm
2 . [ABSTRACT FROM AUTHOR]- Published
- 2023
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