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The sensitivity of strong-field ionization to atomic orbital helicity has attracted much attention from physicists, due to its potential application in attosecond spectroscopy and spintronics. In order to intuitively observe the physical mechanisms of helicity-dependent ionization rates during photoionization, the concept of the Wigner phase can be used to characterize the different interactions between the rotating electrons and the Coulomb potential. Here, we find that in both one- and three-photon ionization schemes, the electrons liberated more easily by the circularly polarized laser field suffer less influence of the Coulomb potential during the propagation and then accumulate less Winger phase. This result indicates that the strength of the interaction between the rotating electrons and the Coulomb potential can explain the helicity-dependent ionization for different ionization mechanisms universally, which is also supported by our classical ensemble analysis. Our work provides an intuitive perspective towards the physics picture of ionization propensity rules. [ABSTRACT FROM AUTHOR]

Ultrafast electron pulses generated using femtosecond lasers offer a direct means for investigating ultrafast processes, but the yield of electron emission remains a significant practical limitation. This study demonstrates a substantial enhancement in yield of electron emission from carbon nanotubes induced by two-color (ω + 2 ω) pulses with an 80 MHz repetition rate and this enhancement is non-delay-dependent. Compared to the sum of photocurrents induced by each color pulse individually, the combined two-color pulses result in a remarkable enhancement in yield of electron emission by more than 25 times. We attribute this enhanced yield to carrier-assisted optical field emission: carbon nanotubes sustain high carrier concentration state under laser radiation thereby enhancing yield of electron emission. We propose the carrier migration emission model to provide a semi-quantitative description for the carrier-assisted optical field emission. This phenomenon introduces a new method to increase the yield of ultrafast electron pulses from CNTs and paves the way for next-generation ultrafast electron emitters and on chip ultrafast optoelectronic device. [Display omitted] [ABSTRACT FROM AUTHOR]