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Gallium nitride (GaN) devices are generally more prone to severe switching oscillations than Si mosfets due to their fast switching speeds. Different from Si and SiC mosfets, GaN devices typically have a lower maximum gate voltage rating. Taking the Efficient Power Conversion Corporation series as an example, the gate drive voltage is usually 5 V, but the maximum voltage rating is 6 V. Therefore, GaN devices are more susceptible to damage from gate-source voltage oscillation. In this letter, a gate drive circuit with a clamping function is proposed to suppress gate-source voltage oscillation. The adopted method can not only clamp the gate voltage of the GaN device near the drive voltage to protect the device, but also does not affect the switching speed of the device. The proposed method mainly uses some passive components that make the circuit design simpler compared with other active gate driver methods. Finally, the effectiveness of the proposed method is verified by experiments. [ABSTRACT FROM AUTHOR]