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This work reported the grain growth kinetics of high‐entropy diboride (HEB) and HEB‐SiC ceramics containing 10, 20, and 30 vol% SiC during heat treatment at 1800°C. The coarsening of HEB phase occurred in the four kinds of ceramics during heat treatment, especially in HEB ceramics. The kinetic analysis showed that the grain growth of HEB phase in HEB and HEB‐SiC ceramics is controlled by interface‐controlled kinetics and grain‐boundary pinning, respectively. The growth rate constant of HEB grains is lower than ZrB2, which is related to the low grain‐boundary energy and the sluggish diffusion effect in dynamics of high‐entropy materials. The growth rate of matrix phase in HEB‐SiC ceramics is similar to that in ZrB2–SiC ceramics, indicating that the pinning effect of the SiC second‐phase played the dominant role in inhibiting the grain growth of the high‐entropy matrix phase and disguised the sluggish diffusion effect. This study reveals that the grain growth inhibition through sluggish diffusion effect in a high‐entropy ceramic system may be magnified by the possible existence of segregated second‐phase particles located at the grain boundaries. [ABSTRACT FROM AUTHOR]

Hierarchical porous silicon carbide (SiC) attracts great attention due to its superior chemical resistance, high thermal shock resistance, and excellent thermal stability. The preparation of a porous SiC monolith via a simple sol–gel method is limited by either the high cost of the raw materials or the special time-consuming drying process. Herein, we report an ambient drying sol–gel approach for the synthesis of organic–inorganic hybrid monolithic gels which can be converted into hierarchical porous SiC monoliths upon pyrolysis at 1400 °C. The as-synthesized SiC monoliths possess hierarchical pores with macropores of 4.5 µm and mesopores of 2.0 nm. The porosities, specific surface areas and compressive strengths of the hierarchical porous SiC monoliths are 71.3%, 171.5 m2/g and 7.0 ± 0.8 MPa, respectively. [ABSTRACT FROM AUTHOR]

It is thought that the sintering of high‐entropy (HE) ceramics is generally more difficult when compared to that of the corresponding single‐component ceramics. In this paper, we report a novel approach to densify the HE carbide ceramics at relatively low temperatures with a small amount of silicon. Reactive spark plasma sintering (SPS) was used to densify the ceramics using powders of HE carbide and silicon as starting materials. Dense ceramics can be obtained at 1600 ‐1700°C. X‐ray diffraction analysis reveals that only non‐stoichiometric HE carbide phase with carbon vacancy and SiC phase exist in the obtained ceramics. The in‐situ formed SiC phase inherits the morphology of the starting silicon powder owing to the slower diffusion of silicon atoms compared to that of the carbon atoms in HE carbide phase. The mechanical properties of the prepared ceramics were preliminarily studied. [ABSTRACT FROM AUTHOR]