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Cs2AgBiBr6, as a benchmark lead‐free double perovskite, has emerged as a promising alternative to lead‐based perovskites because of its high stability, non‐toxicity, exceptional optoelectronic properties, and multifunctionality. To encourage further research on Cs2AgBiBr6 and its broad applications, in this review, its fundamental properties including the structure‐property relation, synthesis, stability, origin of absorption and photoluminescence, electron‐phonon coupling, role of defects, charge carrier dynamics, and bandgap modulation are comprehensively emphasized. The recent progress on the wide applications including solar cells, light/X‐ray detectors, and ferroelectric/magnetic devices are highlighted. Moreover, the challenges of Cs2AgBiBr6 materials and related applications are discussed and perspectives are provided for guiding the future development of this research area. [ABSTRACT FROM AUTHOR]

[Display omitted] • Anilinium hypophosphite was used as a co-additive in FASnI 3 perovskite. • Anilinium hypophosphite improved the perovskite optoelectronic properties. • Enhanced photovoltaic performance was obtained using new additive. Tin (Sn) is a promising substitute for lead (Pb) in organic–inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Sn-perovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI 3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF 2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices. [ABSTRACT FROM AUTHOR]

Ternary oxides Fe 2-x Mg x O 3 is introduced to passivate the perovskite/SnO 2 QDs interface, trigger the heterogeneous nucleation for uniform perovskite films, and increase the interface contact for the rapid electron transfer. Consequently, the corresponding perovskite solar cell achieves a champion efficiency over 21%. [Display omitted] • Fe 2-x Mg x O 3 is introduced to passivate the perovskite/SnO 2 interface. • The interaction between perovskite and Fe 2-x Mg x O 3 triggers a heterogeneous nucleation. • Flocculent Fe 2-x Mg x O 3 increase the contact with perovskite for electron transfer. • The interaction between Fe 2-x Mg x O 3 and SnO 2 QD passivates the defects. • Fe 1.84 Mg 0.16O 3 -based PSC achieves a champion efficiency over 21% with negligible J–V hysteresis. Interface function material has been widely used to reduce interfacial potential barrier for enhanced charge-dynamics and photovoltaic properties of perovskite solar cells (PSCs). Herein, ternary oxides Fe 2-x Mg x O 3 are introduced to passivate the perovskite/SnO 2 quantum dots (QDs) interface. The interaction between perovskite and Fe 2-x Mg x O 3 could trigger a heterogeneous nucleation for the uniform perovskite photoactive layer. The flocculent Fe 2-x Mg x O 3 also increase the interface contact with perovskite enabling more transferring channel of electron, and decrease the interface-defects with smaller the energy level offset at this interface. Such oxide bridges between perovskite and SnO 2 QD could effectively enhance electron transfer. Consequently, a Fe 1.84 Mg 0.16 O 3 -based PSC is achieved with a champion efficiency over 21% and negligible J–V hysteresis. [ABSTRACT FROM AUTHOR]