1. Investigations on TaHf alloys for thin film resistor applications.
- Author
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Wang, Kao-Yuan, Chang, Ting-Chang, Chen, Wen-Chung, Zhang, Yong-Ci, Tseng, Yi-Ting, Yang, Chih-Cheng, Lin, Chun-Chu, Wu, Pei-Yu, Tan, Yung-Fang, and Tsai, Tsung-Ming
- Subjects
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THIN films , *TEMPERATURE coefficient of electric resistance , *ALLOYS , *THERMAL stability - Abstract
TaHf thin films were deposited by performing the cosputtering of Ta and Hf targets. The results indicated that TaHf alloy is suitable for use as a resistive layer for thin film chip resistors and a replacement for NiCr and TaN x alloys. Maintaining the Hf:Ta ratio at approximately 1:1 produced the highest resistivity of 5.7 × 10−4 Ωcm when compared with TaN x and NiCr alloy thin films. This ratio also yielded a smaller temperature coefficient of resistance of −330 ppm/°C compared with TaN x thin films. Furthermore, the temperature coefficient of resistance of most TaHf thin films could be adjusted closer to zero through annealing. The increased Hf content in TaHf alloy was attributed to its poorer thermal stability and anticorrosion property relative to pure Ta films. However, the anticorrosion property of TaHf thin films was still stronger than that of NiCr thin films. • TaHf is a promising alternative material to TaN and NiCr for thin film resistor applications. • TaHf thin film possesses a smaller TCR and higher resistivity compared to TaN. • Anticorrosion properties of TaHf are stronger than those of NiCr. • TaHf thin film achieves a near-zero TCR by annealing if its oxygen content is low. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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