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An ultra-sharp metal-to-insulate transition (MIT) of 1.24 K − 1 in the epitaxial perovskite NdNiO 3 thin films was derived by the chemical solution deposition on the LaAlO 3 substrates. The thermal strains from shrink, grain growth, and thermal expansion coefficient misfit play a key role in the film microstructure and electrical properties. The originally theoretical in-plane compressive epitaxial strain changes into a tensile one caused by the thermal driving force. It relaxes with improved grain growth via decreased oxygen vacancies with increasing annealing temperature, while the concurrently enhanced tensile strain from the thermal expansion coefficient misfit between the films and the substrate leads to the destabilization of Ni 3 + and the higher MIT temperature. Nevertheless, too much higher tensile strain gives rise to island-grain growth in the films, leading to the weak and even disappeared MIT. [ABSTRACT FROM AUTHOR]

We have investigated the thickness-dependent transport properties of SrMoO 3 thin films deposited on LaAlO 3 substrates. Metal–insulator transitions (MITs) were observed in SrMoO 3 thin films with thickness below 10 nm. The low-temperature resistivity of these films can be explained by quantum corrections of the conductivity. An insulating behavior is observed when the thickness becomes 3.5 nm, and the resistivity can be described by the variable range hopping model with 2D fitting. The magneto-transport measurement of an SrMoO 3 thin film with small positive magnetoresistance confirms that the driving force behind MIT is the renormalized electron–electron interaction. [ABSTRACT FROM AUTHOR]

Design and implementation of efficient p‐type transparent conducting (TC) oxides with excellent performance are the global material challenge. The strategy of "chemical modulation of the valence band" triggers the enthusiasm for p‐type TC delafossite CuMO2. However, the low conductivity of previous CuMO2 films obstructs the development of delafossite‐based electronics. Herein, a new p‐type 4d transition metal Rh‐based CuRhO2 film with large‐size is first designed and fabricated by a facile solution method. Room‐temperature conductivity as high as 735 S cm−1 is achieved by substituting 10%Mg in Rh sites. Additionally, the acceptor‐doped CuRhO2 films exhibit high near‐infrared transmittance of 85–60% with low room‐temperature sheet resistance of 4.28–0.18 kΩ sq−1. Furthermore, the electronic structure, electrical transport mechanism, and intra‐band excitation feature for the CuRhO2 film are unveiled. The theoretical and experimental results make a great advance in p‐type TC films and will pave a promising blueprint for future multifunctional opto‐electronic devices. [ABSTRACT FROM AUTHOR]

The relationship between structural and electronic phase transitions in V2O3 thin films is of critical importance for understanding of the mechanism behind metal–insulator transition (MIT) and related technological applications. Despite being extensively studied, there are currently no clear consensus and picture of the relation between structural and electronic phase transitions so far. Using V2O3 thin films grown on r-plane Al2O3 substrates, which exhibit abrupt MIT and structural phase transition, we show that the electronic phase transition occurs concurrently with the structural phase transition as revealed by the electrical transport and Raman spectra measurements. Our result provides experimental evidence for clarifying this issue, which could form the basis of theoretical studies as well as technological applications in V2O3. [ABSTRACT FROM AUTHOR]

• The p-CuCrO 2 /n-In 2 O 3 heterojunctions were built on an ITO substrate. • The optimized p-n heterojunction shows high rectification rate of 104 (at ± 3 V). • The optimized p-n heterojunction maintains visible transmittance exceeding 60%. • The conduction mechanism is dominated by space-charge limited conduction in the heterojunction. Design and realization of high-performance transparent p-n heterojunctions are needed for the development of transparent electronic technology. In this study, we report the rectification behavior of transparent p-n heterojunctions based on solution-processed p-type CuCrO 2 and n-type In 2 O 3 thin films. The performance of heterojunction is improved by changing the annealing temperature of In 2 O 3 thin film. The optimized p-n diode shows high rectification rate of 1.41 × 104 (at ± 3 V) and an ideal factor of 3.9 while maintain visible transmittance exceeding 60%. The conduction mechanism is dominated by space-charge limited conduction in the heterojunction. The results will give impetus to the application of delafossite oxide-based diodes in transparent electronics. [ABSTRACT FROM AUTHOR]

• Au/CuCrO 2 /n-Si device exhibits bipolar resistive switching with self-rectifying behavior. • Statistical distributions 100 switching cycles were analyzed. • The resistive switching behavior in the heterojunction is of interface type. • The self-rectifying behavior is derived from the Schottky-like barrier. The resistive random access memory with self-rectifying behavior is one of the most effective to suppress the crosstalk current problem in crossbar array architectures. In this study, a p-type delafossite CuCrO 2 thin film is fabricated on an n-type silicon (n-Si) substrate, and the resistive switching (RS) behavior of the Au/CuCrO 2 /n-Si device is investigated in detail. The heterostructure exhibits repeatable bipolar RS with self-rectifying behavior. The bipolar RS behavior can be attributed to the trapping/detrapping of charge carriers in oxygen vacancies at the p-CuCrO 2 /n-Si interface. The current-voltage characteristics indicate that the self-rectifying behavior in the low resistance state is derived from the Schottky-like barrier at the interface of p-CuCrO 2 /n-Si. These results provide a potential utilization of resistive random access memory with self-rectifying behavior in p-type delafossite-based heterostructures. [ABSTRACT FROM AUTHOR]