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• A single crystal of SnSb 2 Te 4 is grown by using a simple self-flux method. • Crystalline growth and phase purity are evident from XRD, SEM, and EDAX measurements. • Two different Raman modes are observed in parent Sb 2 Te 3 due to changes in the middle atomic layer. • We are the first to report MR% behavior of SnSb 2 Te 4 +5T. • Presence of WAL effect in SnSb 2 Te 4. • DFT calculated bulk electroic band structure of SnSb 2 Te 4. Here, we report successful single crystal growth of SnSb 2 Te 4 using the self-flux method. Unidirectional crystal growth is confirmed through X-ray Diffraction (XRD) pattern taken on mechanically cleaved crystal flake while the rietveld refined Powder XRD (PXRD) pattern confirms the phase purity of the grown crystal. Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM) image and Energy Dispersive X-Ray analysis (EDAX) confirm crystalline morphology and exact stoichiometry of constituent elements. Vibrational Modes observed in Raman spectra also confirm the formation of the SnSb 2 Te 4 phase. DC resistivity (ρ-T) measurements confirm the metallic character of the grown crystal. Magneto-transport measurements up to±5T show a non-saturating low magneto-resistance percentage (MR%). V-type cusp and Hikami Larkin Nagaoka (HLN) fitting at lower field confirms the Weak Anti-localization (WAL) effect in SnSb 2 Te 4. Density Functional Theory (DFT) calculations were showing topological non-trivial electronic band structure. It is the first-ever report on MR study and WAL analysis of SnSb 2 Te 4 single crystal. [ABSTRACT FROM AUTHOR]