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The deep integration of information technology and process industry production systems makes system failure increasingly multi‐source and multi‐scale. In contrast to conventional hazard methods, system theoretic process analysis (STPA) can analyze the hazards in system control processes from the perspective of interactions among the system components. Theoretically, this method offers advantages that are better suited for modern production systems. However, as of now, the integration between STPA and process industrial production systems is still lacking. To address this issue, this study improved the original STPA method. First, we propose the "5 flows" concept for the process industrial cyber‐physical systems. The systems are described using multilevel flow modeling (MFM). This leads to the development of the MSTPA method, which is specifically designed to analyze the cyber‐physical hazards in process industrial production systems. Subsequently, the cyber‐physical hazards of a fluidized‐bed catalytic cracking unit are analyzed in detail using the MSTPA method as an example. The results show that MSTPA can identify cyber‐physical hazards in multiple dimensions. It is proved that, compared with the original STPA and traditional hazard methods, the MSTPA method can better identify cyber‐physical hazards in process industrial production systems. [ABSTRACT FROM AUTHOR]

As an important phase-change material, GeTe has many high-pressure phases as well, but its phase transitions under pressure are still lack of clarity. It is challenging to identify high-pressure GeTe crystal structures owing to the phase coexistence in a wide pressure range and the reversibility of phase transitions. Hence, first-principles calculations are required to provide further information in addition to limited experimental characterizations. In this work, a new orthorhombic Cmca GeTe high-pressure phase has been predicted via the CALYPSO method as the most energetically favorable phase in the pressure range between ∼30 and ∼38.5 GPa, which would update the GeTe high-pressure phase transition sequence. The crystal structure of the Cmca phase is composed of alternate stacking puckered layers of Ge six-membered rings and Te four-membered rings along the b direction. The high density of states near the Fermi level and delocalization of electrons from the two-dimensional electron localization function indicate a strong metallic property of the Cmca phase. Electron–phonon coupling calculations indicate that the Cmca phase is superconductive below ∼4.2 K at 35 GPa. The simulated x-ray diffraction pattern of the Cmca phase implies that this phase might coexist with the Pnma-boat phase under high pressure. These results offer further understanding on the high-pressure structural evolution and physical properties in GeTe and other IV–VI semiconductors. [ABSTRACT FROM AUTHOR]

The presence of interstitial electrons in electrides endows them with interesting attributes, such as low work function, high carrier concentration, and unique magnetic properties. Thorough knowledge and understanding of electrides are thus of both scientific and technological significance. Here, we employ first-principles calculations to investigate Mott-insulating Ae5X3 (Ae = Ca, Sr, and Ba; X = As and Sb) electrides with Mn5Si3-type structure, in which half-filled interstitial electrons serve as ions and are spin-polarized. The Mott-insulating property is induced by strong electron correlation between the nearest interstitial electrons, resulting in spin splitting and a separation between occupied and unoccupied states. The half-filled antiferromagnetic configuration and localization of the interstitial electrons are critical for the Mott-insulating properties of these materials. Compared with that in intermetallic electrides, the orbital hybridization between the half-filled interstitial electrons and the surrounding atoms is weak, leading to highly localized magnetic centers and pronounced correlation effects. Therefore, the Mott-insulating electrides Ae5X3 have very large indirect bandgaps (∼0.30 eV). In addition, high pressure is found to strengthen the strong correlation effects and enlarge the bandgap. The present results provide a deeper understanding of the formation mechanism of Mott-insulating electrides and provide guidance for the search for new strongly correlated electrides. [ABSTRACT FROM AUTHOR]

In this work, diamond crystals were synthesized with N–H–O impurities by the temperature gradient method (TGM) under high pressure and high temperature (HPHT) conditions using FeNi alloy as the metal solvent (MS). The results indicated that the spontaneous nucleation rate and proportion, growth characteristics, surface growth texture, and the impurity concentration of diamond crystals changed drastically upon changing the impurity content in the system. Mutual diffusion between the MS and carbon source (CS) was also blocked, which seriously inhibited the growth rate of diamond crystals. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses corroborated that the zero-valent iron (Fe0) and nickel (Ni0) contents declined after N–H–O impurities were introduced. The newly formed graphite can be found in the MS, but the ferric carbide disappears. XPS also confirmed shifts in the binding energy of FeNi MS peaks, more iron oxide and nickel oxide were identified in MS, hindering the mass transfer process. CO and NO were absorbed on the surface of MS, which hindered the surface processes of diamond growth. The formation of intermediates (Fe3C) was impeded during diamond growth and blocked the spontaneous nucleation of diamond. All of these phenomena contributed to a poor growth rate and changed the surface growth process of diamond crystals. [ABSTRACT FROM AUTHOR]