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Your search keyword '"Faculté De Technologie Blida1"' showing total 6 results
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6 results on '"Faculté De Technologie Blida1"'

1. Optimization of CdZnyS1−y Buffer Layer Properties for a ZnO/CZTSxSe1−x/Mo Solar Cell to Enhance Conversion Efficiency

Author

Boubakeur, M., Aissat, A., Chenini, L., Arbia, M. Ben, Maaref, H., Vilcot, Jean-Pierre, Faculté De Technologie Blida1, Université Saâd Dahlab Blida 1 (UB1), Université de Monastir - University of Monastir (UM), Laboratoire de Micro-optoélectronique et Nanostructures [Monastir], Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM)-Université de Monastir - University of Monastir (UM), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Optoélectronique - IEMN (OPTO - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and no information

Subjects
solar cell, [SPI]Engineering Sciences [physics], New materials, thin film, Materials Chemistry, semiconductors, Electrical and Electronic Engineering, Condensed Matter Physics, optoelectronic, Electronic, Optical and Magnetic Materials
Abstract

International audience

Published
2022
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2. Intersubband Optical Properties of Strained InAsSb/AlGaAs Quantum Well Structure

Author

Chenini, L., Aissat, A., Vilcot, Jean-Pierre, Faculté De Technologie Blida1, Université Saâd Dahlab Blida 1 (UB1), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Optoélectronique - IEMN (OPTO - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Detection, [SPI]Engineering Sciences [physics], Absorption coefficient, Semiconductor III–V, Nanostructures
Abstract

International audience; AbstractIn this paper, the intersubband optical properties of strained InAsSb/AlGaAs single quantum well structure have been investigated in a detailed way as depending on the structure parameters. For this aim, first, we have computed the energy eigenvalues and their corresponding wave functions of this structure by means of the solution of the Schrodinger equation in envelope function effective mass approximation. Second, we have calculated some important parameters as strain, band gap energy, effective mass and the conduction band (CB) offset ratio. Finally, the intersubband absorption coefficient properties have been determined as a function of the composition, well thickness and the emission wavelength.

Published
2023
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3. SiGe quantum wells implementation in Si based nanowires for solar cells applications

Author

Safi, M. (M.), Aissat, A. (A.), Guesmi, H. (H.), Vilcot, J-P. (Jean-Pierre), Faculté De Technologie Blida1, Université Saâd Dahlab Blida 1 (UB1), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Optoélectronique - IEMN (OPTO - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN], and Optoélectronique - IEMN [OPTO - IEMN]

Subjects
Nanowire, Quantum wells, Solar cells, Quantum efficiency, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.

Published
2023
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4. Improving the efficiency of a GaInP solar cell using an AlGaAs buffer layer by optimizing the thicknesses of the PN junction

Author

Djedoui, L., Aissat, A., Djemouai, A., Vilcot, Jean-Pierre, Laboratoire de Traitement de Signal et Imagerie [Blida] (LATSI), Université Saâd Dahlab Blida 1 (UB1), Faculté De Technologie Blida1, Université Mohamed El Bachir El Ibrahimi [Bordj Bou Arréridj], Optoélectronique - IEMN (OPTO - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and The authors would like to thank the Tempus Esience project team (Project n°:530341-TEMPUS-1-2012-1-FR-TEMPUS-JPCR from 2012 to 2015) for providing us with the virtual labof the University of Bordj Bou Arreridj (UBBA vlab) and allowed us using the TCAD-Silvaco software to model and characterize our solar cells.

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience

Published
2022
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5. Performance simulation of an InGaSb/GaSb based quantum well structure for laser diode applications

Author

Chenini, Lynda, Aissat, A., Halbwax, Mathieu, Vilcot, Jean-Pierre, Université Saâd Dahlab Blida 1 (UB1), Faculté De Technologie Blida1, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Optoélectronique - IEMN (OPTO - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and no information

Subjects
[PHYS]Physics [physics], Detection, [SPI]Engineering Sciences [physics], Optoelectronic, Lasers, General Physics and Astronomy, Semiconductor, Nanostructures
Abstract

International audience; AbstractThe present study reports the impact of structural parameters on optoelectronic properties of InGasb/GaSb based quantum well structures (Qws). The laser diodes are designed to operate at 2.3 μm at 300 K. Numerical calculations of the emission wavelength, optical and modal gain of TE mode in InGaSb/GaSb laser diode structure have been carried out for various well material compositions, well thickness, number of quantum wells and temperature. The optical confinement factor and threshold current density are also simulated and reported. The calculations were performed using the 8-bands k.p model. For an injected carrier concentration of 1.56 × 1018 cm−3 at 300 K, peak gain value of the order of 1400 cm−1 is reached and a modal gain of 94 cm−1 can be obtained. A threshold current density around 3 kA/cm2, is expected to be obtained through optical losses of about 50 cm−1. The results show that InGaSb/GaSb quantum wells are appropriate for mid-infrared lasers operating at 300 K.

Published
2023
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6. Development of the multi-quantum wells structures based on InxGa1-x As1-yNy/GaAs for solar cells applications

Author

Aissat, Abdelkader, Bestam, Rachid, Boubakeur, Manel, Vilcot, Jean-Pierre, Université Saâd Dahlab Blida 1 (UB1), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Faculté De Technologie Blida1, Optoélectronique - IEMN (OPTO - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Semiconductor III-V-N, [SPI]Engineering Sciences [physics], Optoelectronic, New materials, Solar cell, Nanostructures
Abstract

International audience; In order to improve the solar cell efficiency, quantum multi-wells have been implanted into the intrinsic region of the structure. We can absorb the photons that have a lower energy than the bandgap energy. In this work, physical and optical phenomena that influence the efficiency of the solar cell have been modeled, simulated and optimized. In addition, the effects of indium (x) and nitrogen (N) concentrations, the quantum wells number (nQWs) and the quantum well width (Lw) on structural stability, bandgap energy, external quantum efficiency and the solar cell output parameters were studied. For indium and nitrogen concentrations x = 35%, y = 3.5% respectively, a quantum well width LW = 8 nm and quantum wells number nQWs of 50, we have obtained a strain (ε) of about 1.77%. The obtained external quantum efficiency (EQE) in this case is about 86.23%, while the efficiency (η) is 33.60%. We can improve this work by using other materials.

Published
2022
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