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In this paper, we report a systematic study on effect of film thickness and substrate temperature on structural and magnetic behaviour of Fe-Ga films with Cu buffer layer, deposited on Si and Si/SiO2 substrates at room and high substrate temperatures. Grazing incidence X-ray diffraction studies reveal that all the films are crystalline with disordered alpha-Fe phase, which is BCC A2 phase. At 300 °C of substrate temperature, films deposited on Si/SiO2 substrate found to nucleate L12 phase from matrix of A2 phase, which is not seen in Si based films. Irrespective of substrate material, Fe-Ga films found to exist in dual phases at 500 °C substrate temperature. Lattice strains of the films were calculated from X-ray diffraction patterns, using Williamson-Hall method. From X- ray reflectivity analysis of all the films, film density, thickness and roughness of Fe-Ga layer and buffer layer were obtained after fitting the reflectivity data. Presence of an oxide layer is also evident from reflectivity fitting analysis. From magnetization studies it is clear that, all the films exhibited strong in-plane anisotropy. Saturation magnetization of films was found to vary with change in film density and oxide layer thickness of films. Saturation magnetization of films deposited on Si substrates found to decrease with decrease in film density. Coercivity of films found to vary with change in crystallite size, interface roughness and lattice strain of films. Films deposited on Si substrates are sensitive to strain with change in film thickness and films deposited on Si/SiO2 substrates are sensitive to strain with change in deposition temperature. Coercivity in films found to decrease with decrease in film roughness, increase in crystallite size and lowering the tensile lattice strain. [ABSTRACT FROM AUTHOR]

Diamond-like-carbon "DLC" coatings can be deposited in many different ways, giving a large range of material properties suitable for many different types of applications. Hydrogen content significantly influences the mechanical properties and the tribological behavior of DLC coatings, but its determination requires techniques that are not available in many research centers. Thus, it is important to find alternative indirect techniques, such as Raman spectroscopy or nanoindentation (hardness measurements), which can give comparative and indicative values of the H contents in the coatings, particularly when depositions with a reactive gas flow are being studied. In this work, "DLC" composite coatings with varying H content were deposited via Physical Vapor Deposition (PVD) magnetron sputtering in a reactive atmosphere (Ar + CH4). An Ion Beam Analysis was used to determine the elemental depth profile across the coating thickness (giving both average C:W:H ratios and film density when combined with profilometer measurements of film thickness). The hardness was evaluated with nanoindentation, and a decrease from 16 to 6 GPa (and a decrease in the film density by a factor of two) with an increasing CH4 flow was observed. Then, the hardness and Raman results were correlated with the H content in the coatings, showing that these indirect methods can be used to find if there are variations in the H content with the increase in the CH4 flow. Finally, the adhesion and tribological performance of the coatings were evaluated. No significant differences were found in the adhesion as a function of the H content. The tribological properties presented a slight improving trend with the increase in the H content with a decrease in the wear rate and friction. [ABSTRACT FROM AUTHOR]

HfxZr1−xO2 (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (Pr) and fatigue endurance of these films. To overcome these limitations, in this study, HZO thin films were fabricated via plasma-enhanced atomic layer deposition (PEALD), and the effects of the deposition and post-annealing temperatures on the density, crystallinity, and electrical properties of the thin films were analyzed. The thin films obtained via PEALD were characterized using cross-sectional transmission electron microscopy images and energy-dispersive spectroscopy analysis. An HZO thin film deposited at 180 °C exhibited the highest o-phase proportion as well as the highest density. By contrast, mixed secondary phases were observed in a thin film deposited at 280 °C. Furthermore, a post-annealing temperature of 600 °C yielded the highest thin film density, and the highest 2Pr value and fatigue endurance were obtained for the film deposited at 180 °C and post-annealed at 600 °C. In addition, we developed three different methods to further enhance the density of the films. Consequently, an enhanced maximum density and exceptional fatigue endurance of 2.5 × 107 cycles were obtained.

A family of first-generation dendrimers containing 3,5-bis(carbazolyl)phenyl dendrons attached to a green emissive fac -tris(2-phenylpyridyl)iridium(III) core were prepared. The solubility of the dendrimers was imparted by the attachment of tert -butyl surface groups to the carbazole moieties. The dendrimers differed in the number of dendrons attached to each ligand (one or two dendrons) as well as the degree of rotational restriction within the dendrons. The densities of the films containing the doubly dendronized materials were higher than those of their mono-dendronized counterparts, with the dendrimer containing two rotationally constrained dendrons per ligand having the highest density at 1.12 ± 0.04 g cm -3 . The dendrimers were found to have high photoluminescence quantum yields (PLQYs) in solution of between 80 and 90%, with the doubly dendronized materials having the lower values and a red-shifted emission. The neat film PLQY values of the dendrimers were less than those measured in solution although the relative decrease was smaller for the doubly dendronized materials. The dendrimers were incorporated into solution-processed bilayer organic light-emitting diodes (OLEDs) composed of neat or blend emissive layers and an electron transport layer. The best-performing devices had the dendrimers blended with a host material and external quantum efficiencies as high as 14.0%, which is higher than previously reported results for carbazole-incorporating emissive dendrimers. A feature of the devices containing blends of the doubly dendronized materials was that the maximum efficiency was relatively insensitive to the concentration in the host between 1 and 7 mol %.

HfxZr1−xO2 (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (Pr) and fatigue endurance of these films. To overcome these limitations, in this study, HZO thin films were fabricated via plasma-enhanced atomic layer deposition (PEALD), and the effects of the deposition and post-annealing temperatures on the density, crystallinity, and electrical properties of the thin films were analyzed. The thin films obtained via PEALD were characterized using cross-sectional transmission electron microscopy images and energy-dispersive spectroscopy analysis. An HZO thin film deposited at 180 °C exhibited the highest o-phase proportion as well as the highest density. By contrast, mixed secondary phases were observed in a thin film deposited at 280 °C. Furthermore, a post-annealing temperature of 600 °C yielded the highest thin film density, and the highest 2Pr value and fatigue endurance were obtained for the film deposited at 180 °C and post-annealed at 600 °C. In addition, we developed three different methods to further enhance the density of the films. Consequently, an enhanced maximum density and exceptional fatigue endurance of 2.5 × 107 cycles were obtained. [ABSTRACT FROM AUTHOR]