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Your search keyword '"Hedong Chen"' showing total 11 results
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11 results on '"Hedong Chen"'

1. An InGaN/SiNx/Si Uniband Diode Photodetector

Author

Jiaxun Song, Xingyu Wang, Jinyou Xu, Yongjie Chen, Hedong Chen, Yingzhi Zhao, Guofu Zhou, and Richard Nötzel

Subjects
Fowler−Nordheim tunneling, InGaN, photodetectors, silicon nitride, sub-Poissonian shot noise, uniband diodes, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract

A novel self‐powered InGaN/SiNx/Si uniband diode photodetector (PD) is introduced. The full band structure is first constructed from the transition of direct tunneling to Fowler‐Nordheim tunneling of holes through the ultrathin SiNx interlayer at forward bias in the dark. Basis is the alignment of the n‐InGaN conduction band with the p‐Si valence band at zero bias. Under illumination, the photocurrent, responsivity, and bandwidth for the self‐powered PD at zero bias indicate two distinct operation modes (i) for longer and (ii) for shorter wavelengths of incident light. The two modes involve (i) absorption in Si and electron tunneling through the SiNx interlayer and (ii) absorption in InGaN and hole transport across the SiNx interlayer. The noise is considerably larger in operation mode (i) than in operation mode (ii). This is attributed to the presence or absence of energy barriers for electron and hole transport in PD operation. Hence, noise is introduced as an independent parameter to discriminate between longer and shorter wavelength regions in dual‐wavelength photodetection.

Published
2022
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2. Ruthenium-Alloyed Iron Phosphide Single Crystal with Increased Fermi Level for Efficient Hydrogen Evolution

Author

Yu Kang, Yujia Han, Hedong Chen, Horst Borrmann, Peter Adler, Darius Pohl, Martin Hantusch, Markus König, Yangkun He, Yufei Ma, Xiaodong Wang, and Claudia Felser

Subjects
General Materials Science
Abstract

Transition metal phosphide alloying is an effective approach for optimizing the electronic structure and improving the intrinsic performance of the hydrogen evolution reaction (HER). However, obtaining 3d transition metal phosphides alloyed with noble metals is still a challenge owing to their difference in electronegativity, and the influence of their electronic structure modulated by noble metals on the HER reaction also remains unclear. In this study, we successfully incorporated Ru into an Fe

Published
2022

4. Vertical 2-dimensional heterostructure SnS-SnS2 with built-in electric field on rGO to accelerate charge transfer and improve the shuttle effect of polysulfides

Author

Kangshou Lin, Xiang Liu, Xiaofeng Huang, Xianhua Hou, Yu Zhao, Zhoulu Wang, Hedong Chen, and Jinzhu Zhao

Subjects
Materials science, business.industry, chemistry.chemical_element, Heterojunction, Electrochemistry, Cathode, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Biomaterials, Metal, Colloid and Surface Chemistry, chemistry, law, Electric field, visual_art, Electrode, visual_art.visual_art_medium, Optoelectronics, business, Carbon, Electrical conductor
Abstract

Traditional carbon materials as sulfur hosts of Li-sulfur(Li-S) cathodes have slightly physical constraint for polysulfides, due to their no-polar property. Therefore, it is necessary to further enhance the affinity between sulfur hosts and polysulfides, and relieve the shuttle effects in the Li- S batteries. Herein, we report a novel vertical 2-dimensional (2D) p-SnS/n-SnS2 heterostructure sheets which grown on the surface of rGO. The excellent electrochemical properties of SnS-SnS2@rGO as Li-S cathode are ascribed to the stronger absorption effect of metal sulphides for polysulfides and the smooth trapping-diffusion-conversion effect of p-SnS/n-SnS2 heterostructure for polysulfides. As a conductive carrier for the growth of vertical 2D p-SnS/n-SnS2 heterostructure nanosheets, rGO can protect the steadiness and enhance the cycle stability of electrode, compared with heterostructure without rGO. In addition, the built-in electric field in the 2D p-SnS/n-SnS2 heterostructure during the discharge/charge processes can effectively accelerate charge transfer, and the charge transfer mechanism in SnS-SnS2 heterostructure during cycling has been investigated. At a rate capability of 2C, the designed SnS-SnS2@rGO as Li-S cathode delivers high specific capacities of 907 mAh g−1 and 571 mAh g−1 after the first cycle and 500 cycles, respectively, which shown excellent cycling ability.

Published
2022

8. Identification of Interface Structure for a Topological CoS

Author

Yu, Kang, Yangkun, He, Darius, Pohl, Bernd, Rellinghaus, Dong, Chen, Marcus, Schmidt, Vicky, Süß, Qingge, Mu, Fan, Li, Qun, Yang, Hedong, Chen, Yufei, Ma, Gudrun, Auffermann, Guowei, Li, and Claudia, Felser

Abstract

Transition metal chalcogenides such as CoS

Published
2022

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