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Background: Primary bladder lymphoma is generally regarded as having a favorable prognosis due to the predominance of low-grade lymphomas confined to the bladder. However, our investigation reveals that cases with extravesical extension, predominantly involving diffuse large B-cell lymphoma (DLBCL), exhibit a distinct clinical course with varied prognostic outcomes. Methods: In this report, we present and analyzed the clinical features and outcomes of 47 patients with primary bladder lymphoma with extravesical extension, including the case that we experienced. Results: An 77-year-old man who experienced fever, anorexia, and general malaise was referred to our hospital. Initial laboratory tests indicated severe renal failure, pyuria, and Escherichia coli bacteremia, accompanied by diffuse thickening of the bladder walls and increased attenuation in the surrounding adipose tissues. Initially misdiagnosed with a severe urinary tract infection leading to sepsis, the patient was treated with antibiotics and hemodialysis. Upon readmission due to abdominal pressure, imaging identified an intra-abdominal mass connected to the bladder wall. A bladder biopsy was performed, resulting in the diagnosis of primary bladder DLBCL with perivesical extension, classified as germinal center B-cell type. Taking inspiration from this case, the review of 46 patients was implemented. As a result, we resolved that primary bladder lymphoma often includes indolent types like Mucosa-associated lymphoid tissue lymphoma, but cases with extravesical expansion are predominantly DLBCL. Conclusions: This case emphasizes the diagnostic complexities of distinguishing primary bladder lymphoma from urinary tract infections and underscores the prognostic implications of extravesical extension. Our comprehensive review of the literature on primary bladder lymphomas with extravesical involvement highlights the clinical characteristics, therapeutic challenges, and need for heightened diagnostic vigilance and tailored treatment strategies for this subset of patients. [ABSTRACT FROM AUTHOR]

Herein, a simulation study on novel GaN‐based n−p−n heterojunction bipolar transistors (HBTs) with a quaternary n‐AlGaInN emitter and a thin GaInN quantum well (QW) layer inserted in its p‐GaN base is reported. The idea of the quaternary AlGaInN emitter facilitates the design and independent growth of the energy bandgaps and lattice strain. In addition, the p‐GaN base inserted with the thin GaInN QW is expected to be effective in enhancing its lateral conduction via 2D hole gases (2DHGs). The simulation results indicate that the designed GaInN QW definitely functions to generate and transport the 2DHGs and ultimately contributes to the improvement of the device performance. In other words, the lateral resistivity of the p‐GaN base is reduced from 1.8 × 10−1 to 7.0 × 10−2 Ω cm with the use of the GaInN QW insertion layer. Further, the simulation study focusing on the lateral distance between the n‐emitter and p‐base electrodes exhibits stable device characteristics for the HBT with the GaInN QW insertion layer compared with the conventional HBT structure. Dynamic analysis of the carrier concentration distribution indicates that the QW functions as a low‐resistance current path and it has the effect of avoiding the punch‐through phenomenon. [ABSTRACT FROM AUTHOR]