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2. Enhancement of the creation yield of NV ensembles in a chemically vapour deposited diamond

Author

Priyadharshini Balasubramanian, Christian Osterkamp, Ovidiu Brinza, Maxime Rollo, Isabelle Robert-Philip, Philippe Goldner, Vincent Jacques, Fedor Jelezko, Jocelyn Achard, Alexandre Tallaire, Universität Ulm - Ulm University [Ulm, Allemagne], Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Institut Galilée-Université Sorbonne Paris Cité (USPC)-Centre National de la Recherche Scientifique (CNRS)-Université Sorbonne Paris Nord, Laboratoire Charles Coulomb (L2C), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Institut de Recherche de Chimie Paris (IRCP), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Ministère de la Culture (MC), ANR-18-IDEX-0001,Université de Paris,Université de Paris(2018), ANR-19-CE29-0017,Diamond-NMR,Amélioration de la sensibilité RMN avec des centres NV (azote-lacune) de diamants(2019), ANR-18-QUAN-0008,MICROSENS,Quantum sensing en régime micro-onde avec des centres colorés du diamant(2018), ANR-10-LABX-0096,SEAM,Science and Engineering for Advanced Materials and devices(2010), and European Project: 820394,ASTERIQs

Subjects
Single crystal diamond, NV yield, Quantum technologies, General Materials Science, CVD growth, General Chemistry, Colour centres in diamond, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Abstract

International audience; In this work we investigate the properties of negatively charged nitrogen-vacancy (NV À) centres created during single crystal diamond growth by chemical vapour deposition (CVD) on [113]-oriented substrates and with N 2 O as a dopant gas. The use of spin echo and double electron-electron resonance (DEER) allows us to assess NV À ratio with respect to substitutional nitrogen impurities (N 0 s) incorporated during growth, a critical figure of merit for quantum technologies. We demonstrate that, at moderate growth temperatures (800 C), dense NV À ensembles of several hundreds of ppb (800 ppb for 50 ppm of added N 2 O) and with exceptionally high NV À / N 0 s ratios of up to 25% can be achieved. This NV À creation yield is higher by at least an order of magnitude to that typically obtained on standard [100]-grown diamonds and comparable to the best values reported for electron-irradiated diamonds. The material obtained here thus advantageously combines a high NV À density, high creation yield, long coherence times of several tens of ms together with a partial preferential orientation. These are highly desirable requirements for diamond-based quantum sensors that may spur new developments with this crystalline orientation leading to improved performance and sensitivity.

Published
2022
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