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The molecular beam epitaxy (MBE) technique is renowned as the most suitable for the growth of high-quality crystalline materials and nanostructures such as GaAs. However, once established, optimal growth parameters required for repeatability of top-quality structures may be easily lost as MBE is highly sensitive to any changes in the system. Especially, routine servicing procedures, which include any activity which requires unsealing of the growth chamber, are devastating for developed growth parameters and force the necessity of recalibration. In this work, we present the process of growth parameter pre-optimization for obtaining homoepitaxial GaAs layers after servicing and restarting the MBE system. Namely, we present how each step of reestablishing optimal growth condition influences various characteristics of obtained GaAs layers. Those include in situ, structural, and spectral measurement techniques. An additional aspect was to compare the optimal conditions for the growth of homoepitaxial GaAs layers from two growth campaigns in which the main difference is the addition of an ion pump and increasing the temperature gradient on the Ga cell., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved material crystalline quality, and improved surface quality. The minimal strain T2SL versus GaSb substrate can be achieved by a special shutters sequence during MBE growth that leads to the formation of both interfaces. The obtained minimal mismatches of the lattice constants is smaller than that reported in the literature. The in-plane compressive strain of 60-period InAs/AlSb T2SL 7ML/6ML and 6ML/5ML was completely balanced by the applied IFs, which is confirmed by the HRXRD measurements. The results of the Raman spectroscopy (measured along the direction of growth) and surface analyses (AFM and Nomarski microscopy) of the investigated structures are also presented. Such InAs/AlSb T2SL can be used as material for a detector in the MIR range and, e.g., as a bottom n-contact layer as a relaxation region for a tuned interband cascade infrared photodetector.

The article presents a systematic study of Sb-doped Zn 1-x Mg x O layers, with various concentrations of Mg, that were successfully grown by plasma-assisted MBE on polar a - and c -oriented and non-polar r -oriented sapphire substrates. X-ray diffraction confirmed the polar c -orientation of alloys grown on c -and a -oriented sapphire and non-polar structures grown on r -oriented substrates. A uniform depth distribution of the Sb dopant at level of 2 × 10 20 cm -3 was determined by SIMS measurements. Raman spectroscopy revealed the presence of Sb-related modes in all samples. It also showed that Mg alloying reduces the compressive strain associated with Sb doping in ZnO. XPS analysis indicates that the chemical state of Sb atoms in ZnMgO is 3+, suggesting a substitutional position of Sb Zn , probably associated with two V Zn vacancies. Luminescence and transmission spectra were measured to determine the band gaps of the Zn 1-x Mg x O layers. The band gap energies extracted from the transmittance measurements differ slightly for the a , c , and r substrate orientations, and the differences increase with increasing Mg content, despite identical growth conditions. The differences between the energy gaps, determined from transmission and PL peaks, are closely correlated with the Stokes shift and increase with the Mg content in the analyzed series of ZnMgO layers.

Background: Cerebral blood flow (CBF) can be related to the risk of occurrence of neurological symptoms. Well-developed collateral circulation is a good prognostic factor in patients with cerebrovascular disease. Understanding the mechanisms of collateral circulation may be important in the diagnosis, treatment, and monitoring in this group of patients. The aim of this study covered the assessment of CBF in patients with 70−99% Internal carotid artery (ICA) stenosis, focusing on the circulation pathways and flow volume in extracranial arteries. Materials and methods: 53 patients with 70−99% ICA stenosis (mean age 73.4 ± 7 years old; 17 female, mean age 73.9 ± 7.5 years old; 36 male, mean age 73.2 ± 6.8 years old) were included in the study. In all patients a Doppler ultrasound (DUS) examination, measuring blood flow volume in the internal carotid artery (ICA), external carotid artery (ECA), and vertebral artery (VA), was performed. The cerebral blood flow (CBF) was compared to the previously reported CBF values in the healthy population > 65 years old. Results: Among the study groups three subgroups with flow differences were identified: patients with elevated CBF (significant volumetric flow compensation—26/53, 49%), patients with CBF similar to (mild compensation—17/53, 32%), and patients with CBF lower than (no compensation—10/53, 19%) the healthy, equally aged population. The percentage of patients with significant volumetric flow compensation was the highest in age groups 65−69 years old (62.5%) and >80 years old (60%). In the oldest age group (>80 years old) no patients without flow compensation (0%) were observed. The level of compensation depends on the number of the arteries with compensatory increased flow. In patients with significant volumetric flow compensation, the compensatory increased flow was observed, on average, in 3.31 arteries, in the mild compensation group—in 2.18 arteries, and in the no compensation group only in 1 artery. ICA plays the most important role in the volumetric flow compensation—the increase in the flow volume, in comparison to the reference values, was between 116.7 mL/min and 251.9 mL/min (in the ECA 57.6 mL/min−110.4 mL/min; in the VA 73.9 mL/min−104.9 mL/min). The relative flow increase was highest in the VA: 215−246%, then in the ECA: 163−206%, and finally in the ICA: 148.6−192%. The increased flow was most commonly observed in the VA—57 arteries, in second place in the ECA—42 arteries, and ICA—31 arteries. In patients with unilateral ICA stenosis, the volumetric flow increase was stated more frequently in the ipsilateral ECAs then in the contralateral ones (23 vs. 14). In the VA the opposite tendency was observed (29 contralateral vs. 23 ipsilateral). The ability of volumetric flow compensation decreased significantly with increasing age. Conclusions: Understanding the mechanisms of collateral circulation and their assessment in Doppler ultrasonography may provide a novel and easily accessible tool of identifying and monitoring patients with cerebrovascular disease., Competing Interests: The authors declare no conflict of interest.