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The rapid development of kilowatt-level lasers is in urgent need of excellent magneto-optical materials for Faraday isolators. In this work, a new component Tb3Al2Ga3O12 crystal was designed to meet applications in high-power lasers. A high-quality single crystal has been successfully obtained by the Czochralski technique. The Tb3Al2Ga3O12 crystal is verified to have high crystallinity with a small full width at half maximum (FWHM) of 43.2′′ and exhibits excellent uniformity, especially enhanced magneto-optical properties, exceeding ∼7–15% that of the traditional TGG crystal. These excellent attributes suggest that the Tb3Al2Ga3O12 crystal can be a promising candidate for Faraday isolators. [ABSTRACT FROM AUTHOR]

The persistent photocurrent (PPC) and high carrier concentration are challenging the ultraviolet photodetection behaviors of amorphous InGaO films. Herein, InGaO/PbI2 heterojunction is constructed by an all‐solution synthesis process to set up a built‐in electric field at the heterojunction interface, which is aimed at the inhibition of PPC, suppression of dark current, and promotion of photogenerated carrier separation. With an optimized In content of 90%, the as‐fabricated InGaO/PbI2 heterojunction photodetector exhibits excellent self‐powered near‐ultraviolet photodetection behaviors with high Ilight/Idark ratio of 104, ultralow dark current of 10−13 A and fast response times of 0.8/0.6 ms. Additionally, benefiting to the all‐solution synthesis process and amorphous characteristic, InGaO/PbI2 heterojunction can be implanted onto any useful substrates to achieve the specific function of photodetection. The as‐fabricated InGaO/PbI2 heterojunction flexible self‐powered photodetector exhibits outstanding mechanical flexibility, bending endurance, and photoelectric stability. When the InGaO/PbI2 heterojunction is implanted onto the transparent substrate, it demonstrates excellent omnidirectional self‐powdered photodetection performance and imaging capability. All results promise all‐solution‐processed InGaO for next‐generation advanced optoelectronics. [ABSTRACT FROM AUTHOR]

The β-Ga2O3 crystal is a significant ultrawide bandgap semiconductor with great potential in ultraviolet optoelectronics and high-power devices. Planar defects in β-Ga2O3 have been observed in experiments, but their structures, influences, formation mechanism, and controlling methods remain to be studied. We conducted a comprehensive study of β-Ga2O3 planar defects using density functional theory. We determined the atomic structures of planar defects (stacking faults and twins) on (100), (001), and (−201) planes in β-Ga2O3 crystals and calculated the formation energy and band structure of each defect. Our results indicate that the formation energy of stacking faults on the (100) plane and twins on the (100) and (−201) planes was extremely low, which explained why these planar defects were observed readily. We also studied the influence of common impurities (Si, Sn, Al, H) and vacancies in β-Ga2O3 crystals on the formation of these planar defects. Our findings revealed that specific impurities and vacancies could facilitate the formation of planar defects or even make them spontaneous. This research provides critical insights into the atomic structures of planar defects in β-Ga2O3, and explains why they form readily from the perspective of formation energy. These insights are important for future research into β-Ga2O3 defects. [ABSTRACT FROM AUTHOR]

This study introduces focused ion beam (FIB) processing for the first time to etch and thin β‐Ga2O3 microflakes, while exploring the effect of their thicknesses on the phototransistor performance. It is found that when the β‐Ga2O3 microflakes reach a certain thickness, the phototransistors switch from the depletion mode to the enhancement mode, exhibiting extremely low dark current without a gate voltage. The enhancement‐mode phototransistor prepared using this method demonstrates a photo‐dark current ratio as high as 2.3 × 105, a responsivity of 6.3 × 104 A W−1, and an external quantum efficiency of 3.1 × 107% when irradiated with incident light at a wavelength of 254 nm and a power density of 8 µW cm−2. Additionally, the device has a rise time of 43 ms and a fall time of 28 ms, respectively. By using FIB processing to etch and thin β‐Ga2O3 microflakes, this study effectively overcomes the poor controllability and low repeatability associated with the traditional mechanical exfoliation method, as well as the residual impurities from the plasma etching method. This opens up a new avenue for fabricating the high‐performance, low‐dimensional phototransistors based on β‐Ga2O3 with high repeatability and controllability. [ABSTRACT FROM AUTHOR]

High-performance magneto-optical materials are in urgent demand for high-power Faraday isolators. The traditional Tb3Ga5O12 crystal presents a relatively low Verdet constant and large absorption coefficient, which makes it difficult to meet the continuous development of high-power lasers. In this work, novel Tb3(AlxGa1)5O12 (TAGG) single crystals are grown by the Czochralski method. High-quality TAGG crystals with Al-substitution of up to 75% are obtained for the first time. The optical, thermal, and magneto-optical properties are significantly enhanced through high Al incorporation. This work demonstrates that the highly Al-substituted TAGG single crystals are remarkable magneto-optical materials for Faraday isolators. [ABSTRACT FROM AUTHOR]

The sesquioxide Lu2O3 possesses superior physical and chemical properties and emerges as a promising host material for high-power laser applications. However, Lu2O3 has an extremely high melting point, making it difficult to prepare large-size and high-quality crystals. In this paper, we report the growth of a Yb:Lu2O3 crystal with dimensions of Φ50.7 × 43.0 mm3 using the temperature gradient technique (TGT) combined with the directional solidification technique. The full width at half maximum (FWHM) of the high-resolution X-ray rocking curve of the crystal was determined to be 58.76 arcsec. Additionally, the optical homogeneity root mean square (RMS) was 10−5. The thermal properties, spectroscopic characterization, and continuous wave (CW) laser operation of Yb:Lu2O3 crystal were systematically studied. The results demonstrate the efficacy of the TGT as a novel approach for growing large-sized Lu2O3 crystals of exceptional quality. [ABSTRACT FROM AUTHOR]