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Transition metal oxides are considered to be highly promising anode materials for high-energy lithium-ion batteries. While carbon matrices have demonstrated effectiveness in enhancing the electrical conductivity and accommodating the volume expansion of transition metal oxide-based anode materials in lithium-ion batteries (LIBs), achieving an optimized utilization ratio remains a challenging obstacle. In this investigation, we have devised a straightforward synthesis approach to fabricate CuO nano powder integrated with carbon matrix. We found that with the use of a sodium carboxymethyl cellulose (CMC) based binder and fluoroethylene carbonate additives, this anode exhibits enhanced performance compared to acrylonitrile multi-copolymer binder (LA133) based electrodes. CuO@CMC electrodes reveal a notable capacity ~1100 mA h g−1 at 100 mA g−1 following 170 cycles, and exhibit prolonged cycling stability, with a capacity of 450 mA h g−1 at current density 300 mA g−1 over 500 cycles. Furthermore, they demonstrated outstanding rate performance and reduced charge transfer resistance. This study offers a viable approach for fabricating electrode materials for next-generation, high energy storage devices. [ABSTRACT FROM AUTHOR]

Lithium–sulfur batteries (LiSBs) offer high energy density, cost-effectiveness, and eco-friendliness, making them promising for future energy storage. This study explores using BiFeO3 (BFO) nanoparticles (NPs) to tackle challenges such as lithium polysulfides (LiPs) and shuttle issues in LiSBs. It employs a solid-state melt diffusion technique, encapsulates sulfur in single-walled carbon nanotubes (SCNTs), and utilizes BFO for effective polysulfide control. Herein, composite cathodes of sulfur (S)/SCNTs (abbr. SCNT) were fabricated, and cells were designed using a BFO-coated separator (SCNT-BFS). In addition, a cathode modification was performed with composite S/SCNTs/BFO (SCNT-BF), and a comparative analysis was conducted to assess the effectiveness of the BFO in the separator and the cathode. Cyclic voltammetry measurements revealed that the increased current peak intensity at lower reduction potential in SCNT-BF and SCNT-BFS indicated control of higher-order LiPs (Li2Sx, where 4 ≤ x ≤ 8), resulting in the generation of more stable lower-order products (Li2S2/Li2S). The charge/discharge analysis revealed controlled LiPs, resulting in high-capacity retention in SCNT-BF (∼75%) and SCNT-BFS (∼88%) over 200 cycles, which yielded capacities of 526 and 700 mAh/g at C/8 (1C = 1675 mA/g). These promising results suggest that incorporating BFO into the cathode and separator can advance the commercialization of durable LiSBs. [ABSTRACT FROM AUTHOR]

Large area single and bilayer graphene are grown on Pt/Ti/SiO2 substrates by hot filament chemical vapor deposition (HFCVD) with and without the assistance of Cu foil. The quality and number of graphene layers deposited on the substrate are assessed by Raman Spectroscopy. Atomic Force Microscopy (AFM) is used for assessing the surface topography of the graphene films grown on the Pt/Ti/SiO2 substrates. The microstructure and elemental analyses are performed by Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS). The results show that bilayer graphene growth is facilitated by a copper foil placed nearby Pt/Ti/SiO2 substrate and by a high filament temperature in the HFCVD reactor. Monolayer graphene grows only when no copper foil is placed near the Pt/Ti/SiO2 substrate at a low filament temperature. The approach paves a novel pathway towards the layer‐controlled growth of graphene on Pt/Ti/SiO2 substrates by HFCVD for frontier applications. [ABSTRACT FROM AUTHOR]

2D tin chalcogenides are promising materials for thin-film solar cells due to their excellent characteristics. SnS1−xSex alloy films have garnered attention from researchers over the last few decades due to their tunable physical features. Here, we report the successful preparation of SnS1−xSex powder using a temperature-assisted mechanochemical process and their subsequent deposition on glass substrates via thermal evaporation. X-ray diffraction (XRD) and Raman spectroscopy were used to extensively analyse SnS1−xSex thin films, elucidating their structural characteristics. The presence of a ternary alloy has been verified by both energy dispersive X-ray spectroscopy (EDAX) and X-ray photoelectron spectroscopy (XPS). The absorption spectrum shows that TSSe thin films have great potential for absorbing a wide range of visible light. Hall measurement revealed that n-type TSSe thin films have shown great promise with the highest hall mobility of up to 16.7 cm2 V−1 s−1. Our study demonstrates that TSSe has excellent potential as a 2D material for cutting-edge photovoltaic applications. [ABSTRACT FROM AUTHOR]

Multiferroic materials capable of robust magnetoelectric coupling at room temperature are currently being explored for their possible multifunctional device applications. Highly (100)-oriented Pb(Fe0.5Ta0.5)x(Zr0.53Ti0.47)1−x (PZTFTx) thin films (x = 0.2 and 0.3) with a thickness of about 300 nm were grown on La0.67Sr0.33CoO3 (LSCO)-buffered MgO 100-oriented substrates via the pulsed laser deposition method. An analysis of their X-ray diffraction patterns suggests the stabilization of the orthorhombic phase in the thin films at room temperature. Dielectric spectroscopic measurements of the metal–insulator–metal (Pt/PZTFTx/LSCO) thin-film capacitors as a function of temperature revealed a diffuse ferroelectric-to-paraelectric phase transition around Tm ~520 and 560 K for the x = 0.2 and 0.3 thin films, respectively. Well-saturated electrical hysteresis loops with large remanent (Pr) and saturation (Ps) polarizations were observed in these capacitors, which indicates the establishment of intrinsic ferroelectric ordering in the thin films at room temperature. These thin films retained ferromagnetic/ferrimagnetic ordering up to 300 K and showed saturation magnetization values of 8.3 (x = 0.2) and 6.1 (x = 0.3) emu/cm3 at room temperature. The magnetoelectric coupling constants of 2040 mV/cmOe (x = 0.2) and 850 mV/cmOe (x = 0.3), respectively, were obtained at an in-plane bias field at room temperature. The present study demonstrates that PZTFTx thin films are multiferroic at room temperature with large magnetoelectric couplings, and these materials may be suitable for use in magnetic sensors and spintronic device applications. [ABSTRACT FROM AUTHOR]

Alloy engineering are efficient methods to improve the physical properties of two‐dimensional (2D) material‐based photovoltaic application. Tin chalcogenide belonging to layered structured semiconducting family has been a significant compound due to its outstanding characteristics. Tin selenide (SnSe) is known as promising layered compound to develop 2D materials for optoelectronic devices. The current study focused onto the effect of tin sulfoselenide (SnSSe) alloy engineering on the structural, morphological, optical, and electrical characteristics. X‐ray Diffraction (XRD) confirmed that SnSSe and SnSe are exist in the orthorhombic crystal structure phase without other secondary phases, with the preferred high‐intensity peak along (111) oriented plane. Raman spectra was reported to give information about the vibrational characteristics of the compounds. The presence of Sulfur ion in SnSSe was further confirmed by Energy Dispersive X‐ray Spectroscopy (EDAX) and X‐ray Photoelectron Spectroscopy (XPS) analysis. Bandgap energy (Eg) has been analysed by Tauc's plot and the derivative of transmittance spectra. According to both sets of analyses, the bandgap of the SnSSe thin film is considerably smaller than that of the SnSe thin film. Hall measurements indicated that SnSSe exhibits the higher hole mobility. The present work's results offer useful insight into the prospective device applications of two‐dimensional alloy materials. [ABSTRACT FROM AUTHOR]