12 results on '"Kumar, Annie"'
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2. (Invited) Integration of InP Heterojunction Bipolar Transistors on Silicon Substrates for 6G Networks
3. Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors
4. First Demonstration of BEOL-Compatible 3D Fin-Gate Oxide Semiconductor Fe-FETs
5. Optical gain spectrum and confinement factor of a monolayer semiconductor in an ultrahigh quality cavity
6. Beol-Compatible Ingazno-Based Devices for 3D Integrated Circuits
7. Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory
8. Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V)
9. First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit
10. Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure
11. Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs
12. (Invited) Integration of InP Heterojunction Bipolar Transistors on Silicon Substrates for 6G Networks
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