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5. Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate

8. The performance analysis of the low‐speed direct‐drive generators for harvesting current energy.

9. Review of Silicon Carbide Processing for Power MOSFET

12. 1100 V, 22.9 mΩcm 2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation.

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