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This study introduces a novel fluxgate current sensor with a compact, ring-shaped configuration that exhibits improved performance through the integration of magnetization residence times and neural networks. The sensor distinguishes itself with a unique magnetization profile, denoted as M waves, which emerge from the interaction between the target signal and ambient magnetic interference, effectively enhancing interference suppression. These M waves highlight the non-linear coupling between the magnetic field and magnetization residence times. Detection of these residence times is accomplished using full-wave rectification circuits and a Schmitt trigger, with a digital output provided by timing sequence detection. A dual-layer feedforward neural network deciphers the target signal, exploiting this non-linear relationship. The sensor achieves a linearity error of 0.054 % within a measurement range of 15 A. When juxtaposed with conventional sensors utilizing the residence-time difference strategy, our sensor reduces linearity error by more than 40-fold and extends the effective measurement range by 150 % . Furthermore, it demonstrates a significant decrease in ambient magnetic interference. [ABSTRACT FROM AUTHOR]

This study introduces a novel fluxgate current sensor with a compact, ring-shaped configuration that exhibits improved performance through the integration of magnetization residence times and neural networks. The sensor distinguishes itself with a unique magnetization profile, denoted as M waves, which emerge from the interaction between the target signal and ambient magnetic interference, effectively enhancing interference suppression. These M waves highlight the non-linear coupling between the magnetic field and magnetization residence times. Detection of these residence times is accomplished using full-wave rectification circuits and a Schmitt trigger, with a digital output provided by timing sequence detection. A dual-layer feedforward neural network deciphers the target signal, exploiting this non-linear relationship. The sensor achieves a linearity error of 0.054% within a measurement range of 15 A. When juxtaposed with conventional sensors utilizing the residence-time difference strategy, our sensor reduces linearity error by more than 40-fold and extends the effective measurement range by 150%. Furthermore, it demonstrates a significant decrease in ambient magnetic interference.

Background. The aim of the study is to develop a semiconductor sensing element for a pressure sensor based on a strain-resistive effect in the form of a profiled membrane with increased sensitivity and reduced linearity error of the output signal. Materials and methods. The simulation of a sensor element in the form of a profiled membrane in the COMSOL Multiphisics software package was carried out to determine the geometric parameters of the silicon membrane cross-section, providing an optimal ratio of sensitivity and linearity error of the output signal. Results. A simulation model of a semiconductor pressure sensor sensor element has been created, which allows to increase the sensitivity and reduce the linearity error of the output signal. Conclusions. Thus, on the basis of the conducted modeling, the optimal geometric parameters of the cross-section of the profiled membrane of a semiconductor pressure strain converter of the membrane type were determined.